J. Semicond. > 2014, Volume 35 > Issue 11 > 112001

SEMICONDUCTOR PHYSICS

Microwave annealing effects on ZnO films deposited by atomic layer deposition

Shirui Zhao, Yabin Dong, Mingyan Yu, Xiaolong Guo, Xinwei Xu, Yupeng Jing and Yang Xia

+ Author Affiliations

 Corresponding author: Jing Yupeng, Email:jingyupeng@ime.ac.cn

DOI: 10.1088/1674-4926/35/11/112001

PDF

Abstract: Zinc oxide thin films deposited on glass substrate at 150℃ by atomic layer deposition were annealed by the microwave method at temperatures below 500℃. The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence. The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films. The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.

Key words: ZnO, microwave, annealing



[1]
Hoffman R L, Norris B J, Wager J F. ZnO-based transparent thin-film transistors. Appl Phys Lett, 2003, 82(5):733 doi: 10.1063/1.1542677
[2]
Fortunato E M C, Barquinha P M C, Pimentel A C M B G, et al. Fully transparent ZnO thin-film transistor produced at room temperature. Adv Mater, 2005, 17(5):590 doi: 10.1002/adma.200400368
[3]
Carcia P, McLean R, Reilly M. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Appl Phys Lett, 2006, 88(12):123509 doi: 10.1063/1.2188379
[4]
Bayraktaroglu B, Leedy K, Neidhard R. Microwave ZnO thin-film transistors. IEEE Electron Device Lett, 2008, 29(9):1024 doi: 10.1109/LED.2008.2001635
[5]
Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors:a review of recent advances. Adv Mater, 2012, 24(22):2945 doi: 10.1002/adma.v24.22
[6]
Chiang H Q, Wager J F, Hoffman R L, et al. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl Phys Lett, 2005, 86(1):013503 doi: 10.1063/1.1843286
[7]
Law M, Greene L E, Johnson J C, et al. Nanowire dye-sensitized solar cells. Nature Mater, 2005, 4(6):455 doi: 10.1038/nmat1387
[8]
Lee Y C, Hu S Y, Water W, et al. Improved optical and structural properties of ZnO thin films by rapid thermal annealing. Solid State Commun, 2007, 143(4/5):250 http://www.sciencedirect.com/science/article/pii/S0038109807003821
[9]
Hong R, Huang J, He H, et al. Influence of different post-treatments on the structure and optical properties of zinc oxide thin films. Appl Surf Sci, 2005, 242(3):346 http://www.sciencedirect.com/science/article/pii/S0169433204013303
[10]
Abdelouahab G, Benramache S, Benhaoua B, et al. Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique. Journal of Semiconductors, 2013, 34(7):073002 doi: 10.1088/1674-4926/34/7/073002
[11]
Pung S Y, Choy K L, Shan C. Preferential growth of ZnO thin films by the atomic layer deposition technique. Nanotechnology, 2008, 19(43):435609 doi: 10.1088/0957-4484/19/43/435609
[12]
Kang H S, Kang J S, Kim J W, et al. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films. J Appl Phys, 2004, 95(3):1246 doi: 10.1063/1.1633343
[13]
Wang M, Wang J, Chen W, et al. Effect of preheating and annealing temperatures on quality characteristics of ZnO thin film prepared by sol-gel method. Mater Chem Phys, 2006, 97(2):219 http://www.sciencedirect.com/science/article/pii/S0254058405004980
[14]
Lee Y C, Hu S Y, Water W, et al. Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates. J Luminescence, 2009, 129(2):148 doi: 10.1016/j.jlumin.2008.09.003
[15]
Cheng Y C. Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition. Appl Surf Sci, 2011, 258(1):604 doi: 10.1016/j.apsusc.2011.07.124
[16]
Wen Zhanhua, Wang Li, Fang Wenqing, et al. Influence of annealing temperature on strucatural and optical properites of ZnO thin films. Chinese Journal of Semiconductors, 2005, 26(3):498(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX20050300D.htm
[17]
Xu P, Fu C, Hu C, et al. Ultra-shallow junctions formed using microwave annealing. Appl Phys Lett, 2013, 102(12):112114 doi: 10.1063/1.4799030
[18]
Yeh M S, Lee Y J, Hung M F, et al. High-performance gate-all-around poly-Si thin-film transistors by microwave annealing with NH3 plasma passivation. IEEE Trans Nanotechnol, 2013, 12(4):636 doi: 10.1109/TNANO.2013.2265778
[19]
Cho T C, Lu Y L, Yao J Y, et al. Microwave annealing of phosphorus and cluster carbon implanted (100) and (110) Si. ECS Journal of Solid State Science and Technology, 2013, 2(7):293 doi: 10.1149/2.010307jss
[20]
Cui M L, Wu X M, Zhuge L J, et al. Effects of annealing temperature on the structure and photoluminescence properties of ZnO films. Vacuum, 2007, 81(7):899 doi: 10.1016/j.vacuum.2006.10.011
[21]
Kukreja L M, Misra P, Fallert P, et al. Correlation of spectral features of photoluminescence with residual native defects of ZnO thin films annealed at different temperatures. J Appl Phys, 2012, 112(1):013525 doi: 10.1063/1.4730774
[22]
Fang Z B, Yan Z J, Tan Y S, et al. Influence of post-annealing treatment on the structure properties of ZnO films. Appl Surf Sci, 2005, 241(3/4):303 doi: 10.1007/11551362_64
[23]
Kang H S, Kang J S, Pang S S, et al. Variation of light emitting properties of ZnO thin films depending on post-annealing temperature. Mater Sci Eng B, 2003, 102(1-3):313 doi: 10.1016/S0921-5107(02)00730-4
[24]
Lin B, Fu Z, Jia Y. Green luminescent center in undoped zinc oxide films deposited on silicon substrates. Appl Phys Lett, 2001, 79(7):943 doi: 10.1063/1.1394173
Fig. 1.  Plot of sample annealing temperature as a function of time for different powers. Inset: schematic of the MWA equipment.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  XRD patterns of the as-deposited and the ZnO thin films annealed for 100 s with different annealing conditions.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  The (a) peak position, and (b) stress estimated from the (002) diffraction peak of XRD for ZnO films annealed at the different annealing conditions.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (a) The FWHM of the (100) and (002) diffraction peaks and (b) the grain size of the ZnO films annealed at different annealing conditions.

DownLoad: Full-Size Img PowerPoint
Fig. 5.  The PL spectra of the as-deposited and the ZnO thin films annealed for a fixed 100 seconds at different annealing conditions.

DownLoad: Full-Size Img PowerPoint

Table 1.   ALD process parameters for ZnO thin films.

Table 2.   The data evaluated from XRD patterns of the as-deposited and the ZnO thin films annealed for a fixed 100 s at different annealing conditions.
[1]
Hoffman R L, Norris B J, Wager J F. ZnO-based transparent thin-film transistors. Appl Phys Lett, 2003, 82(5):733 doi: 10.1063/1.1542677
[2]
Fortunato E M C, Barquinha P M C, Pimentel A C M B G, et al. Fully transparent ZnO thin-film transistor produced at room temperature. Adv Mater, 2005, 17(5):590 doi: 10.1002/adma.200400368
[3]
Carcia P, McLean R, Reilly M. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Appl Phys Lett, 2006, 88(12):123509 doi: 10.1063/1.2188379
[4]
Bayraktaroglu B, Leedy K, Neidhard R. Microwave ZnO thin-film transistors. IEEE Electron Device Lett, 2008, 29(9):1024 doi: 10.1109/LED.2008.2001635
[5]
Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors:a review of recent advances. Adv Mater, 2012, 24(22):2945 doi: 10.1002/adma.v24.22
[6]
Chiang H Q, Wager J F, Hoffman R L, et al. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl Phys Lett, 2005, 86(1):013503 doi: 10.1063/1.1843286
[7]
Law M, Greene L E, Johnson J C, et al. Nanowire dye-sensitized solar cells. Nature Mater, 2005, 4(6):455 doi: 10.1038/nmat1387
[8]
Lee Y C, Hu S Y, Water W, et al. Improved optical and structural properties of ZnO thin films by rapid thermal annealing. Solid State Commun, 2007, 143(4/5):250 http://www.sciencedirect.com/science/article/pii/S0038109807003821
[9]
Hong R, Huang J, He H, et al. Influence of different post-treatments on the structure and optical properties of zinc oxide thin films. Appl Surf Sci, 2005, 242(3):346 http://www.sciencedirect.com/science/article/pii/S0169433204013303
[10]
Abdelouahab G, Benramache S, Benhaoua B, et al. Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique. Journal of Semiconductors, 2013, 34(7):073002 doi: 10.1088/1674-4926/34/7/073002
[11]
Pung S Y, Choy K L, Shan C. Preferential growth of ZnO thin films by the atomic layer deposition technique. Nanotechnology, 2008, 19(43):435609 doi: 10.1088/0957-4484/19/43/435609
[12]
Kang H S, Kang J S, Kim J W, et al. Annealing effect on the property of ultraviolet and green emissions of ZnO thin films. J Appl Phys, 2004, 95(3):1246 doi: 10.1063/1.1633343
[13]
Wang M, Wang J, Chen W, et al. Effect of preheating and annealing temperatures on quality characteristics of ZnO thin film prepared by sol-gel method. Mater Chem Phys, 2006, 97(2):219 http://www.sciencedirect.com/science/article/pii/S0254058405004980
[14]
Lee Y C, Hu S Y, Water W, et al. Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates. J Luminescence, 2009, 129(2):148 doi: 10.1016/j.jlumin.2008.09.003
[15]
Cheng Y C. Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition. Appl Surf Sci, 2011, 258(1):604 doi: 10.1016/j.apsusc.2011.07.124
[16]
Wen Zhanhua, Wang Li, Fang Wenqing, et al. Influence of annealing temperature on strucatural and optical properites of ZnO thin films. Chinese Journal of Semiconductors, 2005, 26(3):498(in Chinese) http://en.cnki.com.cn/Article_en/CJFDTOTAL-BDTX20050300D.htm
[17]
Xu P, Fu C, Hu C, et al. Ultra-shallow junctions formed using microwave annealing. Appl Phys Lett, 2013, 102(12):112114 doi: 10.1063/1.4799030
[18]
Yeh M S, Lee Y J, Hung M F, et al. High-performance gate-all-around poly-Si thin-film transistors by microwave annealing with NH3 plasma passivation. IEEE Trans Nanotechnol, 2013, 12(4):636 doi: 10.1109/TNANO.2013.2265778
[19]
Cho T C, Lu Y L, Yao J Y, et al. Microwave annealing of phosphorus and cluster carbon implanted (100) and (110) Si. ECS Journal of Solid State Science and Technology, 2013, 2(7):293 doi: 10.1149/2.010307jss
[20]
Cui M L, Wu X M, Zhuge L J, et al. Effects of annealing temperature on the structure and photoluminescence properties of ZnO films. Vacuum, 2007, 81(7):899 doi: 10.1016/j.vacuum.2006.10.011
[21]
Kukreja L M, Misra P, Fallert P, et al. Correlation of spectral features of photoluminescence with residual native defects of ZnO thin films annealed at different temperatures. J Appl Phys, 2012, 112(1):013525 doi: 10.1063/1.4730774
[22]
Fang Z B, Yan Z J, Tan Y S, et al. Influence of post-annealing treatment on the structure properties of ZnO films. Appl Surf Sci, 2005, 241(3/4):303 doi: 10.1007/11551362_64
[23]
Kang H S, Kang J S, Pang S S, et al. Variation of light emitting properties of ZnO thin films depending on post-annealing temperature. Mater Sci Eng B, 2003, 102(1-3):313 doi: 10.1016/S0921-5107(02)00730-4
[24]
Lin B, Fu Z, Jia Y. Green luminescent center in undoped zinc oxide films deposited on silicon substrates. Appl Phys Lett, 2001, 79(7):943 doi: 10.1063/1.1394173

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2805 Times PDF downloads: 57 Times Cited by: 0 Times

    History

    Received: 30 April 2014 Revised: 17 June 2014 Online: Published: 01 November 2014

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2014  >  35(11): 112001
      Shirui Zhao, Yabin Dong, Mingyan Yu, Xiaolong Guo, Xinwei Xu, Yupeng Jing, Yang Xia. Microwave annealing effects on ZnO films deposited by atomic layer deposition[J]. Journal of Semiconductors, 2014, 35(11): 112001. doi: 10.1088/1674-4926/35/11/112001 ****S R Zhao, Y B Dong, M Y Yu, X L Guo, X W Xu, Y P Jing, Y Xia. Microwave annealing effects on ZnO films deposited by atomic layer deposition[J]. J. Semicond., 2014, 35(11): 112001. doi: 10.1088/1674-4926/35/11/112001.
      Citation:
      Shirui Zhao, Yabin Dong, Mingyan Yu, Xiaolong Guo, Xinwei Xu, Yupeng Jing, Yang Xia. Microwave annealing effects on ZnO films deposited by atomic layer deposition[J]. Journal of Semiconductors, 2014, 35(11): 112001. doi: 10.1088/1674-4926/35/11/112001 ****
      S R Zhao, Y B Dong, M Y Yu, X L Guo, X W Xu, Y P Jing, Y Xia. Microwave annealing effects on ZnO films deposited by atomic layer deposition[J]. J. Semicond., 2014, 35(11): 112001. doi: 10.1088/1674-4926/35/11/112001.
      shu

      Microwave annealing effects on ZnO films deposited by atomic layer deposition

      DOI: 10.1088/1674-4926/35/11/112001

      • Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China

      Funds:

      Project supported by the National Science Technology Major Project 02 and the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

      the National Science Technology Major Project 02 and the Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences 

      More Information
      • Corresponding author: Jing Yupeng, Email:jingyupeng@ime.ac.cn
      • Received Date: 2014-04-30
      • Revised Date: 2014-06-17
      • Published Date: 2014-11-01

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return