Top gate ZnO-Al<sub>2</sub>O<sub>3</sub> thin film transistors fabricated using a chemical bath deposition technique

Paragjyoti Gogoi; Rajib Saikia; Sanjib Changmai

doi:10.1088/1674-4926/36/4/044002

J. Semicond. > 2015, Volume 36 > Issue 4 > 044002

SEMICONDUCTOR DEVICES

Top gate ZnO-Al₂O₃ thin film transistors fabricated using a chemical bath deposition technique

Paragjyoti Gogoi, Rajib Saikia and Sanjib Changmai

+ Author Affiliations

Corresponding author: Paragjyoti Gogoi, E-mail: paragjyoti_g@rediffmail.com

DOI: 10.1088/1674-4926/36/4/044002

Abstract: ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl₂ and NH₃ on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al₂O₃ as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 ℃ for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm²/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 10⁶, respectively.

Key words: chemical bath deposition, thin film transistors, electrical properties

References

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Fig. 1. The schematic structure of the top gate coplanar electrode structure of the TFTs.

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Fig. 2. XRD spectrum of the ZnO thin film.

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Fig. 3. An SEM image of the ZnO thin film annealed at 500 C.

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Fig. 4. $I_{\rm D}$-$V_{\rm D}$ characteristics of the ZnO TFTs at constant $V_{\rm G}$.

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Fig. 5. $I_{\rm D}^{1/2}$ -$V_{\rm G}$ plots for ZnO TFTs at a constant drain voltage $V_{\rm D}$ $=$ 8 V.

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Fig. 6. Plot of lg $I_{\rm D}$-$V_{\rm G}$ at a constant drain voltage $V_{\rm D}$ $=$ 8 V.

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Table 1. Measured values of mobility ($\mu_{\rm FET})$, threshold voltage ($V_{\rm T})$, ON-OFF ratio and sub-threshold swing of the fabricated devices and comparison of these parameters with some previous results^{[1, 3, 4]} with different gate dielectrics and methods of preparation.

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Received: 14 August 2014 Revised: Online: Published: 01 April 2015

ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl₂ and NH₃ on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al₂O₃ as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 ℃ for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm²/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 10⁶, respectively.

Top gate ZnO-Al₂O₃ thin film transistors fabricated using a chemical bath deposition technique

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Top gate ZnO-Al₂O₃ thin film transistors fabricated using a chemical bath deposition technique

Top gate ZnO-Al₂O₃ thin film transistors fabricated using a chemical bath deposition technique