| Citation: |
Guo Hongying, Sun Yuanping, Yong-Hoon Cho, Eun-Kyung Suh, Hai-Joon Lee, Rak-Jun Choi, Yoon-Bong Hahn. Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency[J]. Journal of Semiconductors, 2012, 33(5): 053001. doi: 10.1088/1674-4926/33/5/053001
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Guo H Y, Sun Y P, Y H Cho, E K Suh, H J Lee, R J Choi, Y B Hahn. Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency[J]. J. Semicond., 2012, 33(5): 053001. doi: 10.1088/1674-4926/33/5/053001.
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Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency
DOI: 10.1088/1674-4926/33/5/053001
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Abstract
Phase separations have been studied for graded-indium content InxGa1-xN/GaN multiple quantum wells (MQWs) with different indium contents by means of photoluminescence (PL), cathodeluminescence (CL) and time-resolved PL (TRPL) techniques. Besides the main emission peaks, all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K. CL images show a clear contrast for 3 samples, which indicates an increasing phase separation with increasing indium content. TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content, which means a carrier transferring from low indium content structures to high indium content structures. -
References
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