J. Semicond. > 2012, Volume 33 > Issue 7 > 074008
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SEMICONDUCTOR DEVICES

Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer

Zhang Xiaojie, Yang Ruixia and Wang Jinghui

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DOI: 10.1088/1674-4926/33/7/074008

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Abstract: The light output power of an InGaN/GaN light-emitting diode is improved by using a SiO2/TiO2 distributed Bragg reflector (DBR) and an Al mirror as a hybrid reflective current blocking layer (CBL). Such a hybrid reflective CBL not only plays the role of the CBL by enhancing current spreading but also plays the role of a reflector by preventing photons near the p-electrode pad from being absorbed by a metal electrode. At a wavelength of 455 nm, a 1.5-pair of SiO2/TiO2 DBR and an Al mirror (i.e. 1.5-pair DBR+Al) deposited on a p-GaN layer showed a normal-incidence reflectivity as high as 97.8%. With 20 mA current injection, it was found that the output power was 25.26, 24.45, 23.58 and 22.45 mW for the LED with a 1.5-pair DBR+Al CBL, a 3-pair DBR CBL, SiO2 CBL and without a CBL, respectively.

Key words: distributed Bragg reflector

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    Received: 20 August 2015 Revised: 26 October 2011 Online: Published: 01 July 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(7): 074008
      Zhang Xiaojie, Yang Ruixia, Wang Jinghui. Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer[J]. Journal of Semiconductors, 2012, 33(7): 074008. doi: 10.1088/1674-4926/33/7/074008 ****Zhang X J, Yang R X, Wang J H. Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer[J]. J. Semicond., 2012, 33(7): 074008. doi: 10.1088/1674-4926/33/7/074008.
      Citation:
      Zhang Xiaojie, Yang Ruixia, Wang Jinghui. Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer[J]. Journal of Semiconductors, 2012, 33(7): 074008. doi: 10.1088/1674-4926/33/7/074008 ****
      Zhang X J, Yang R X, Wang J H. Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer[J]. J. Semicond., 2012, 33(7): 074008. doi: 10.1088/1674-4926/33/7/074008.
      shu

      Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer

      DOI: 10.1088/1674-4926/33/7/074008

      • College of Information Engineering, Hebei University of Technology, Tianjin 300130, China

      • College of Information Engineering, Hebei University of Technology, Tianjin 300130, China

      • The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051, China

      • Received Date: 2015-08-20
      • Accepted Date: 2011-10-26
      • Revised Date: 2011-10-26
      • Published Date: 2012-06-27

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