Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

Wang Jianqiang; Gao Hua; Zhang Jian; Meng Fanying; Ye Qinghao

doi:10.1088/1674-4926/33/3/033001

J. Semicond. > 2012, Volume 33 > Issue 3 > 033001

SEMICONDUCTOR MATERIALS

Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying and Ye Qinghao

+ Author Affiliations

DOI: 10.1088/1674-4926/33/3/033001

Abstract: We investigate the recombination mechanism in an a-Si/c-Si interface, and analyze the key factors that influence the interface passivation quality, such as Q_s, δ_p/δ_n and D_it. The polarity of the dielectric film is very important to the illustration level dependent passivation quality; when nδ_n=pδ_p and the defect level E_t equal to E_i (c-Si), the defect states are the most effective recombination center, AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier. Interface states (D_it) severely deteriorate V_oc compared with J_sc for a-Si/c-Si HJ cell performance when D_it is over 1 × 10¹⁰ cm^-2·eV^-1. For a c-Si(P)/a-Si(P⁺) structure, φ_BSF in c-Si and φ₀ in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P⁺) interface recombination.

Key words: a-Si/c-Si interface, a-Si emitter property, interface defect states

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[13]
[14]
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Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying, Ye Qinghao. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. Journal of Semiconductors, 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001

Wang J Q, Gao H, Zhang J, Meng F Y, Ye Q H. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. J. Semicond., 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001.

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Received: 20 August 2015 Revised: 23 June 2011 Online: Published: 01 March 2012

We investigate the recombination mechanism in an a-Si/c-Si interface, and analyze the key factors that influence the interface passivation quality, such as Q_s, δ_p/δ_n and D_it. The polarity of the dielectric film is very important to the illustration level dependent passivation quality; when nδ_n=pδ_p and the defect level E_t equal to E_i (c-Si), the defect states are the most effective recombination center, AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier. Interface states (D_it) severely deteriorate V_oc compared with J_sc for a-Si/c-Si HJ cell performance when D_it is over 1 × 10¹⁰ cm^-2·eV^-1. For a c-Si(P)/a-Si(P⁺) structure, φ_BSF in c-Si and φ₀ in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P⁺) interface recombination.

Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

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