Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation

Futong Chu; Chao Chen; Xingzhao Liu

doi:10.1088/1674-4926/35/3/034007

J. Semicond. > 2014, Volume 35 > Issue 3 > 034007

SEMICONDUCTOR DEVICES

Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation

Futong Chu, Chao Chen and Xingzhao Liu

+ Author Affiliations

Corresponding author: Chu Futong, Email:cft1228@163.com

DOI: 10.1088/1674-4926/35/3/034007

Abstract: A novel AlGaN/GaN high electric mobility transistor (HEMT) with polyimide (PI)/chromium (Cr) as the passivation layer is proposed for enhancing breakdown voltage and its DC performance is also investigated. The Cr nanoparticles firstly introduced in PI thin films by the co-evaporation can be used to increase the permittivity of PI film. The high-permittivity PI/Cr passivation acting as field plate can suppress the fringing electric field peak at the drain-side edge of the gate electrode. This mechanism is demonstrated in accord with measured results. The experimental results show that in comparison with the AlGaN/GaN HEMTs without passivation, the breakdown voltage of HEMTs with the PI/Cr composite thin films can be significantly improved, from 122 to 248 V.

Key words: AlGaN/GaN, breakdown voltage, high-electron-mobility transistors, polyimide

References

[1]	Kumar V, Lu W, Schwindt R, et al. AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz. IEEE Electron Device Lett, 2002, 23(8):455 doi: 10.1109/LED.2002.801303
[2]	Wang Zhigang, Chen Wanjun, Zhang Bo, et al. A novel controllable hybrid-anode AlGaN/GaN field-effect rectifier with low operation voltage. Chin Phys Lett, 2012, 29(10):107202 doi: 10.1088/0256-307X/29/10/107202
[3]	Yang Ling, Hao Yue, Ma Xiaohua, et al. Various recipes of SiN_x passivated AlGaN/GaN high electron mobility transistors in correlation with current slump. Chin Phys Lett, 2009, 26(11):117104 doi: 10.1088/0256-307X/26/11/117104
[4]	Cheng Zhiqun, Liu Jie, Zhou Yugang, et al. Broadband microwave noise characteristics of high-linearity composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs. IEEE Electron Device Lett, 2005, 26(8):145
[5]	Xing H, Dora Y, Chini A, et al. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates. IEEE Electron Device Lett, 2004, 25(4):161 doi: 10.1109/LED.2004.824845
[6]	Karmalkar S, Mishra U K. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate. IEEE Electron Device Lett, 2001, 48(8):1515 doi: 10.1109/16.936500
[7]	Zhang N Q, Keller S, Parish G, et al. High breakdown GaN HEMT with overlapping gate structure. IEEE Electron Device Lett, 2000, 21(9):421 doi: 10.1109/55.863096
[8]	Kim Y S, Lim J, Seok O G, et al. High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment. Power Semiconductor Devices and ICs (ISPSD). IEEE 23rd International Symposium, 2011:251 http://ieeexplore.ieee.org/document/5890838/authors
[9]	Song Di, Liu Jie, Cheng Zhiquan, et al. Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse. IEEE Electron Device Lett, 2007, 28:189 doi: 10.1109/LED.2007.891281
[10]	Chen Xingbi. Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity. USA Patent, No. 6936907, 2005, Aug. 30
[11]	Li Junhong, Li Ping, Huo Weirong, et al. Analysis and fabrication of an LDMOS with high-permittivity dielectric. IEEE Electron Device Lett, 2011, 33(9):1266 http://ieeexplore.ieee.org/document/5957260/
[12]	Karmalkar S, Shur M S, Simin G, et al. Field-plate engineering for HFETs. IEEE Electron Device Lett, 2005, 52(12):2534 doi: 10.1109/TED.2005.859568
[13]	Hampson M D, Shen S C, Schwindt R S, et al. Polyimide passivated AlGaN/GaN HFETs with 7.65 W/mm at 18 GHz. IEEE Electron Device Lett, 2004, 25:238 doi: 10.1109/LED.2004.826565
[14]	Tian B, Chen C, Zhang J, et al. Structure and electrical characteristics of AlGaN/GaN MISHFET with Al₂O₃ thin film as both surface passivation and gate dielectric. Semicond Sci Technol, 2011, 26:085023 doi: 10.1088/0268-1242/26/8/085023
[15]	Tan I H, Sinder G L, Hu E L. A self-consistent solution of Schrödinger-Poisson equations using a nonuniform mesh. J Appl Phys, 1990, 68(8):4071 doi: 10.1063/1.346245

Fig. 1. Schematic of AlGaN/GaN HEMTs (off-state) and the electric filed distribution. (a) HEMT without passivation (partially depletion). (b) HEMT with PI passivation (partially depletion). (c) HEMT with PI/Cr passivation (partially depletion). (d) The electric filed distribution (breakdown).

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Fig. 2. Comparison of the gate leakage current for the un-passivated AlGaN/GaN HEMTs and passivated AlGaN/GaN HEMTs by PI and PI/Cr thin films.

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Fig. 3. Typical output ($I_{\rm DS}$-$V_{\rm DS})$ characteristics with varying gate biases of (a) un-passivated, (b) PI thin film passivated and (c) PI/Cr thin film passivated AlGaN/GaN HEMTs.

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Fig. 4. Transfer characteristics of the un-passivated AlGaN/GaN HEMTs and AlGaN/GaN HEMTs passivated by PI and PI/Cr thin films at $V_{\rm DS}$ $=$ 10 V.

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Fig. 5. Off-state breakdown voltage of AlGaN/GaN HEMTs with and without passivation at 1 mA/mm.

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Fig. 6. Permittivity of the PI/Cr composite thin films as a function of Cr volume fraction at 10$^{3}$ Hz and room temperature. The inset shows metallic Cr particles in the PI thin films analyzed by energy dispersive X-ray spectroscopy (EDX).

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[1]	Kumar V, Lu W, Schwindt R, et al. AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz. IEEE Electron Device Lett, 2002, 23(8):455 doi: 10.1109/LED.2002.801303
[2]	Wang Zhigang, Chen Wanjun, Zhang Bo, et al. A novel controllable hybrid-anode AlGaN/GaN field-effect rectifier with low operation voltage. Chin Phys Lett, 2012, 29(10):107202 doi: 10.1088/0256-307X/29/10/107202
[3]	Yang Ling, Hao Yue, Ma Xiaohua, et al. Various recipes of SiN_x passivated AlGaN/GaN high electron mobility transistors in correlation with current slump. Chin Phys Lett, 2009, 26(11):117104 doi: 10.1088/0256-307X/26/11/117104
[4]	Cheng Zhiqun, Liu Jie, Zhou Yugang, et al. Broadband microwave noise characteristics of high-linearity composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs. IEEE Electron Device Lett, 2005, 26(8):145
[5]	Xing H, Dora Y, Chini A, et al. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates. IEEE Electron Device Lett, 2004, 25(4):161 doi: 10.1109/LED.2004.824845
[6]	Karmalkar S, Mishra U K. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate. IEEE Electron Device Lett, 2001, 48(8):1515 doi: 10.1109/16.936500
[7]	Zhang N Q, Keller S, Parish G, et al. High breakdown GaN HEMT with overlapping gate structure. IEEE Electron Device Lett, 2000, 21(9):421 doi: 10.1109/55.863096
[8]	Kim Y S, Lim J, Seok O G, et al. High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment. Power Semiconductor Devices and ICs (ISPSD). IEEE 23rd International Symposium, 2011:251 http://ieeexplore.ieee.org/document/5890838/authors
[9]	Song Di, Liu Jie, Cheng Zhiquan, et al. Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse. IEEE Electron Device Lett, 2007, 28:189 doi: 10.1109/LED.2007.891281
[10]	Chen Xingbi. Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity. USA Patent, No. 6936907, 2005, Aug. 30
[11]	Li Junhong, Li Ping, Huo Weirong, et al. Analysis and fabrication of an LDMOS with high-permittivity dielectric. IEEE Electron Device Lett, 2011, 33(9):1266 http://ieeexplore.ieee.org/document/5957260/
[12]	Karmalkar S, Shur M S, Simin G, et al. Field-plate engineering for HFETs. IEEE Electron Device Lett, 2005, 52(12):2534 doi: 10.1109/TED.2005.859568
[13]	Hampson M D, Shen S C, Schwindt R S, et al. Polyimide passivated AlGaN/GaN HFETs with 7.65 W/mm at 18 GHz. IEEE Electron Device Lett, 2004, 25:238 doi: 10.1109/LED.2004.826565
[14]	Tian B, Chen C, Zhang J, et al. Structure and electrical characteristics of AlGaN/GaN MISHFET with Al₂O₃ thin film as both surface passivation and gate dielectric. Semicond Sci Technol, 2011, 26:085023 doi: 10.1088/0268-1242/26/8/085023
[15]	Tan I H, Sinder G L, Hu E L. A self-consistent solution of Schrödinger-Poisson equations using a nonuniform mesh. J Appl Phys, 1990, 68(8):4071 doi: 10.1063/1.346245

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Received: 14 September 2013 Revised: 25 October 2013 Online: Published: 01 March 2014

Article Navigation > Journal of Semiconductors > 2014 > 35(3): 034007

Futong Chu, Chao Chen, Xingzhao Liu. Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation[J]. Journal of Semiconductors, 2014, 35(3): 034007. doi: 10.1088/1674-4926/35/3/034007 ****F T Chu, C Chen, X Z Liu. Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation[J]. J. Semicond., 2014, 35(3): 034007. doi: 10.1088/1674-4926/35/3/034007.

Citation:

F T Chu, C Chen, X Z Liu. Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation[J]. J. Semicond., 2014, 35(3): 034007. doi: 10.1088/1674-4926/35/3/034007.

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Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation

DOI: 10.1088/1674-4926/35/3/034007

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Funds:

the Research Foundation for the Doctoral Program of Higher Education of China 2012018530003

Project supported by the National Natural Science Foundation of China (No. 50932002) and the Research Foundation for the Doctoral Program of Higher Education of China (No. 2012018530003)

the National Natural Science Foundation of China 50932002

More Information

Corresponding author: Chu Futong, Email:cft1228@163.com
Received Date: 2013-09-14
Revised Date: 2013-10-25
Published Date: 2014-03-01

Abstract

Abstract

A novel AlGaN/GaN high electric mobility transistor (HEMT) with polyimide (PI)/chromium (Cr) as the passivation layer is proposed for enhancing breakdown voltage and its DC performance is also investigated. The Cr nanoparticles firstly introduced in PI thin films by the co-evaporation can be used to increase the permittivity of PI film. The high-permittivity PI/Cr passivation acting as field plate can suppress the fringing electric field peak at the drain-side edge of the gate electrode. This mechanism is demonstrated in accord with measured results. The experimental results show that in comparison with the AlGaN/GaN HEMTs without passivation, the breakdown voltage of HEMTs with the PI/Cr composite thin films can be significantly improved, from 122 to 248 V.
- AlGaN/GaN,
- breakdown voltage,
- high-electron-mobility transistors,
- polyimide

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References(15)

References

[1]	Kumar V, Lu W, Schwindt R, et al. AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz. IEEE Electron Device Lett, 2002, 23(8):455 doi: 10.1109/LED.2002.801303
[2]	Wang Zhigang, Chen Wanjun, Zhang Bo, et al. A novel controllable hybrid-anode AlGaN/GaN field-effect rectifier with low operation voltage. Chin Phys Lett, 2012, 29(10):107202 doi: 10.1088/0256-307X/29/10/107202
[3]	Yang Ling, Hao Yue, Ma Xiaohua, et al. Various recipes of SiN_x passivated AlGaN/GaN high electron mobility transistors in correlation with current slump. Chin Phys Lett, 2009, 26(11):117104 doi: 10.1088/0256-307X/26/11/117104
[4]	Cheng Zhiqun, Liu Jie, Zhou Yugang, et al. Broadband microwave noise characteristics of high-linearity composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN HEMTs. IEEE Electron Device Lett, 2005, 26(8):145
[5]	Xing H, Dora Y, Chini A, et al. High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates. IEEE Electron Device Lett, 2004, 25(4):161 doi: 10.1109/LED.2004.824845
[6]	Karmalkar S, Mishra U K. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate. IEEE Electron Device Lett, 2001, 48(8):1515 doi: 10.1109/16.936500
[7]	Zhang N Q, Keller S, Parish G, et al. High breakdown GaN HEMT with overlapping gate structure. IEEE Electron Device Lett, 2000, 21(9):421 doi: 10.1109/55.863096
[8]	Kim Y S, Lim J, Seok O G, et al. High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment. Power Semiconductor Devices and ICs (ISPSD). IEEE 23rd International Symposium, 2011:251 http://ieeexplore.ieee.org/document/5890838/authors
[9]	Song Di, Liu Jie, Cheng Zhiquan, et al. Normally off AlGaN/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse. IEEE Electron Device Lett, 2007, 28:189 doi: 10.1109/LED.2007.891281
[10]	Chen Xingbi. Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity. USA Patent, No. 6936907, 2005, Aug. 30
[11]	Li Junhong, Li Ping, Huo Weirong, et al. Analysis and fabrication of an LDMOS with high-permittivity dielectric. IEEE Electron Device Lett, 2011, 33(9):1266 http://ieeexplore.ieee.org/document/5957260/
[12]	Karmalkar S, Shur M S, Simin G, et al. Field-plate engineering for HFETs. IEEE Electron Device Lett, 2005, 52(12):2534 doi: 10.1109/TED.2005.859568
[13]	Hampson M D, Shen S C, Schwindt R S, et al. Polyimide passivated AlGaN/GaN HFETs with 7.65 W/mm at 18 GHz. IEEE Electron Device Lett, 2004, 25:238 doi: 10.1109/LED.2004.826565
[14]	Tian B, Chen C, Zhang J, et al. Structure and electrical characteristics of AlGaN/GaN MISHFET with Al₂O₃ thin film as both surface passivation and gate dielectric. Semicond Sci Technol, 2011, 26:085023 doi: 10.1088/0268-1242/26/8/085023
[15]	Tan I H, Sinder G L, Hu E L. A self-consistent solution of Schrödinger-Poisson equations using a nonuniform mesh. J Appl Phys, 1990, 68(8):4071 doi: 10.1063/1.346245

Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation

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