Abstract: Intrinsic β-Ga₂O₃ and Zn-doped β-Ga₂O₃ films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In comparison with the intrinsic β-Ga₂O₃ films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence of Zn-doped β-Ga₂O₃ films change significantly. The post-annealed β-Ga₂O₃ films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.

Key words: transparent conductive oxides, Zn-doped β-Ga₂O₃, optical transmittance, optical band gap, photoluminescence