High voltage generator circuit with low power and high efficiency applied in EEPROM

Liu Yan; Zhang Shilin; Zhao Yiqiang

doi:10.1088/1674-4926/33/6/065006

J. Semicond. > 2012, Volume 33 > Issue 6 > 065006

SEMICONDUCTOR INTEGRATED CIRCUITS

High voltage generator circuit with low power and high efficiency applied in EEPROM

Liu Yan, Zhang Shilin and Zhao Yiqiang

+ Author Affiliations

DOI: 10.1088/1674-4926/33/6/065006

Abstract: This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V_th) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.

Key words: CTS charge pump

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Liu Yan, Zhang Shilin, Zhao Yiqiang. High voltage generator circuit with low power and high efficiency applied in EEPROM[J]. Journal of Semiconductors, 2012, 33(6): 065006. doi: 10.1088/1674-4926/33/6/065006

Liu Y, Zhang S L, Zhao Y Q. High voltage generator circuit with low power and high efficiency applied in EEPROM[J]. J. Semicond., 2012, 33(6): 065006. doi: 10.1088/1674-4926/33/6/065006.

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Received: 20 August 2015 Revised: 09 January 2012 Online: Published: 01 June 2012

This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V_th) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.

High voltage generator circuit with low power and high efficiency applied in EEPROM

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