| Citation: |
Nie Weidong, Wu Jin, Ma Xiaohui, Yu Zongguang. Energy capability enhancement for isolated extended drain NMOS transistors[J]. Journal of Semiconductors, 2012, 33(2): 024004. doi: 10.1088/1674-4926/33/2/024004
****
Nie W D, Wu J, Ma X H, Yu Z G. Energy capability enhancement for isolated extended drain NMOS transistors[J]. J. Semicond., 2012, 33(2): 024004. doi: 10.1088/1674-4926/33/2/024004.
|
Energy capability enhancement for isolated extended drain NMOS transistors
DOI: 10.1088/1674-4926/33/2/024004
-
Abstract
Isolated extended drain NMOS (EDNMOS) transistors are widely used in power signal processing. The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial (p-epi) thickness, n-type buried layer (BLN) and nwell doping distribution, the peak electric field is decreased by 30% and the peak hole current is decreased by 60%, which obviously suppress the parasitic NPN effect. Measured I-V characteristics and transmission line pulsing (TLP) results show that the on-state breakdown voltage is increased from 28 to 37 V when 6 V VMgs is applied and the energy capability is improved by about 30%, while the on-state resistance remains unchanged.-
Keywords:
- energy capability
-
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] -
Proportional views
DownLoad: