| Citation: |
Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying, Ye Qinghao. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. Journal of Semiconductors, 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001
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Wang J Q, Gao H, Zhang J, Meng F Y, Ye Q H. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. J. Semicond., 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001.
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Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation
doi: 10.1088/1674-4926/33/3/033001
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Abstract
We investigate the recombination mechanism in an a-Si/c-Si interface, and analyze the key factors that influence the interface passivation quality, such as Qs, δp/δn and Dit. The polarity of the dielectric film is very important to the illustration level dependent passivation quality; when nδn=pδp and the defect level Et equal to Ei (c-Si), the defect states are the most effective recombination center, AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier. Interface states (Dit) severely deteriorate Voc compared with Jsc for a-Si/c-Si HJ cell performance when Dit is over 1 × 1010 cm-2·eV-1. For a c-Si(P)/a-Si(P+) structure, φBSF in c-Si and φ0 in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P+) interface recombination. -
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