A 20-GHz ultra-high-speed InP DHBT comparator

Huang Zhenxing; Zhou Lei; Su Yongbo; Jin Zhi

doi:10.1088/1674-4926/33/7/075003

J. Semicond. > 2012, Volume 33 > Issue 7 > 075003

SEMICONDUCTOR INTEGRATED CIRCUITS

A 20-GHz ultra-high-speed InP DHBT comparator

Huang Zhenxing, Zhou Lei, Su Yongbo and Jin Zhi

+ Author Affiliations

DOI: 10.1088/1674-4926/33/7/075003

Abstract: An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frequency of 170 GHz. The complete chip die, including bondpads, is 0.75 × 1.04 mm². It consumes 440 mW from a single --4 V power supply, excluding the clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20 GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate found on the mainland of China.

Key words: InP, comparator, HBT, emitter coupled logic, latched comparator, sensitivity

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1	An InP-based heterodimensional Schottky diode for terahertz detection Wen Ruming, Sun Hao, Teng Teng, Li Lingyun, Sun Xiaowei, et al. Journal of Semiconductors, 2012, 33(10): 104001. doi: 10.1088/1674-4926/33/10/104001
2	High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_max = 256 GHz and BV_CEO = 8.3 V Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin, et al. Journal of Semiconductors, 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004
3	Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs Zhou Shouli, Xiong Deping, Qin Yali Journal of Semiconductors, 2009, 30(4): 044003. doi: 10.1088/1674-4926/30/4/044003
4	Extraction of Temperature Parameters and Optimization of the Mextram 504 Model on SiGe HBT Ren Zheng, Hu Shaojian, Jiang Bin, Wang Yong, Zhao Yuhang, et al. Journal of Semiconductors, 2008, 29(5): 960-964.
5	A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, et al. Journal of Semiconductors, 2008, 29(10): 1898-1901.
6	A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness Zhu Min, Yin Junjian, Zhang Haiying Journal of Semiconductors, 2008, 29(8): 1441-1444.
7	Multi-Finger Power SiGe HBT with Non-Uniform Finger Spacing Jin Dongyue, Zhang Wanrong, Shen Pei, Xie Hongyun, Wang Yang, et al. Chinese Journal of Semiconductors , 2007, 28(10): 1527-1531.
8	Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy Pi Biao, Shu Yongchun, Lin Yaowang, Xu Bo, Yao Jianghong, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 28-32.
9	A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, et al. Chinese Journal of Semiconductors , 2007, 28(4): 496-499.
10	Semi-Insulating Long InP Single Crystal Growth Sun Niefeng, Mao Luhong, Guo Weilian, Zhou Xiaolong, Yang Ruixia, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 186-189.
11	Design of InGaAsP Composite Collector for InP DHBT Cheng Wei, Jin Zhi, Yu Jinyong, Liu Xinyu Chinese Journal of Semiconductors , 2007, 28(6): 943-946.
12	InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge Yu Jinyong, Liu Xinyu, Su Shubing, Wang Runmei, Xu Anhuai, et al. Chinese Journal of Semiconductors , 2007, 28(2): 154-158.
13	Growth and characterization of InP-based and phosphorous-involved materials for applications to HBTs by GSMBE were studied systematically. High quality 50ram InP-based HBT and 100mm InGaP/GaAs HBT epitaxial materials were obtained through optimizing the HBT structure design and the GSMBE growth condition. It is shown that the HBT devices and circuits with high performance can be achieved by using the epi-wafers grown by the GSMBE technology developed in this work. Qi Ming, Xu Anhuai, Ai Likun, Sun Hao, Zhu Fuying, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 182-185.
14	Agilent HBT Model Parameters Extraction Procedure For InP HBT’ He Jia, Sun Lingling, Liu Jun Chinese Journal of Semiconductors , 2007, 28(S1): 443-447.
15	A 162GHz Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Yu Jinyong, Yan Beiping, Su Shubing, Liu Xunchun, Wang Runmei, et al. Chinese Journal of Semiconductors , 2006, 27(10): 1732-1736.
16	Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP Miao Shanshan, Zhao Youwen, Dong Zhiyuan, Deng Aihong, Yang Jun, et al. Chinese Journal of Semiconductors , 2006, 27(11): 1934-1939.
17	Synthesis and Spectral Properties of InP Colloidal Quantum Dots Zhang Daoli, Zhang Jianbing, Wu Qiming, Yuan Lin, Chen Sheng, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1213-1216.
18	GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, et al. Chinese Journal of Semiconductors , 2006, 27(12): 2075-2079.
19	Design and Process for Self-Aligned InP/InGaAs SHBT Structure Li Xianjie, Cai Daomin, Zhao Yonglin, Wang Quanshu, Zhou Zhou, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 136-139.
20	Carrier Depth Profile of Si/SiGe/Si n-p-n HBT Structural Materials Characterized by Electrochemical Capacitance- Voltage Method Chinese Journal of Semiconductors , 2000, 21(11): 1050-1054.

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Huang Zhenxing, Zhou Lei, Su Yongbo, Jin Zhi. A 20-GHz ultra-high-speed InP DHBT comparator[J]. Journal of Semiconductors, 2012, 33(7): 075003. doi: 10.1088/1674-4926/33/7/075003

Huang Z X, Zhou L, Su Y B, Jin Z. A 20-GHz ultra-high-speed InP DHBT comparator[J]. J. Semicond., 2012, 33(7): 075003. doi: 10.1088/1674-4926/33/7/075003.

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Received: 20 August 2015 Revised: 26 March 2012 Online: Published: 01 July 2012

An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated using InP/GaInAs double heterojunction bipolar transistor technology with a current gain cutoff frequency of 170 GHz. The complete chip die, including bondpads, is 0.75 × 1.04 mm². It consumes 440 mW from a single --4 V power supply, excluding the clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20 GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate found on the mainland of China.

A 20-GHz ultra-high-speed InP DHBT comparator

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