SEMICONDUCTOR DEVICES
Abstract: We present a novel superluminescent diode (SLD) with high optical performances for hardened neutron irradiation. The degradation of the light output from the SLDs is caused by a reduction of the minority carrier lifetime resulting from displacement damage after high-energy neutron irradiation. The SLDs with a higher pre-irradiation light output will be less sensitive to radiation. We have selected an InGaAsP/InP multi-quantum well (MQW) as the active region structure for its performance, its high optical gain and minute active region. Graded-index separate-confinement-heterostructure (GRIN-SCH) has been applied for the waveguide structure. A specific absorbing region and anti-reflective coatings have been designed and optimized. Moreover, the radiation test results indicate that the SLD with an InGaAsP/InP MQW structure has better neutron hardening ability than the SLD with DH structures after a 6 × 1013-1 × 1014 n/cm2 1 MeV neutron irradiation.
Key words: superluminescent diode
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Received: 20 August 2015 Revised: 10 April 2012 Online: Published: 01 September 2012
| Citation: |
Jiao Jian, Tan Manqing, Zhao Miao, Chang Jinlong. A neutron radiation-hardened superluminescent diode[J]. Journal of Semiconductors, 2012, 33(9): 094006. doi: 10.1088/1674-4926/33/9/094006
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Jiao J, Tan M Q, Zhao M, Chang J L. A neutron radiation-hardened superluminescent diode[J]. J. Semicond., 2012, 33(9): 094006. doi: 10.1088/1674-4926/33/9/094006.
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