| Citation: |
Liu Chunjuan, Liu Su, Feng Jingjing, Wu Rong. Nickel ohmic contacts of high-concentration P-implanted 4H-SiC[J]. Journal of Semiconductors, 2012, 33(3): 036002. doi: 10.1088/1674-4926/33/3/036002
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Liu C J, Liu S, Feng J J, Wu R. Nickel ohmic contacts of high-concentration P-implanted 4H-SiC[J]. J. Semicond., 2012, 33(3): 036002. doi: 10.1088/1674-4926/33/3/036002.
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Abstract
Different-dose phosphorus ion implantation into 4H-SiC followed by high-temperature annealing was investigated. AlN/BN and graphite post-implantation annealing for ion-implanted SiC at 1650 ℃ for 30 min was conducted to electrically activate the implanted P+ ions. Ni contacts to the P+-implanted 4H-SiC layers were examined by transmission line model and Hall measurements fabricated on P-implanted (0001). The results indicated that a high-quality ohmic contact and specific contact resistivity of 1.30 × 10-6 Ω·cm2 was obtained for the P+-implanted 4H-SiC layers. The ρC values of the Ni-based implanted layers decreased with increasing P doping concentrations, and a weaker temperature dependence was observed for different samples in the 200-500 K temperature range. -
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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