Fig. 1.
(a) The AlGaN/GaN based inverted HEMT structure. (b) The AlGaN/GaN based RTD structure.
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| Citation: |
Subhra Chowdhury, Swarnabha Chattaraj, Dhrubes Biswas. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate[J]. Journal of Semiconductors, 2015, 36(4): 044001. doi: 10.1088/1674-4926/36/4/044001
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S Chowdhury, S Chattaraj, D Biswas. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate[J]. J. Semicond., 2015, 36(4): 044001. doi: 10.1088/1674-4926/36/4/044001.
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Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate
DOI: 10.1088/1674-4926/36/4/044001
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Abstract
For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current-voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.-
Keywords:
- RTD,
- HEMT,
- RTHEMT,
- current-voltage characteristics
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] -
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