| Citation: |
Li Juan, Liu Ning, Luo Chong, Meng Zhiguo, Xiong Shaozhen, Hoi Sing Kwok. H-plasma-assisted aluminum induced crystallization of amorphous silicon[J]. Journal of Semiconductors, 2012, 33(6): 066003. doi: 10.1088/1674-4926/33/6/066003
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Li J, Liu N, Luo C, Meng Z G, Xiong S Z, H S Kwok. H-plasma-assisted aluminum induced crystallization of amorphous silicon[J]. J. Semicond., 2012, 33(6): 066003. doi: 10.1088/1674-4926/33/6/066003.
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H-plasma-assisted aluminum induced crystallization of amorphous silicon
DOI: 10.1088/1674-4926/33/6/066003
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Abstract
A technique to improve and accelerate aluminum induced crystallization (AIC) by using hydrogen plasma is proposed. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm2/(V·S). The possible mechanism of AIC assisted by hydrogen radicals is also discussed.-
Keywords:
- poly-silicon
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References
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