Abstract: The polysilicon p--i--n diode displays noticeable process compatibility and portability in advanced technologies as an electrostatic-discharge (ESD) protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p--i--n diodes. To evaluate the ESD robustness, the forward and reverse TLP I--V characteristics were measured. The polysilicon p--i--n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally, to explain the effects of the device parameters, we analyze and discuss the inherent properties of polysilicon p--i--n diodes.

Key words: polysilicon p--i--n diode