Fig. 1.
A schematic diagram of the energy band structure for a negative dipole formation in a high-$k$/SiO$_{2}$ system.
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| Citation: |
Kai Han, Xiaolei Wang, Hong Yang, Wenwu Wang. Electric dipole formation at high-k dielectric/SiO2 interface[J]. Journal of Semiconductors, 2015, 36(3): 036004. doi: 10.1088/1674-4926/36/3/036004
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K Han, X L Wang, H Yang, W W Wang. Electric dipole formation at high-k dielectric/SiO2 interface[J]. J. Semicond., 2015, 36(3): 036004. doi: 10.1088/1674-4926/36/3/036004.
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Electric dipole formation at high-k dielectric/SiO2 interface
DOI: 10.1088/1674-4926/36/3/036004
More Information
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Abstract
The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states (DCIGS). The charge neutrality level (CNL) of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths of high-k/SiO2 systems based on this model are in good agreement with the experimental data.-
Keywords:
- high-k dielectric,
- band alignment,
- interface dipole
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References
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