J. Semicond. > 2012, Volume 33 > Issue 8 > 083003
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SEMICONDUCTOR MATERIALS

Influence of surface preparation on atomic layer deposition of Pt films

Ge Liang, Hu Cheng, Zhu Zhiwei, Zhang Wei, Wu Dongping and Zhang Shili

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DOI: 10.1088/1674-4926/33/8/083003

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Abstract: We report Pt deposition on a Si substrate by means of atomic layer deposition (ALD) using (methylcyclopentadienyl) trimethylplatinum (CH3C5H4Pt(CH3)3) and O2. Silicon substrates with both HF-last and oxide-last surface treatments are employed to investigate the influence of surface preparation on Pt-ALD. A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate. An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing. A plausible explanation to the observed difference of Pt-ALD is discussed.

Key words: Pt, atomic layer deposition, surface treatment, interfacial oxide layer

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    Received: 20 August 2015 Revised: 10 April 2012 Online: Published: 01 August 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(8): 083003
      Ge Liang, Hu Cheng, Zhu Zhiwei, Zhang Wei, Wu Dongping, Zhang Shili. Influence of surface preparation on atomic layer deposition of Pt films[J]. Journal of Semiconductors, 2012, 33(8): 083003. doi: 10.1088/1674-4926/33/8/083003 ****Ge L, Hu C, Zhu Z W, Zhang W, Wu D P, Zhang S L. Influence of surface preparation on atomic layer deposition of Pt films[J]. J. Semicond., 2012, 33(8): 083003. doi: 10.1088/1674-4926/33/8/083003.
      Citation:
      Ge Liang, Hu Cheng, Zhu Zhiwei, Zhang Wei, Wu Dongping, Zhang Shili. Influence of surface preparation on atomic layer deposition of Pt films[J]. Journal of Semiconductors, 2012, 33(8): 083003. doi: 10.1088/1674-4926/33/8/083003 ****
      Ge L, Hu C, Zhu Z W, Zhang W, Wu D P, Zhang S L. Influence of surface preparation on atomic layer deposition of Pt films[J]. J. Semicond., 2012, 33(8): 083003. doi: 10.1088/1674-4926/33/8/083003.
      shu

      Influence of surface preparation on atomic layer deposition of Pt films

      DOI: 10.1088/1674-4926/33/8/083003

      • State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

      • State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

      • State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

      • State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

      • State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

      • State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

      • Solid-State Electronics, the Å

      • ngströ

      • m Laboratory, Uppsala University, Box 534, 75121 Uppsala, Sweden

      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2012-02-11
      • Revised Date: 2012-04-10
      • Published Date: 2012-07-27

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