Structural and optical properties of Zn-doped β-Ga<sub>2</sub>O<sub>3</sub> films

Yue Wei; Yan Jinliang; Wu Jiangyan; Zhang Liying

doi:10.1088/1674-4926/33/7/073003

J. Semicond. > 2012, Volume 33 > Issue 7 > 073003

SEMICONDUCTOR MATERIALS

Structural and optical properties of Zn-doped β-Ga₂O₃ films

Yue Wei, Yan Jinliang, Wu Jiangyan and Zhang Liying

+ Author Affiliations

DOI: 10.1088/1674-4926/33/7/073003

Abstract: Intrinsic β-Ga₂O₃ and Zn-doped β-Ga₂O₃ films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In comparison with the intrinsic β-Ga₂O₃ films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence of Zn-doped β-Ga₂O₃ films change significantly. The post-annealed β-Ga₂O₃ films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.

Key words: transparent conductive oxides, Zn-doped β-Ga₂O₃, optical transmittance, optical band gap, photoluminescence

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]

1	Effect of nitrogen incorporation and surface passivation on photoluminescence properties of InAs-based nanowires Ratmir Ustimenko, Danila Karaulov, Maxim Vinnichenko, Ilya Norvatov, Andrey Kaveev, et al. Journal of Semiconductors. doi: 10.1088/1674-4926/25030041
2	Broadband photoluminescence and nonlinear chiroptical properties in chiral 2D halide perovskites Dezhong Hu, Zhen Zhang, Kaixuan Zhang, Qian He, Weijie Zhao, et al. Journal of Semiconductors. doi: 10.1088/1674-4926/24110034
3	Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots Dandan Ning, Yanan Chen, Xinkun Li, Dechun Liang, Shufang Ma, et al. Journal of Semiconductors, 2020, 41(12): 122101. doi: 10.1088/1674-4926/41/12/122101
4	Anomalous temperature-dependent photoluminescence peak energy in InAlN alloys Wei Li, Peng Jin, Weiying Wang, Defeng Mao, Guipeng Liu, et al. Journal of Semiconductors, 2014, 35(9): 093001. doi: 10.1088/1674-4926/35/9/093001
5	Parameters influencing the optical properties of SnS thin films Priyal Jain, P. Arun Journal of Semiconductors, 2013, 34(9): 093004. doi: 10.1088/1674-4926/34/9/093004
6	The effects of electron irradiation on the optical properties of the organic semiconductor polypyrrole J. V. Thombare, M. C. Rath, S. H. Han, V. J. Fulari Journal of Semiconductors, 2013, 34(9): 093001. doi: 10.1088/1674-4926/34/9/093001
7	Structural and optical properties of Zn₃N₂ films prepared by magnetron sputtering in NH₃-Ar mixture gases Wu Jiangyan, Yan Jinliang, Yue Wei, Li Ting Journal of Semiconductors, 2012, 33(4): 043001. doi: 10.1088/1674-4926/33/4/043001
8	A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector Yu Changliang, Mao Luhong, Xiao Xindong, Xie Sheng, Zhang Shilin, et al. Journal of Semiconductors, 2009, 30(10): 105010. doi: 10.1088/1674-4926/30/10/105010
9	Optical properties in 1D photonic crystal structure using Si/C60 multilayers Chen Jing, Tang Jiyu, Han Peide, Chen Junfang Journal of Semiconductors, 2009, 30(4): 043001. doi: 10.1088/1674-4926/30/4/043001
10	Synthesis of ZnS whiskers and their photoluminescence properties Du Yuanyuan, Jie Wanqi, Li Huanyong Journal of Semiconductors, 2009, 30(8): 083005. doi: 10.1088/1674-4926/30/8/083005
11	Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films Ding Wuchang, Zuo Yuhua, Zhang Yun, Guo Jianchuan, Cheng Buwen, et al. Journal of Semiconductors, 2009, 30(10): 102001. doi: 10.1088/1674-4926/30/10/102001
12	Visible photoluminescence of porous silicon covered with an HfON dielectric layer Jiang Ran, Zhang Yan Journal of Semiconductors, 2009, 30(8): 082003. doi: 10.1088/1674-4926/30/8/082003
13	Photoluminescence of the Beryllium Acceptor at the Centre of Quantum Wells Zheng Weimin, Li Sumei, Lü Yingbo, Wang Aifang, Wu Ailing, et al. Journal of Semiconductors, 2008, 29(11): 2115-2120.
14	Synthesis and Photoluminescence Properties of Dy-Doped ZnO Nanocrystals Zhang Linli, Guo Changxin Chinese Journal of Semiconductors , 2007, 28(6): 887-892.
15	An Evanescent Coupling Approach for Optical Characterization of ZnO Nanowires Yang Qing, Lou Jingyi, Yang Deren, Tong Limin Chinese Journal of Semiconductors , 2006, 27(3): 425-428.
16	Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs Yu Tongjun, Kang Xiangning, Qin Zhixin, Chen Zhizhong, Yang Zhijian, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 20-24.
17	Photoluminescence of nc-Si/SiN Superlattices Embeddedin Optical Microcavities Chen San, Qian Bo, Chen Kunji, Cen Zhanhong, Liu Yansong, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 25-28.
18	Photoluminescence During the Crystallization of a-Si∶H/SiO2 Multilayers Ma Zhongyuan, Han Peigao, Li Wei, Chen San, Qian Bo, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 76-79.
19	Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films Guo Hengqun, Lin Shangxin, Wang Qiming Chinese Journal of Semiconductors , 2006, 27(2): 345-349.
20	Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, et al. Chinese Journal of Semiconductors , 2006, 27(3): 397-402.

Search

GET CITATION

Yue Wei, Yan Jinliang, Wu Jiangyan, Zhang Liying. Structural and optical properties of Zn-doped β-Ga₂O₃ films[J]. Journal of Semiconductors, 2012, 33(7): 073003. doi: 10.1088/1674-4926/33/7/073003

Yue W, Yan J L, Wu J Y, Zhang L Y. Structural and optical properties of Zn-doped β-Ga2O3 films[J]. J. Semicond., 2012, 33(7): 073003. doi: 10.1088/1674-4926/33/7/073003.

Export: BibTex EndNote

Article Metrics

Article views: 3961 Times PDF downloads: 2863 Times Cited by: 0 Times

History

Received: 20 August 2015 Revised: 14 February 2012 Online: Published: 01 July 2012

Intrinsic β-Ga₂O₃ and Zn-doped β-Ga₂O₃ films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In comparison with the intrinsic β-Ga₂O₃ films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence of Zn-doped β-Ga₂O₃ films change significantly. The post-annealed β-Ga₂O₃ films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.

Structural and optical properties of Zn-doped β-Ga₂O₃ films

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Structural and optical properties of Zn-doped β-Ga₂O₃ films

DOI: 10.1088/1674-4926/33/7/073003

Abstract

References

Proportional views

Catalog

Structural and optical properties of Zn-doped β-Ga2O3 films

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Structural and optical properties of Zn-doped β-Ga2O3 films

DOI: 10.1088/1674-4926/33/7/073003

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content

Structural and optical properties of Zn-doped β-Ga₂O₃ films

Structural and optical properties of Zn-doped β-Ga₂O₃ films