| Citation: |
Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying, Ye Qinghao. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. Journal of Semiconductors, 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001
****
Wang J Q, Gao H, Zhang J, Meng F Y, Ye Q H. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. J. Semicond., 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001.
|
Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation
DOI: 10.1088/1674-4926/33/3/033001
-
Abstract
We investigate the recombination mechanism in an a-Si/c-Si interface, and analyze the key factors that influence the interface passivation quality, such as Qs, δp/δn and Dit. The polarity of the dielectric film is very important to the illustration level dependent passivation quality; when nδn=pδp and the defect level Et equal to Ei (c-Si), the defect states are the most effective recombination center, AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier. Interface states (Dit) severely deteriorate Voc compared with Jsc for a-Si/c-Si HJ cell performance when Dit is over 1 × 1010 cm-2·eV-1. For a c-Si(P)/a-Si(P+) structure, φBSF in c-Si and φ0 in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P+) interface recombination. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] -
Proportional views
DownLoad: