
SEMICONDUCTOR INTEGRATED CIRCUITS
Abstract: An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frequency of 170 GHz. The complete chip die, including bondpads, is 0.75 × 1.04 mm2. It consumes 440 mW from a single --4 V power supply, excluding the clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20 GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate found on the mainland of China.
Key words: InP, comparator, HBT, emitter coupled logic, latched comparator, sensitivity
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Received: 20 August 2015 Revised: 26 March 2012 Online: Published: 01 July 2012
Citation: |
Huang Zhenxing, Zhou Lei, Su Yongbo, Jin Zhi. A 20-GHz ultra-high-speed InP DHBT comparator[J]. Journal of Semiconductors, 2012, 33(7): 075003. doi: 10.1088/1674-4926/33/7/075003
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Huang Z X, Zhou L, Su Y B, Jin Z. A 20-GHz ultra-high-speed InP DHBT comparator[J]. J. Semicond., 2012, 33(7): 075003. doi: 10.1088/1674-4926/33/7/075003.
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