Fig. 1.
The schematic structure of the InGaAsP/ InGaAs DJ solar cell.
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| Citation: |
Yongming Zhao, Jianrong Dong, Kuilong Li, Yurun Sun, Xulu Zeng, Yang He, Shuzhen Yu, Hui Yang. InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J]. Journal of Semiconductors, 2015, 36(4): 044011. doi: 10.1088/1674-4926/36/4/044011
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Y M Zhao, J R Dong, K L Li, Y R Sun, X L Zeng, Y He, S Z Yu, H Yang. InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J]. J. Semicond., 2015, 36(4): 044011. doi: 10.1088/1674-4926/36/4/044011.
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InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells
DOI: 10.1088/1674-4926/36/4/044011
More Information
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Abstract
Lattice-matched InGaAs(P) photovoltaic devices were grown on InP substrates by metal-organic chemical vapor deposition. InGaAsP/InGaAs (1.07/0.74 eV) dual-junction (DJ) solar cells were fabricated and characterized by quantum efficiency and I-V measurements. The open circuit voltage, short circuit current density, fill factor, and efficiency of InGaAsP/InGaAs DJ solar cell are 0.977 V, 10.2 mA/cm2, 80.8%, and 8.94%, respectively, under one sun illumination of the AM 1.5D spectrum. For the InGaAsP/InGaAs DJ solar cell, with increasing concentration, the conversion efficiency first increases steadily and reaches 13% around 280 suns, and finally decreases due to the drop in fill factor at higher concentration ratios. These experimental results demonstrate the promising prospect of GaInP/GaAs/InGaAsP/InGaAs four-junction solar cells.-
Keywords:
- lattice-matched,
- InGaAs(P) solar cells,
- MOCVD
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References
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