J. Semicond. > 2015, Volume 36 > Issue 12 > 124004
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SEMICONDUCTOR DEVICES

An insulated gate bipolar transistor with surface n-type barrier

Mengxuan Jiang1, , Z. John Shen1, Jun Wang1, Zhikang Shuai1, Xin Yin1, Bingbing Sun2 and Linyuan Liao1

+ Author Affiliations

 Corresponding author: Jiang Mengxuan,Email:mxuanjiang@gmail.com

DOI: 10.1088/1674-4926/36/12/124004

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Abstract: This letter proposes a novel IGBT structure with an n-type barrier(NB-IGBT) formed on the silicon surface to enhance the conductivity modulation effect with a relatively simple fabrication process. TCAD simulation indicates that the NB-IGBT offers a current density 49% higher and turn-off losses 25% lower than a conventional field-stop IGBT(FS-IGBT) with a similar breakdown voltage, turn-off time and avalanche energy. Furthermore, the NB-IGBT exhibits extremely large transconductance, which is favorable to turn-on and turn-off. Therefore, the proposed IGBT offers an attractive option for high-voltage and large-power electronics applications.

Key words: breakdown voltage, conductivity modulation, current density, latch up, IGBT



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Fig1.  (a) Proposed and (b) conventional FS-IGBT structures.

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Fig2.  (Color online) Avalanche $I$--$V$ characteristics of the proposed IGBT with the n-type barrier region. The simulation result of conventional FS-IGBT with the same cell dimensions is included for comparison.

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Fig3.  Potential distribution along the vertical direction between the emitter metal,the n+source,the p-base,and part of the n-drift region under the avalanche conditions.

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Fig4.  Forward $I$--$V$ characteristics of the proposed IGBT with the n-type barrier region. The simulation result of conventional FS-IGBT with the same cell dimensions is included for comparison.

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Fig5.  Excess carrier distribution along the vertical direction of the proposed IGBT with the n-type barrier region. The simulation result of conventional FS-IGBT with the same cell dimensions is included for comparison.

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Fig6.  Potential distribution along the vertical direction between the emitter metal,the n+source,the p-base,and part of the n-drift region at collector current of 150 A/cm$^2$. The simulation result of conventional FS-IGBT with the same cell dimensions is included for comparison.

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Fig7.  Transfer characteristics of the proposed IGBT with the n-type barrier region at a collector voltage of 1.64 V. The simulation result of conventional FS-IGBT with the same cell dimensions is included for comparison.

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Fig8.  Saturation current waveforms of the proposed IGBT with the n-type barrier region at gate voltage of 15 V. The simulation result of conventional FS-IGBT with the same cell dimensions is included for comparison.

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Fig9.  Turn-off test circuit,the DC bus voltage is set at 600 V,the gate voltage is set at $\pm$15 V,the load current density at 150 A/cm$^2$ and the stray inductance at 60 nH and the gate resistor at 5 Ω.

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Fig10.  (Color online) Turn-off waveforms of the proposed IGBT and FS-IGBT at current density of 150 A/cm$^2$,bus voltage of 600 V,gate resistor of 5 Ω and stray inductance of 60 nH.

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Fig11.  (Color online) Unclamped inductive switching waveforms of the proposed IGBT and FS-IGBT at current density of 150 A/cm$^2$,bus voltage of 600 V,gate resistor of 5 $\upOmega $ and the maximum load inductance of 0.3 mH.

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Fig12.  Turn-off losses characteristics of the proposed IGBT and FS-IGBT by varying p+collector concentration at current density of 150 A/cm$^2$,bus voltage of 600 V,gate resistor of 5 Ω and stray inductance of 60 nH.

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Table 1.   Major structural parameters.

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    Received: 04 August 2015 Revised: Online: Published: 01 December 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(12): 124004
      Mengxuan Jiang, Z. John Shen, Jun Wang, Zhikang Shuai, Xin Yin, Bingbing Sun, Linyuan Liao. An insulated gate bipolar transistor with surface n-type barrier[J]. Journal of Semiconductors, 2015, 36(12): 124004. doi: 10.1088/1674-4926/36/12/124004 ****M X Jiang, Z. John Shen, J Wang, Z K Shuai, X Yin, B B Sun, L Y Liao. An insulated gate bipolar transistor with surface n-type barrier[J]. J. Semicond., 2015, 36(12): 124004. doi: 10.1088/1674-4926/36/12/124004.
      Citation:
      Mengxuan Jiang, Z. John Shen, Jun Wang, Zhikang Shuai, Xin Yin, Bingbing Sun, Linyuan Liao. An insulated gate bipolar transistor with surface n-type barrier[J]. Journal of Semiconductors, 2015, 36(12): 124004. doi: 10.1088/1674-4926/36/12/124004 ****
      M X Jiang, Z. John Shen, J Wang, Z K Shuai, X Yin, B B Sun, L Y Liao. An insulated gate bipolar transistor with surface n-type barrier[J]. J. Semicond., 2015, 36(12): 124004. doi: 10.1088/1674-4926/36/12/124004.
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      An insulated gate bipolar transistor with surface n-type barrier

      DOI: 10.1088/1674-4926/36/12/124004

      Funds:

      Project supported by the National High Technology Research and Development Program of China(No. 2014AA052601) and the National Natural Science Foundation of China(No. 51277060).

      More Information
      • Corresponding author: Jiang Mengxuan,Email:mxuanjiang@gmail.com
      • Received Date: 2015-08-04
      • Accepted Date: 2015-09-24
      • Published Date: 2015-01-25

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