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J. Semicond. > 2014, Volume 35 > Issue 8 > 084009

SEMICONDUCTOR DEVICES

Development of Raman acousto-optic frequency shifter based on SAW

Chunmei Wang1, 2, 3, , Zhiyu Wen1, 2, 3, Zuwei Zhang1, 2, 3 and Yingyi Zhang1, 2, 3

+ Author Affiliations

 Corresponding author: Wang Chunmei, Email:wangchunmei78@163.com

DOI: 10.1088/1674-4926/35/8/084009

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Abstract: A Raman acousto-optic frequency shifter (AOFS) based on surface acoustic wave (SAW) is presented. It consists of a double-ended SAW resonator and optical waveguide system. The structure parameters of the SAW resonator are optimized using COM software and the optical waveguide system is designed using an effective index method. The AOFS prototype fabricated using MEMS technology is detected. The optical beat signals superimposed by ±1st-order and ±2nd-order diffracted beams are detected. The frequency shift of 78.2201 MHz related to the 1st-order diffracted beams and 156.2306 MHz related to the 2nd-order diffracted beams are obtained respectively.

Key words: SAWRamanAOFSfrequency shift

Acousto-optic devices are a large class of new devices that are developing rapidly. They can rapidly and effectively control various properties of the laser, such as frequency, intensity and propagation direction[1, 2]. They can also rapidly complete transfer and conversion among electric, acoustic and light information to achieve automatic frequency selection, spectroscopy and scanning of the light beam. Nowadays they are widely used in mobile communication, radar, satellite and remote sensing and control systems[3]. An acousto-optic frequency shifter (AOFS) is an acousto-optic device to modulate laser frequency[4, 5]. It can be divided into Raman-type and Bragg-type. Most of the reported Raman AOFSs are developed based on bulk wave, while devices based on SAW have been rarely reported. The combination of acousto-optic devices with SAW technology has many advantages, such as small size, light weight, and easy integration[6-8].

In this paper, an SAW Raman AOFS is presented, which consists of a double-ended SAW resonator and an optical waveguide system. The structure parameters of the SAW resonator are optimized by simulation. The optical waveguide system, including a single-mode rectangular waveguide, tapered optical waveguide and waveguide reflector, is designed. The principle prototype is fabricated and detected. The frequency shift of 78 MHz related to the 1st-order diffracted beams and 156 MHz related to the 2nd-order diffracted beams are obtained respectively.

According to the characteristic of the Raman-Nath diffraction, the incident beam must be perpendicular to the propagation direction of SAW. The zero-order diffracted beam doesn't change propagation direction while the ±mth-order diffracted beams distribute symmetrically at both sides of the zero-order diffracted beam[9]. Taking θm and fm as the diffraction angle and the frequency of mth-order diffracted beams respectively, they can be expressed as follows[10]:

sinθm=±mkaki=±mλiλa,m=0,±1,±2,,k=2π/λ,

(1)

fm=fi+mfa,m=0,±1,±2,.

(2)

In Eq. (1), ka and ki are acoustic wave vector and incident light wave vector respectively. λa and λi are acoustic wavelength and incident light wavelength respectively. In Eq. (2), fi and fa are the frequency of incident light and acoustic wave respectively. Equation (2) shows that the frequency of the diffracted light is shifted m times of the acoustic wave frequency. When the ±mth-order diffracted beams are superimposed to generate optical beat signals, the optical beat frequency will be 2mfa. Direct detection of the optical beat signal can determine whether the Raman AOFS works and get the frequency shift of the diffracted light.

The structure of the SAW Raman AOFS is shown in Fig. 1. It mainly consists of a double-ended SAW resonator and an optical waveguide system. The double-ended SAW resonator consists of two interdigital transducers (IDT) and two groups of reflector gratings deposited on quartz substrate. The optical waveguide system includes a tapered optical waveguide, single-mode rectangular waveguides and the waveguide reflector. The incident beam is guided perpendicularly along the propagation direction of SAW into the acoustic field generated by the SAW resonator. The Raman-Nath acousto-optic diffraction occurs in the region of the tapered waveguide[4]. To facilitate the detection of the AOFS, two rectangular waveguides are designed at the end of the tapered waveguide. Thus the ±mth-order diffracted beams can be extracted respectively and superimposed to generate optical beat signals at the output. The optical beat signal is detected by the photoelectric detector and the optical beat frequency can be obtained. The frequency shift of the AOFS can be translated by converting the optical beat frequency.

Figure  1.  Schematic diagram of SAW Raman AOFS.

The Klein-Cook parameter QC is used to distinguish the two acousto-optic interaction regimes and it can be expressed as[11]:

QC=2πWIλinλ2a,

(3)

where n is the reflection index of medium, and WI is the acousto-optic interaction length. When the acoustic wave is excited by the SAW resonator, WI is the IDT aperture and λa is equivalent to the IDT period. The requirement of the Raman-Nath diffraction is QC<1[12]. The incident light wavelength λi is determined as 808 nm by the semiconductor laser. The reflection index n of medium is 1.67 determined by the SiO2 waveguide. To meet the requirement of the Raman-Nath diffraction, the IDT period and aperture are designed to be 40 μm and 500 μm respectively.

Using COM software provided by Professor Hashimoto in Chiba University, S12 curve of the SAW resonator can be simulated and the structure parameters can be optimized[13]. Figure 2 shows the simulated relationships of the insertion loss and the Q value with the IDT pair number. Considering the insertion loss, the Q value and the overall size of the device, the IDT pair number is designed to be 100. A series of S12 curves are simulated when the other structure parameters vary, including the Al electrode thickness, the grating period, the IDT gap and the gap between IDT and grating, as shown in Figs. 3-6 respectively. Comparing the S12 curves, the structure parameters of the SAW resonator can be determined in Table 1 by minimizing the insertion loss. The simulated center frequency, Q value and the insertion loss are 78.028 MHz, 10428 and -6.153 dB respectively.

Figure  2.  Relationship of the insertion loss and the Q value with IDT pair numbers.
Figure  3.  (Color online) Relationship of the insertion loss with Al thicknesses.
Figure  4.  (Color online) Relationship of the insertion loss with grating periods.
Figure  5.  (Color online) Relationship of the insertion loss with IDT gaps.
Figure  6.  (Color online) Relationship of the insertion loss with gaps between IDT and grating.
Table  1.  Parameters designed of the SAW resonator.
DownLoad: CSV  | Show Table

The incident beam guided by the single-mode rectangular optical waveguide propagates into the SAW resonator and the acousto-optic interaction occurs in the resonant cavity. According to the characteristics of the Raman-Nath diffraction, the diffracted beams will be symmetrical at both sides of the incident axial[14]. Thus the waveguide in the acousto-optic interaction area should be tapered, as shown in Fig. 7. Because of the extremely weak intensity, the ±mth-order (m 3) diffracted beams are ignored in this paper. So the cone angle of the tapered waveguide is designed as the diffraction angle of +2nd-order diffracted beams. The θ2=2.3 can be obtained according to Eq. (1). To separate the diffracted beams from each other for easy extraction, the length of the tapered optical waveguide is designed to be 1000 μm and the separation between the spot centers of different order diffracted beams is about 20 μm. In this case, the ±mth-order diffracted beams can be easily extracted by the two single-mode rectangular waveguides designed at the end of the tapered waveguide.

Figure  7.  Schematic of the tapered waveguide for collecting (a) the ±1st-order and (b) the ±2nd-order diffracted beams.

To avoid unexpected diffracted beams propagating into the single-mode rectangular waveguide, the waveguide reflector is designed between the two single-mode rectangular waveguides at the end of the tapered waveguide, as shown in Fig. 7(b). A magnetron sputtering Al thin film is grown in the triangular shaded region to cover the step. The interface between the step profile and the Al thin film works as the reflector. For the extraction of the ±1st-order diffracted beams, the 0-order diffracted beam is reflected by the waveguide reflector while the ±2-order diffracted beams propagate directly out the waveguide, as shown in Fig. 7(a). For the extraction of the ±2nd-order diffracted beams, only the ±2nd-order diffracted beams can enter into the single-mode rectangular waveguide while the 0-order and ±1st-order diffracted beams are reflected by the reflector.

The single-mode rectangular waveguide is formed by SiO2 films with different reflection indexes[15]. By using an effective index method, the thickness and the width of the waveguide core layer are designed as 0.8 μm and 2 μm respectively. To make sure that the light in the waveguide has the same polarization state, an Al film with a thickness of 0.4 μm and length of 400 μm is designed to coat the upper surface of the core layer to form the Ey00 mode polarizer according to the large difference transmission loss between the different polarization modes[16].

The fabrication process of the SAW Raman AOFS is presented as shown in Fig. 8. Firstly, a 0.8 μm-thickness Al film is deposited on a 500 μm-thickness ST-cut quartz wafer by evaporation coating method. Then the IDTs are fabricated by wet etching with buffered phosphate solution, as shown in Fig. 8(a). Secondly, 1 μm-thickness SiO2 film with a reflection index of 1.65 and another 0.8 μm-thickness SiO2 film with a reflection index of 1.67 are deposited as the waveguide substrate and the waveguide core respectively by using the plasma-enhanced chemical vapor deposition (PECVD) method, as shown in Fig. 8(b). Thirdly, by using the lift-off process, an Al film is deposited and patterned as the masks for dry etching in the next step, as shown in Fig. 8(c). Fourthly, a 0.8 μm-deep reactive ion etching (RIE) is applied to fabricate the SiO2 waveguide core layer. Most of the Al masks are removed by wet etching with phosphate buffer solution, but some of them are retained as the polarizer, as shown in Fig. 8(d). Fifthly, the waveguide reflector is fabricated by using the lift-off process, as shown in Fig. 8(e). Sixthly, 1 μm-thickness SiO2 thin film with a reflection index of 1.65 is deposited as the waveguide cladding using PECVD and the RIE process is applied to expose the electrodes, as shown in Fig. 8(f). The SEM picture of the chip package is shown in Fig. 9. The overall size of the device is 30 × 15 × 0.2 mm3 and the quality is 238.59 mg.

Figure  8.  Fabrication process of the SAW Raman AOFS.
Figure  9.  SEM picture of the SAW Raman AOFS fabricated.

The experiment system, as shown in Figs. 10 and 11, is built to detect the performance of the SAW Raman AOFS. The laser beams are focused by the telephoto lens and coupled into the waveguide of the SAW Raman AOFS. The SAW is excited when the AOFS is driven and the acousto-optic interaction occurs in the resonant cavity. The ±mth-order diffracted beams are superimposed to generate optical beat signals and output. The output beams are collimated by the short-focus lens and focused by the telephoto lens. The optical beat signals are converted to electric signals by the photoelectric detector, and finally the electric signals are detected by the spectrum analyzer.

Figure  10.  Schematic of the detection system.
Figure  11.  Photograph of the detection platform.

The SAW resonator is detected firstly with a vector network analyzer before the detection of the AOFS, as shown in Fig. 12. The detected results show that the center frequency of the SAW resonator is 78.3480 MHz, insert loss is -11.273 dB and the Q value is 6465.7. Compared with the simulation results, the insertion loss significantly increases and the Q value significantly reduces. The measured value of the center frequency is close to the design value and the relative error is 0.4%. The insertion loss tested is approximately twice that of the design value and the relative error is 61%. The relative error of the Q value is 45%. This is mainly because of material defects and processing errors. These impact factors on the performance have been fully taken into account when we design the device. The insertion loss of the SAW resonator is designed to be sufficiently small and the Q value is designed to be large enough. Therefore, the SAW resonator fabricated can meet the performance requirements of practical use.

Figure  12.  Detected result of the SAW resonator.

The output signals of the photoelectric detector are shown in Figs. 13 and 14. Figure 13 is the electric signal converted from the optical beat signal superimposed by the ±1st-order diffracted beams. The peak frequency is 156.4402 MHz. Figure 14 is the electric signal converted from the optical beat signal superimposed by the ±2nd-order diffracted beams. The peak frequency is 312.4612 MHz. The results show that the SAW Raman AOFS works normally and the optical beat signals superimposed by ±1st-order and ±2nd-order diffracted beams can be extracted. So the design of the AOFS is feasible. When the drive power is 100 MW, the frequency shift related to the 1st-order diffracted beams is 78.2201 MHz and the relative error with the theoretical value is 0.1635%, as shown in Table 1. The frequency shift related to the 2nd-order diffracted beams is 156.2306 MHz and the relative error with the theoretical value is 0.2979%, as shown in Table 1. The maximum diffraction efficiency tested of the AOFS is 3.02%.

Figure  13.  Output electric signal of the photoelectric detector superimposed by the ±1st-order diffracted beams.
Figure  14.  Output electric signal of the photoelectric detector superimposed by the ±2nd-order diffracted beams.

Compared with the reported Raman AOFS based on bulk wave, this Raman AOFS is developed utilizing the SAW technology and has advantages of smaller size, lighter weight and lower driving power. It provides some potential applications in the fields of integrated optics, laser communication, optic gyroscope, and so on.

Table  2.  Performance parameters of the SAW AOFS.
DownLoad: CSV  | Show Table

In this paper, an SAW Raman AOFS is developed. It is constituted by a double-ended SAW resonator and optical waveguide system. The structure parameters of the SAW resonator are optimized using COM software. This design method includes the effect of the reflection of SAW, so it can simulate the performance of the SAW device more accurately. The optical waveguide system includes a single-mode rectangular waveguide, tapered optical waveguide and waveguide reflector. The tapered optical waveguide is designed according to the characteristic of Raman-Nath diffraction. The single-mode rectangular waveguide is designed using the effective index method. The principle prototype of the AOFS is fabricated using MEMS processing technology and the optical beat signals superimposed by ±1st-order and ±2nd-order diffracted beams are detected respectively. The frequency shift related to the 1st-order diffracted beams is 78.2201 MHz and the relative error with the theoretical value is 0.1635%. The frequency shift related to the 2nd-order diffracted beams is 156.2306 MHz and the relative error with the theoretical value is 0.2979%. The tested data shows that the error of the SAW AOFS designed is relatively small compared to the theoretical value. Thereby the design of the AOFS is feasible and this paper provides a reference for the development of the SAW Raman-type acousto-optic device.



[1]
Zhang N. Theory and technique research of ZnO surface acoustic wave and silicon-based SiO2 optical wave-guide acoustic-optical frequency shifter. Changchun: Changchun University of Technology, 2009
[2]
Greenhalgh P A, Foord A P, Davies P A. All fiber frequency shifter using piezoceramic SAW device. Electron Lett, 1989, 25(18):1206 doi: 10.1049/el:19890809
[3]
Wang T Z H. Based on the silicon-based wave-guide and acousto-optic frequency shifter that the research of the theory and technology. Changchun: Changchun University of Technology, 2010
[4]
Chen S T, Cheng Z Y. Baseband integrated acousto-optic frequency shifter/modulator module for fiber optic at 1.3μm. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 1993, 40(4):407 doi: 10.1109/58.251290
[5]
Cheng Z Y, Chen S T. A novel integrated acousto-optic frequency shifter. J Lightwave Technol, 1989, 7(10):1575 doi: 10.1109/50.39100
[6]
Kakio S, Kitamura M, Nakagawa Y. Waveguide-type acousto-optic frequency shifter with high diffraction efficiency driven by surface acoustic waves and its application to frequency shifted feedback fiber laser. Ultrasonics Symposium, 2003 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1418295
[7]
Kakio S, Uotani S, Nakagawa Y. Waveguide-type acousto-optic frequency shifter with high diffraction efficiency driven by surface acoustic waves. Joint 50th Anniversary Conference International Ultrasonics, Ferroelectrics, and Frequency Control, 2004 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1418295
[8]
Kakio S, Uotani S, Nakagawa Y. Monolithically integrated tandem waveguide-type acousto-optic frequency shifter driven by surface acoustic waves. IEEE Ultrasonics Symposium, 2006 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4151929
[9]
Liu H X, Gai L, Liu G J. The principle of acousto-optic diffraction and experimental research. Laboratory Research and Exploration, 2009, 28(1):56 http://en.cnki.com.cn/article_en/cjfdtotal-sysy200901021.htm
[10]
Zhang Y J. Theoretical and experimental research on the photo-electronic integrated acceleration seismic geophone. Tianjin: Tianjin University, 2006
[11]
Wu Y Q, Shankar P P M. A fiber optic ultrasonic sensor using Raman-Nath light diffraction. Ferroelectrics and Frequency Control, 1994, 41(2):166 doi: 10.1109/58.279129
[12]
Tang T T, Wang Z H. Integrated optics. Beijing:Science and Technology Press, 2005:51
[13]
Hashimoto K Y. Surface acoustic wave devices in telecommunication modeling and simulation. Beijing:National Defense Industry Press, 2002:232
[14]
Zhang H F, Hu G H. Experimental investigation of acousto-optic effect. Journal of Shandong University of Technology, 2008, 22(1):52 http://en.cnki.com.cn/Article_en/CJFDTOTAL-SDGC200801016.htm
[15]
Fang J X, Cao Z H Q, Yang F Z. The light wave-guide physical basis. Shanghai:Shanghai Jiao Tong University Press, 1987:51
[16]
Suematsu Y, Hakuta M, Furuya K, et al. Fundamental transverse electric field (TE0) mode selection for thin-film asymmetry light guides. Appl Phys Lett, 1972, 21:291 doi: 10.1063/1.1654383
Fig. 1.  Schematic diagram of SAW Raman AOFS.

Fig. 2.  Relationship of the insertion loss and the Q value with IDT pair numbers.

Fig. 3.  (Color online) Relationship of the insertion loss with Al thicknesses.

Fig. 4.  (Color online) Relationship of the insertion loss with grating periods.

Fig. 5.  (Color online) Relationship of the insertion loss with IDT gaps.

Fig. 6.  (Color online) Relationship of the insertion loss with gaps between IDT and grating.

Fig. 7.  Schematic of the tapered waveguide for collecting (a) the ±1st-order and (b) the ±2nd-order diffracted beams.

Fig. 8.  Fabrication process of the SAW Raman AOFS.

Fig. 9.  SEM picture of the SAW Raman AOFS fabricated.

Fig. 10.  Schematic of the detection system.

Fig. 11.  Photograph of the detection platform.

Fig. 12.  Detected result of the SAW resonator.

Fig. 13.  Output electric signal of the photoelectric detector superimposed by the ±1st-order diffracted beams.

Fig. 14.  Output electric signal of the photoelectric detector superimposed by the ±2nd-order diffracted beams.

Table 1.   Parameters designed of the SAW resonator.

Table 2.   Performance parameters of the SAW AOFS.

[1]
Zhang N. Theory and technique research of ZnO surface acoustic wave and silicon-based SiO2 optical wave-guide acoustic-optical frequency shifter. Changchun: Changchun University of Technology, 2009
[2]
Greenhalgh P A, Foord A P, Davies P A. All fiber frequency shifter using piezoceramic SAW device. Electron Lett, 1989, 25(18):1206 doi: 10.1049/el:19890809
[3]
Wang T Z H. Based on the silicon-based wave-guide and acousto-optic frequency shifter that the research of the theory and technology. Changchun: Changchun University of Technology, 2010
[4]
Chen S T, Cheng Z Y. Baseband integrated acousto-optic frequency shifter/modulator module for fiber optic at 1.3μm. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 1993, 40(4):407 doi: 10.1109/58.251290
[5]
Cheng Z Y, Chen S T. A novel integrated acousto-optic frequency shifter. J Lightwave Technol, 1989, 7(10):1575 doi: 10.1109/50.39100
[6]
Kakio S, Kitamura M, Nakagawa Y. Waveguide-type acousto-optic frequency shifter with high diffraction efficiency driven by surface acoustic waves and its application to frequency shifted feedback fiber laser. Ultrasonics Symposium, 2003 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1418295
[7]
Kakio S, Uotani S, Nakagawa Y. Waveguide-type acousto-optic frequency shifter with high diffraction efficiency driven by surface acoustic waves. Joint 50th Anniversary Conference International Ultrasonics, Ferroelectrics, and Frequency Control, 2004 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1418295
[8]
Kakio S, Uotani S, Nakagawa Y. Monolithically integrated tandem waveguide-type acousto-optic frequency shifter driven by surface acoustic waves. IEEE Ultrasonics Symposium, 2006 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4151929
[9]
Liu H X, Gai L, Liu G J. The principle of acousto-optic diffraction and experimental research. Laboratory Research and Exploration, 2009, 28(1):56 http://en.cnki.com.cn/article_en/cjfdtotal-sysy200901021.htm
[10]
Zhang Y J. Theoretical and experimental research on the photo-electronic integrated acceleration seismic geophone. Tianjin: Tianjin University, 2006
[11]
Wu Y Q, Shankar P P M. A fiber optic ultrasonic sensor using Raman-Nath light diffraction. Ferroelectrics and Frequency Control, 1994, 41(2):166 doi: 10.1109/58.279129
[12]
Tang T T, Wang Z H. Integrated optics. Beijing:Science and Technology Press, 2005:51
[13]
Hashimoto K Y. Surface acoustic wave devices in telecommunication modeling and simulation. Beijing:National Defense Industry Press, 2002:232
[14]
Zhang H F, Hu G H. Experimental investigation of acousto-optic effect. Journal of Shandong University of Technology, 2008, 22(1):52 http://en.cnki.com.cn/Article_en/CJFDTOTAL-SDGC200801016.htm
[15]
Fang J X, Cao Z H Q, Yang F Z. The light wave-guide physical basis. Shanghai:Shanghai Jiao Tong University Press, 1987:51
[16]
Suematsu Y, Hakuta M, Furuya K, et al. Fundamental transverse electric field (TE0) mode selection for thin-film asymmetry light guides. Appl Phys Lett, 1972, 21:291 doi: 10.1063/1.1654383
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    Chunmei Wang, Zhiyu Wen, Zuwei Zhang, Yingyi Zhang. Development of Raman acousto-optic frequency shifter based on SAW[J]. Journal of Semiconductors, 2014, 35(8): 084009. doi: 10.1088/1674-4926/35/8/084009
    C M Wang, Z Y Wen, Z W Zhang, Y Y Zhang. Development of Raman acousto-optic frequency shifter based on SAW[J]. J. Semicond., 2014, 35(8): 084009. doi: 10.1088/1674-4926/35/8/084009.
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    Received: 16 October 2013 Revised: 04 March 2014 Online: Published: 01 August 2014

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      Chunmei Wang, Zhiyu Wen, Zuwei Zhang, Yingyi Zhang. Development of Raman acousto-optic frequency shifter based on SAW[J]. Journal of Semiconductors, 2014, 35(8): 084009. doi: 10.1088/1674-4926/35/8/084009 ****C M Wang, Z Y Wen, Z W Zhang, Y Y Zhang. Development of Raman acousto-optic frequency shifter based on SAW[J]. J. Semicond., 2014, 35(8): 084009. doi: 10.1088/1674-4926/35/8/084009.
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      Chunmei Wang, Zhiyu Wen, Zuwei Zhang, Yingyi Zhang. Development of Raman acousto-optic frequency shifter based on SAW[J]. Journal of Semiconductors, 2014, 35(8): 084009. doi: 10.1088/1674-4926/35/8/084009 ****
      C M Wang, Z Y Wen, Z W Zhang, Y Y Zhang. Development of Raman acousto-optic frequency shifter based on SAW[J]. J. Semicond., 2014, 35(8): 084009. doi: 10.1088/1674-4926/35/8/084009.

      Development of Raman acousto-optic frequency shifter based on SAW

      DOI: 10.1088/1674-4926/35/8/084009
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      • Corresponding author: Wang Chunmei, Email:wangchunmei78@163.com
      • Received Date: 2013-10-16
      • Revised Date: 2014-03-04
      • Published Date: 2014-08-01

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