J. Semicond. > 2012, Volume 33 > Issue 2 > 025006

SEMICONDUCTOR INTEGRATED CIRCUITS

A monolithic RF transceiver for DC-OFDM UWB

Chen Yunfeng, Li Wei, Fu Haipeng, Gao Ting, Chen Danfeng, Zhou Feng, Cai Deyun, Li Dan, Niu Yangyang, Zhou Hanchao, Zhu Ning, Li Ning and Ren Junyan

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DOI: 10.1088/1674-4926/33/2/025006

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Abstract: This paper presents a first monolithic RF transceiver for DC-OFDM UWB applications. The proposed direct-conversion transceiver integrates all the building blocks including two receiver (Rx) cores, two transmitter (Tx) cores and a dual-carrier frequency synthesizer (DC-FS) as well as a 3-wire serial peripheral interface (SPI) to set the operating status of the transceiver. The ESD-protected chip is fabricated by a TSMC 0.13-μm RF CMOS process with a die size of 4.5 × 3.6 mm2. The measurement results show that the wideband Rx achieves an NF of 5-6.2 dB, a max gain of 76-84 dB with 64-dB variable gain, an in-/out-of-band IIP3 of -6/+4 dBm and an input loss S_11 of < -10 in all bands. The Tx achieves an LOLRR/IMGRR of -34/-33 dBc, a typical OIP3 of +6 dBm and a maximum output power of -5 dBm. The DC-FS outputs two separate carriers simultaneously with an inter-band hopping time of < 1.2 ns. The full chip consumes a maximum current of 420 mA under a 1.2-V supply.

Key words: DC-OFDM UWB

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    Xiaofei Liao, Dixian Zhao, Xiaohu You. An E-band CMOS frequency quadrupler with 1.7-dBm output power and 45-dB fundamental suppression[J]. Journal of Semiconductors, 2022, 43(9): 092401. doi: 10.1088/1674-4926/43/9/092401
    X F Liao, D X Zhao, X H You. An E-band CMOS frequency quadrupler with 1.7-dBm output power and 45-dB fundamental suppression[J]. J. Semicond, 2022, 43(9): 092401. doi: 10.1088/1674-4926/43/9/092401
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    Received: 20 August 2015 Revised: 17 September 2011 Online: Published: 01 February 2012

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      Xiaofei Liao, Dixian Zhao, Xiaohu You. An E-band CMOS frequency quadrupler with 1.7-dBm output power and 45-dB fundamental suppression[J]. Journal of Semiconductors, 2022, 43(9): 092401. doi: 10.1088/1674-4926/43/9/092401 ****X F Liao, D X Zhao, X H You. An E-band CMOS frequency quadrupler with 1.7-dBm output power and 45-dB fundamental suppression[J]. J. Semicond, 2022, 43(9): 092401. doi: 10.1088/1674-4926/43/9/092401
      Citation:
      Chen Yunfeng, Li Wei, Fu Haipeng, Gao Ting, Chen Danfeng, Zhou Feng, Cai Deyun, Li Dan, Niu Yangyang, Zhou Hanchao, Zhu Ning, Li Ning, Ren Junyan. A monolithic RF transceiver for DC-OFDM UWB[J]. Journal of Semiconductors, 2012, 33(2): 025006. doi: 10.1088/1674-4926/33/2/025006 ****
      Chen Y F, Li W, Fu H P, Gao T, Chen D F, Zhou F, Cai D Y, Li D, Niu Y Y, Zhou H C, Zhu N, Li N, Ren J Y. A monolithic RF transceiver for DC-OFDM UWB[J]. J. Semicond., 2012, 33(2): 025006. doi: 10.1088/1674-4926/33/2/025006.

      A monolithic RF transceiver for DC-OFDM UWB

      DOI: 10.1088/1674-4926/33/2/025006
      • Received Date: 2015-08-20
      • Accepted Date: 2011-08-04
      • Revised Date: 2011-09-17
      • Published Date: 2012-01-20

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