J. Semicond. > 2012, Volume 33 > Issue 3 > 033001

SEMICONDUCTOR MATERIALS

Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying and Ye Qinghao

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DOI: 10.1088/1674-4926/33/3/033001

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Abstract: We investigate the recombination mechanism in an a-Si/c-Si interface, and analyze the key factors that influence the interface passivation quality, such as Qs, δpn and Dit. The polarity of the dielectric film is very important to the illustration level dependent passivation quality; when nδn=pδp and the defect level Et equal to Ei (c-Si), the defect states are the most effective recombination center, AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier. Interface states (Dit) severely deteriorate Voc compared with Jsc for a-Si/c-Si HJ cell performance when Dit is over 1 × 1010 cm-2·eV-1. For a c-Si(P)/a-Si(P+) structure, φBSF in c-Si and φ0 in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P+) interface recombination.

Key words: a-Si/c-Si interfacea-Si emitter propertyinterface defect states

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[11]
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[13]
[14]
[15]
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    Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying, Ye Qinghao. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. Journal of Semiconductors, 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001
    Wang J Q, Gao H, Zhang J, Meng F Y, Ye Q H. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. J. Semicond., 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001.
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    Received: 20 August 2015 Revised: 23 June 2011 Online: Published: 01 March 2012

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      Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying, Ye Qinghao. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. Journal of Semiconductors, 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001 ****Wang J Q, Gao H, Zhang J, Meng F Y, Ye Q H. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. J. Semicond., 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001.
      Citation:
      Wang Jianqiang, Gao Hua, Zhang Jian, Meng Fanying, Ye Qinghao. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. Journal of Semiconductors, 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001 ****
      Wang J Q, Gao H, Zhang J, Meng F Y, Ye Q H. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation[J]. J. Semicond., 2012, 33(3): 033001. doi: 10.1088/1674-4926/33/3/033001.

      Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

      DOI: 10.1088/1674-4926/33/3/033001
      Funds:

      International Joint Foundation of Shanghai Science & Technology Commission with Applied Material (No.08520741400), Talent Foundation of Shanghai Science & Technology Commission (No.08XD14022)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-06-23
      • Revised Date: 2011-06-23
      • Published Date: 2012-02-20

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