Citation: |
Jiang Ran, Meng Lingguo, Zhang Xijian, Hyung-Suk Jung, Cheol Seong Hwang. Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation[J]. Journal of Semiconductors, 2012, 33(9): 093004. doi: 10.1088/1674-4926/33/9/093004
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Jiang R, Meng L G, Zhang X J, H S Jung, C S Hwang. Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation[J]. J. Semicond., 2012, 33(9): 093004. doi: 10.1088/1674-4926/33/9/093004.
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Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation
DOI: 10.1088/1674-4926/33/9/093004
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Abstract
Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates. Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al2O3. Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite. This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.-
Keywords:
- Al2O3,
- high k,
- atomic layer deposition,
- graphene
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References
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