J. Semicond. > 2013, Volume 34 > Issue 5 > 053002
|

SEMICONDUCTOR MATERIALS

Structural and magnetic properties of Yb-implanted GaN

Chunhai Yin, Chao Liu, Dongyan Tao and Yiping Zeng

+ Author Affiliations

 Corresponding author: Liu Chao, Email:cliu@semi.ac.cn

DOI: 10.1088/1674-4926/34/5/053002

PDF

Abstract: N-type, p-type and unintentionally-doped GaN were implanted with Yb ions by double energy ion implantation and the samples were annealed at 900℃. The structural and magnetic properties of the samples have been studied by high-resolution X-ray diffraction (HRXRD), Raman scattering and with a superconducting quantum interference device (SQUID). No second phase has been observed and implantation induced defects can not be completely removed by rapid thermal annealing. The annealed samples show magnetic anisotropy and clear ferromagnetic behavior at room temperature. P-, u-and n-GaN:Yb samples show an effective magnetic moment of 1.60, 1.24 and 0.59 μB/Yb, respectively.

Key words: diluted magnetic semiconductors (DMS), room temperature ferromagnetism, ion implantation, magnetic anisotropy



[1]
Wang Y Q, Steckl A J. Three-color integration on rare-earth-doped GaN electroluminescent thin films. Appl Phys Lett, 2003, 82(4):502 doi: 10.1063/1.1539301
[2]
Bonanni A. Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths. Semicond Sci Technol, 2007, 22(9):R41
[3]
Jiang L J, Wang X L, Xiao H L, et al. Structural and magnetic properties of Sm implanted GaN. Chin Phys Lett, 2011, 26(7):077502
[4]
Hite J, Thaler G T, Khanna R, et al. Optical and magnetic properties of Eu-doped GaN. Appl Phys Lett, 2006, 89(13):132119 doi: 10.1063/1.2358293
[5]
Zhou Y K, Takahashi M, Emura S, et al. Annealing effect in GaDyN on optical and magnetic properties. Journal of Superconductivity and Novel Magnetism, 2010, 23(1):103 doi: 10.1007/s10948-009-0578-2
[6]
Nepal N, Bedair S M, El-Masry N A, et al. Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys. Appl Phys Lett, 2007, 91(22):222503 doi: 10.1063/1.2817741
[7]
Dhar S, Brandt O, Ramsteiner M, et al. Colossal magnetic moment of Gd in GaN. Phys Rev Lett, 2005, 94(3):037205 doi: 10.1103/PhysRevLett.94.037205
[8]
Dhar S, Kammermeier T, Ney A, et al. Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN. Appl Phys Lett, 2006, 89(6):062503 doi: 10.1063/1.2267900
[9]
Jadwisienczak W M, Wang J, Tanaka H, et al. Optical and magnetic properties of GaN epilayers implanted with ytterbium. Journal of Rare Earths, 2010, 28(6):931 doi: 10.1016/S1002-0721(09)60234-9
[10]
Jadwisienczak W, Palai R, Wang J, et al. Optical properties of ferromagnetic ytterbium-doped Ⅲ-nitride epilayers. Phys Status Solidi C, 2011, 8(7/8):2185
[11]
Ziegler J F, Biersack J P. http://www.srim.org/
[12]
Limmer W, Ritter W, Sauer R, et al. Raman scattering in ion-implanted GaN. Appl Phys Lett, 1998, 72(20):2589 doi: 10.1063/1.121426
[13]
Lo F Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Appl Phys Lett, 2007, 90(26):262505 doi: 10.1063/1.2753113
[14]
Liu L, Yu P, Ma Z, et al. Ferromagnetism in GaN:Gd:a density functional theory study. Phys Rev Lett, 2008, 100(12):127203 doi: 10.1103/PhysRevLett.100.127203
[15]
Kaminski A, Das Sarma S. Polaron percolation in diluted magnetic semiconductors. Phys Rev Lett, 2002, 88(24):247202 doi: 10.1103/PhysRevLett.88.247202
Fig. 1.  (a) XRD spectra and (b) XRD $\omega$-2$\theta$ scans of the as-implanted and as-annealed samples of u-GaN:Yb. The inset in Fig. 1(a) shows the X-ray rocking curves of GaN (0002) peak of the as-implanted and as-annealed samples.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Raman spectra of the as-grown, as-implanted and as-annealed samples of p-GaN:Yb.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Magnetization loops for u-GaN:Yb as-annealed samples at 300 K with the magnetic field applied parallel and perpendicular to the sample surface. The inset shows an expended region of the magnetic signals.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Hysteresis loop for n-, u-, p-GaN:Yb as-annealed sample at 300 K with the magnetic field applied perpendicular to the sample surface. The inset shows an expended region of the hysteresis loops.

DownLoad: Full-Size Img PowerPoint

Table 1.   Magnetic parameters of 900 ℃ annealed samples of GaN:Yb.
[1]
Wang Y Q, Steckl A J. Three-color integration on rare-earth-doped GaN electroluminescent thin films. Appl Phys Lett, 2003, 82(4):502 doi: 10.1063/1.1539301
[2]
Bonanni A. Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths. Semicond Sci Technol, 2007, 22(9):R41
[3]
Jiang L J, Wang X L, Xiao H L, et al. Structural and magnetic properties of Sm implanted GaN. Chin Phys Lett, 2011, 26(7):077502
[4]
Hite J, Thaler G T, Khanna R, et al. Optical and magnetic properties of Eu-doped GaN. Appl Phys Lett, 2006, 89(13):132119 doi: 10.1063/1.2358293
[5]
Zhou Y K, Takahashi M, Emura S, et al. Annealing effect in GaDyN on optical and magnetic properties. Journal of Superconductivity and Novel Magnetism, 2010, 23(1):103 doi: 10.1007/s10948-009-0578-2
[6]
Nepal N, Bedair S M, El-Masry N A, et al. Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys. Appl Phys Lett, 2007, 91(22):222503 doi: 10.1063/1.2817741
[7]
Dhar S, Brandt O, Ramsteiner M, et al. Colossal magnetic moment of Gd in GaN. Phys Rev Lett, 2005, 94(3):037205 doi: 10.1103/PhysRevLett.94.037205
[8]
Dhar S, Kammermeier T, Ney A, et al. Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN. Appl Phys Lett, 2006, 89(6):062503 doi: 10.1063/1.2267900
[9]
Jadwisienczak W M, Wang J, Tanaka H, et al. Optical and magnetic properties of GaN epilayers implanted with ytterbium. Journal of Rare Earths, 2010, 28(6):931 doi: 10.1016/S1002-0721(09)60234-9
[10]
Jadwisienczak W, Palai R, Wang J, et al. Optical properties of ferromagnetic ytterbium-doped Ⅲ-nitride epilayers. Phys Status Solidi C, 2011, 8(7/8):2185
[11]
Ziegler J F, Biersack J P. http://www.srim.org/
[12]
Limmer W, Ritter W, Sauer R, et al. Raman scattering in ion-implanted GaN. Appl Phys Lett, 1998, 72(20):2589 doi: 10.1063/1.121426
[13]
Lo F Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Appl Phys Lett, 2007, 90(26):262505 doi: 10.1063/1.2753113
[14]
Liu L, Yu P, Ma Z, et al. Ferromagnetism in GaN:Gd:a density functional theory study. Phys Rev Lett, 2008, 100(12):127203 doi: 10.1103/PhysRevLett.100.127203
[15]
Kaminski A, Das Sarma S. Polaron percolation in diluted magnetic semiconductors. Phys Rev Lett, 2002, 88(24):247202 doi: 10.1103/PhysRevLett.88.247202

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2659 Times PDF downloads: 18 Times Cited by: 0 Times

    History

    Received: 20 September 2012 Revised: 12 November 2012 Online: Published: 01 May 2013

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2013  >  34(5): 053002
      Chunhai Yin, Chao Liu, Dongyan Tao, Yiping Zeng. Structural and magnetic properties of Yb-implanted GaN[J]. Journal of Semiconductors, 2013, 34(5): 053002. doi: 10.1088/1674-4926/34/5/053002 ****C H Yin, C Liu, D Y Tao, Y P Zeng. Structural and magnetic properties of Yb-implanted GaN[J]. J. Semicond., 2013, 34(5): 053002. doi: 10.1088/1674-4926/34/5/053002.
      Citation:
      Chunhai Yin, Chao Liu, Dongyan Tao, Yiping Zeng. Structural and magnetic properties of Yb-implanted GaN[J]. Journal of Semiconductors, 2013, 34(5): 053002. doi: 10.1088/1674-4926/34/5/053002 ****
      C H Yin, C Liu, D Y Tao, Y P Zeng. Structural and magnetic properties of Yb-implanted GaN[J]. J. Semicond., 2013, 34(5): 053002. doi: 10.1088/1674-4926/34/5/053002.
      shu

      Structural and magnetic properties of Yb-implanted GaN

      DOI: 10.1088/1674-4926/34/5/053002

      • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 60876004)

      the National Natural Science Foundation of China 60876004

      More Information
      • Corresponding author: Liu Chao, Email:cliu@semi.ac.cn
      • Received Date: 2012-09-20
      • Revised Date: 2012-11-12
      • Published Date: 2013-05-01

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return