A 6th order wideband active-RC LPF for LTE application

Wei Baoyue; Li Hongkun; Wang Yunfeng; Zhang Haiying

doi:10.1088/1674-4926/33/6/065003

J. Semicond. > 2012, Volume 33 > Issue 6 > 065003

SEMICONDUCTOR INTEGRATED CIRCUITS

A 6th order wideband active-RC LPF for LTE application

Wei Baoyue, Li Hongkun, Wang Yunfeng and Zhang Haiying

+ Author Affiliations

DOI: 10.1088/1674-4926/33/6/065003

Abstract: A low power, highly linear active-RC filter is presented. This filter is synthesized from a low pass 6 order Chebyshev RLC ladder, and exhibits a reconfigurable bandwidth (10 MHz, 50 MHz). In order to meet the high cutoff frequency (50 MHz) and strict adjacent channel rejection requirements, a novel operational amplifier based on a new compensation technique is used, which optimizes high frequency filter performance and minimizes current consumption. This filter is fabricated in a 0.18 μm CMOS process, the measurement results indicate that the filter provides 10 MHz and 50 MHz selectable bandwidth, and excellent adjacent channel rejection: -15.3 dB at 12.5 MHz with 10 MHz cutoff frequency, -8.3 dB at 60 MHz with 50 MHz cutoff frequency, three times out-band rejection more than 60 dB while the in-band ripple is less than 1 dB.

Key words: active-RC

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Wei Baoyue, Li Hongkun, Wang Yunfeng, Zhang Haiying. A 6th order wideband active-RC LPF for LTE application[J]. Journal of Semiconductors, 2012, 33(6): 065003. doi: 10.1088/1674-4926/33/6/065003

Wei B Y, Li H K, Wang Y F, Zhang H Y. A 6th order wideband active-RC LPF for LTE application[J]. J. Semicond., 2012, 33(6): 065003. doi: 10.1088/1674-4926/33/6/065003.

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Received: 20 August 2015 Revised: 16 January 2012 Online: Published: 01 June 2012

A low power, highly linear active-RC filter is presented. This filter is synthesized from a low pass 6 order Chebyshev RLC ladder, and exhibits a reconfigurable bandwidth (10 MHz, 50 MHz). In order to meet the high cutoff frequency (50 MHz) and strict adjacent channel rejection requirements, a novel operational amplifier based on a new compensation technique is used, which optimizes high frequency filter performance and minimizes current consumption. This filter is fabricated in a 0.18 μm CMOS process, the measurement results indicate that the filter provides 10 MHz and 50 MHz selectable bandwidth, and excellent adjacent channel rejection: -15.3 dB at 12.5 MHz with 10 MHz cutoff frequency, -8.3 dB at 60 MHz with 50 MHz cutoff frequency, three times out-band rejection more than 60 dB while the in-band ripple is less than 1 dB.

A 6th order wideband active-RC LPF for LTE application

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