J. Semicond. > 2012, Volume 33 > Issue 12 > 125011

SEMICONDUCTOR INTEGRATED CIRCUITS

A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

Yang Geliang, Wang Zhigong, Li Zhiqun, Li Qin, Li Zhu and Liu Faen

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DOI: 10.1088/1674-4926/33/12/125011

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Abstract: A CMOS low-noise amplifier (LNA) operating at 31.7 GHz with a low input return loss (S11) and high linearity is proposed. The wideband input matching was achieved by employing a simple LC compounded network to generate more than one S11 dip below -10 dB level. The principle of the matching circuit is analyzed and the critical factors with significant effect on the input impedance (Zin) are determined. The relationship between the input impedance and the load configuration is explored in depth, which is seldom concentrated upon previously. In addition, the noise of the input stage is modeled using a cascading matrix instead of conventional noise theory. In this way Zin and the noise figure can be calculated using one uniform formula. The linearity analysis is also performed in this paper. Finally, an LNA was designed for demonstration purposes. The measurement results show that the proposed LNA achieves a maximum power gain of 9.7 dB and an input return loss of < -10 dB from 29 GHz to an elevated frequency limited by the measuring range. The measured input-referred compression point and the third order inter-modulation point are -7.8 and 5.8 dBm, respectively. The LNA is fabricated in a 90-nm RF CMOS process and occupies an area of 755 × 670 μm2 including pads. The whole circuit dissipates a DC power of 24 mW from one 1.3-V supply.

Key words: CMOS

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    Received: 21 August 2015 Revised: 18 June 2012 Online: Published: 01 December 2012

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      Yang Geliang, Wang Zhigong, Li Zhiqun, Li Qin, Li Zhu, Liu Faen. A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique[J]. Journal of Semiconductors, 2012, 33(12): 125011. doi: 10.1088/1674-4926/33/12/125011 ****Yang G L, Wang Z G, Li Z Q, Li Q, Li Z, Liu F E. A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique[J]. J. Semicond., 2012, 33(12): 125011. doi: 10.1088/1674-4926/33/12/125011.
      Citation:
      Yang Geliang, Wang Zhigong, Li Zhiqun, Li Qin, Li Zhu, Liu Faen. A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique[J]. Journal of Semiconductors, 2012, 33(12): 125011. doi: 10.1088/1674-4926/33/12/125011 ****
      Yang G L, Wang Z G, Li Z Q, Li Q, Li Z, Liu F E. A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique[J]. J. Semicond., 2012, 33(12): 125011. doi: 10.1088/1674-4926/33/12/125011.

      A 31.7-GHz high linearity millimeter-wave CMOS LNA using an ultra-wideband input matching technique

      DOI: 10.1088/1674-4926/33/12/125011
      Funds:

      The National Basic Research Program of China (973 Program)

      The National High Technology Research and Development Program of China (863 Program)

      International cooperation projects in science and technology

      • Received Date: 2015-08-21
      • Accepted Date: 2012-04-18
      • Revised Date: 2012-06-18
      • Published Date: 2012-11-13

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