Atomic layer deposition of an Al<sub>2</sub>O<sub>3</sub> dielectric on ultrathin graphite by using electron beam irradiation

Jiang Ran; Meng Lingguo; Zhang Xijian; Hyung-Suk Jung; Cheol Seong Hwang

doi:10.1088/1674-4926/33/9/093004

Article Navigation > Journal of Semiconductors > 2012 > 33(9): 093004

Jiang Ran, Meng Lingguo, Zhang Xijian, Hyung-Suk Jung, Cheol Seong Hwang. Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation[J]. Journal of Semiconductors, 2012, 33(9): 093004. doi: 10.1088/1674-4926/33/9/093004 ****Jiang R, Meng L G, Zhang X J, H S Jung, C S Hwang. Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation[J]. J. Semicond., 2012, 33(9): 093004. doi: 10.1088/1674-4926/33/9/093004.

Citation:

Jiang Ran, Meng Lingguo, Zhang Xijian, Hyung-Suk Jung, Cheol Seong Hwang. Atomic layer deposition of an Al₂O₃ dielectric on ultrathin graphite by using electron beam irradiation[J]. Journal of Semiconductors, 2012, 33(9): 093004. doi: 10.1088/1674-4926/33/9/093004 ****

Jiang R, Meng L G, Zhang X J, H S Jung, C S Hwang. Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation[J]. J. Semicond., 2012, 33(9): 093004. doi: 10.1088/1674-4926/33/9/093004.

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Atomic layer deposition of an Al₂O₃ dielectric on ultrathin graphite by using electron beam irradiation

DOI: 10.1088/1674-4926/33/9/093004

School of Physics, Shandong University, Jinan 250100, China
School of Physics, Shandong University, Jinan 250100, China
School of Physics, Shandong University, Jinan 250100, China
Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea
Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea

Funds:

the Independent Innovation Foundation of Shandong University；the China Postdoctoral Special Foundation； China Postdoctoral Science Foundation；Postdoctoral Innovation Foundation of Shandong Province

Received Date: 2015-08-20
Accepted Date: 2011-11-22
Revised Date: 2012-05-28
Published Date: 2012-08-21

Abstract

Abstract

Atomic layer deposition of an Al₂O₃ dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates. Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al₂O₃. Improvement of the Al₂O₃ layer deposition morphology was observed when using this radiation exposure on graphite. This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.
- Al₂O₃,
- high k,
- atomic layer deposition,
- graphene

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Atomic layer deposition of an Al₂O₃ dielectric on ultrathin graphite by using electron beam irradiation

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Atomic layer deposition of an Al₂O₃ dielectric on ultrathin graphite by using electron beam irradiation

Atomic layer deposition of an Al₂O₃ dielectric on ultrathin graphite by using electron beam irradiation