Fig. 1.
Geometry of the triangular quantum well.
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Hairui Zhang, Yong Sun. Properties of polaron in a triangular quantum well induced by the Rashba effect[J]. Journal of Semiconductors, 2014, 35(10): 102001. doi: 10.1088/1674-4926/35/10/102001
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H R Zhang, Y Sun. Properties of polaron in a triangular quantum well induced by the Rashba effect[J]. J. Semicond., 2014, 35(10): 102001. doi: 10.1088/1674-4926/35/10/102001.
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Properties of polaron in a triangular quantum well induced by the Rashba effect
DOI: 10.1088/1674-4926/35/10/102001
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Abstract
The properties of the weakly-coupling bound polaron, considering an influence of Rashba effect, which is brought about by the spin-orbit (SO) interaction, in an semiconductor triangular quantum well (TQW), have been studied by using the linear combination operator and the unitary transformation methods. We obtain an expression for the ground state energy of the weak-coupling and bound polaron in a TQW as a function of the coupling constant, Coulomb bound potential, and the electron areal density. Our numerical results show that the ground state energy of the polaron is composed of four parts, one part is caused by the electrons' own energy, the second part is caused by the Rashba effect, the third part occurs because of the Coulomb bound potential, and the last term is induced by the interaction between the electrons and LO phonons. The interactions between the orbit and the spin with different directions have different effects on the ground state energy of the polaron. -
References
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