| Citation: |
R. K. Parida, A. K. Panda. GaN based transfer electron and avalanche transit time devices[J]. Journal of Semiconductors, 2012, 33(5): 054001. doi: 10.1088/1674-4926/33/5/054001
****
R. K. Parida, A. K. Panda. GaN based transfer electron and avalanche transit time devices[J]. J. Semicond., 2012, 33(5): 054001. doi: 10.1088/1674-4926/33/5/054001.
|
-
Abstract
A new model is developed to study the microwave/mm wave characteristics of two-terminal GaN-based transfer electron devices (TEDs), namely a Gunn diode and an impact avalanche transit time (IMPATT) device. Microwave characteristics such as device efficiency and the microwave power generated are computed and compared at D-band (140 GHz center frequency) to see the potentiality of each device under the same operating conditions. It is seen that GaN-based IMPATT devices surpass the Gunn diode in the said frequency region.-
Keywords:
- GaN,
- transfer electron device,
- avalanche transit time device
-
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] -
Proportional views
DownLoad: