| Citation: |
Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, Zhang Yuming, Liu Xinyu. An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fmax of 201 GHz[J]. Journal of Semiconductors, 2012, 33(7): 074004. doi: 10.1088/1674-4926/33/7/074004
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Zhong Y H, Wang X T, Su Y B, Cao Y X, Jin Z, Zhang Y M, Liu X Y. An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fmax of 201 GHz[J]. J. Semicond., 2012, 33(7): 074004. doi: 10.1088/1674-4926/33/7/074004.
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An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fmax of 201 GHz
DOI: 10.1088/1674-4926/33/7/074004
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Abstract
An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2 × 50 μm and source--drain space of 2.4 μm. The T-gate was defined by electron beam lithography in a trilayer of PMMA/Al/UVIII. The exposure dose and the development time were optimized, and followed by an appropriate residual resist removal process. These devices also demonstrated excellent DC and RF characteristics: the extrinsic maximum transconductance, the full channel current, the threshold voltage, the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm, 591 mA/mm, --0.5 V, 150 GHz and 201 GHz, respectively. The HEMTs are promising for use in millimeter-wave integrated circuits.-
Keywords:
- HEMT,
- gate-length,
- gate recess,
- InP,
- InAlAs/InGaAs
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References
[1] [2] [3] [4] [5] [6] -
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