J. Semicond. > 2012, Volume 33 > Issue 2 > 024006

SEMICONDUCTOR DEVICES

Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell

Cui Min, Chen Nuofu, Yang Xiaoli and Zhang Han

+ Author Affiliations
DOI: 10.1088/1674-4926/33/2/024006

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Abstract: GaInP/GaAs/Ge tandem solar cells were fabricated by a MOCVD technique. The photoelectric properties of the solar cells were characterized by a current-voltage test method. The dependence of the solar cell's characteristics on temperature were investigated from 30 to 170 ℃ at intervals of 20 ℃. Test results indicated that with increasing temperature, Jsc of the cell increased slightly with a temperature coefficient of 9.8 (μA/cm2)/℃. Voc reduced sharply with a coefficient of -5.6 mV/℃. FF was reduced with a temperature coefficient of -0.00063/℃. Furthermore, the conversion efficiency decreased linearly with increasing temperature which decreased from 28% at 30 ℃ to 22.1% at 130 ℃. Also, detailed theoretical analyses for temperature characteristics of the solar cell were given.

Key words: GaInP/GaAs/Getandem solar cellstemperature dependencesolar energy

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    Cui Min, Chen Nuofu, Yang Xiaoli, Zhang Han. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. Journal of Semiconductors, 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006
    Cui M, Chen N F, Yang X L, Zhang H. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. J. Semicond., 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006.
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    Received: 20 August 2015 Revised: 22 September 2011 Online: Published: 01 February 2012

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      Cui Min, Chen Nuofu, Yang Xiaoli, Zhang Han. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. Journal of Semiconductors, 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006 ****Cui M, Chen N F, Yang X L, Zhang H. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. J. Semicond., 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006.
      Citation:
      Cui Min, Chen Nuofu, Yang Xiaoli, Zhang Han. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. Journal of Semiconductors, 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006 ****
      Cui M, Chen N F, Yang X L, Zhang H. Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell[J]. J. Semicond., 2012, 33(2): 024006. doi: 10.1088/1674-4926/33/2/024006.

      Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell

      DOI: 10.1088/1674-4926/33/2/024006
      Funds:

      Doctoral Initial Fund of Beijing University of Technology (X0006015201101)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-06-27
      • Revised Date: 2011-09-22
      • Published Date: 2012-01-20

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