| Citation: |
Cui Wei, Tang Zhaohuan, Tan Kaizhou, Zhang Jing, Zhong Yi, Hu Huiyong, Xu Shiliu, Li Ping, Hu Gangyi. A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate[J]. Journal of Semiconductors, 2012, 33(9): 094005. doi: 10.1088/1674-4926/33/9/094005
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Cui W, Tang Z H, Tan K Z, Zhang J, Zhong Y, Hu H Y, Xu S L, Li P, Hu G Y. A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate[J]. J. Semicond., 2012, 33(9): 094005. doi: 10.1088/1674-4926/33/9/094005.
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A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate
DOI: 10.1088/1674-4926/33/9/094005
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Abstract
A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics. -
References
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