| Citation: |
Zheng Dongmei, Wang Zongchi, Xiao Boqi. Correlated electron-hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure[J]. Journal of Semiconductors, 2012, 33(5): 052002. doi: 10.1088/1674-4926/33/5/052002
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Zheng D M, Wang Z C, Xiao B Q. Correlated electron-hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure[J]. J. Semicond., 2012, 33(5): 052002. doi: 10.1088/1674-4926/33/5/052002.
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Correlated electron-hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure
DOI: 10.1088/1674-4926/33/5/052002
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Abstract
Within the effective-mass and finite-height potential barrier approximation, a theoretical study of the effects of strain and hydrostatic pressure on the exciton emission wavelength and electron-hole recombination rate in wurtzite cylindrical GaN/AlxGa1-xN quantum dots (QDs) is performed using a variational approach. Numerical results show that the emission wavelength with strain effect is higher than that without strain effect when the QD height is large (> 3.8 nm), but the status is opposite when the QD height is small (< 3.8 nm). The height of GaN QDs must be less than 5.5 nm for an efficient electron-hole recombination process due to the strain effect. The emission wavelength decreases linearly and the electron-hole recombination rate increases almost linearly with applied hydrostatic pressure. The hydrostatic pressure has a remarkable influence on the emission wavelength for large QDs, and has a significant influence on the electron-hole recombination rate for small QDs. Furthermore, the present numerical outcomes are in qualitative agreement with previous experimental findings under zero pressure.-
Keywords:
- GaN quantum dots,
- excitons,
- strain,
- hydrostatic pressure
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References
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