J. Semicond. > 2012, Volume 33 > Issue 8 > 084004
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SEMICONDUCTOR DEVICES

A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics

Cui Ning, Liang Renrong, Wang Jing, Zhou Wei and Xu Jun

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DOI: 10.1088/1674-4926/33/8/084004

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Abstract: A PNPN tunnel field effect transistor (TFET) with a high-k gate dielectric and a low-k fringe dielectric is introduced. The effects of the gate and fringe electric fields on the TFET's performance were investigated through two-dimensional simulations. The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel, while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability. The TFET device with the proposed structure has good switching characteristics, enhanced on-state current, and high process tolerance. It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology.

Key words: TFET

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    Cui Ning, Liang Renrong, Wang Jing, Zhou Wei, Xu Jun. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. Journal of Semiconductors, 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004
    Cui N, Liang R R, Wang J, Zhou W, Xu J. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. J. Semicond., 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004.
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    Received: 20 August 2015 Revised: 12 March 2012 Online: Published: 01 August 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(8): 084004
      Cui Ning, Liang Renrong, Wang Jing, Zhou Wei, Xu Jun. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. Journal of Semiconductors, 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004 ****Cui N, Liang R R, Wang J, Zhou W, Xu J. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. J. Semicond., 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004.
      Citation:
      Cui Ning, Liang Renrong, Wang Jing, Zhou Wei, Xu Jun. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. Journal of Semiconductors, 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004 ****
      Cui N, Liang R R, Wang J, Zhou W, Xu J. A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics[J]. J. Semicond., 2012, 33(8): 084004. doi: 10.1088/1674-4926/33/8/084004.
      shu

      A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics

      DOI: 10.1088/1674-4926/33/8/084004

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      The National Basic Research Program of China (973 Program)

      • Received Date: 2015-08-20
      • Accepted Date: 2012-01-16
      • Revised Date: 2012-03-12
      • Published Date: 2012-07-27

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