J. Semicond. > 2015, Volume 36 > Issue 7 > 073001
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SEMICONDUCTOR MATERIALS

Growth-temperature-dependent optical and acetone detection properties of ZnO thin films

P. S. Shewale and Y. S. Yu

+ Author Affiliations

 Corresponding author: Y. S. Yu, E-mail: Y. S. Yu: ysyu@deu.ac.kr

DOI: 10.1088/1674-4926/36/7/073001

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Abstract: Zinc oxide (ZnO) thin films were prepared onto glass substrates at moderately low growth temperature by two-stage spray pyrolysis technique. The effects of growth temperature on structural, optical and acetone detection properties were investigated with X-ray diffractometry, a UV-visible spectrophotometer, photoluminescence (PL) spectroscopy and a homemade gas sensor testing unit, respectively. All the films are polycrystalline with a hexagonal wurtzite phase and exhibit a preferential orientation along [002] direction. The film crystallinity is gradually enhanced with an increase in growth temperature. The optical measurements show that all the films are physically highly transparent with a transmittance greater than 82% in the visible range. The band gap of the film is observed to exhibit a slight red shift with an increasing growth temperature. The PL studies on the films show UV/violet PL band at ～ 395 nm. Among all the films investigated, the film deposited at 250 ℃ demonstrates a maximum sensitivity of 13% towards 20 ppm of acetone vapors at 300 ℃ operating temperature.

Key words: ZnO thin film, growth temperature, optical, acetone sensing properties



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Fig. 1.  Evolution of FWHM of the ZnO thin film with its growth temperature. Inset shows a typical XRD pattern of T$_{\rm S3}$ film.

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Fig. 2.  (Color online) Optical transmission spectra of ZnO thin films grown at different growth temperatures. Inset shows corresponding plot of ($\alpha h \nu)^{2}$ versus $h \nu$.

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Fig. 3.  Room temperature PL spectra of ZnO thin films prepared at different growth temperatures.

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Fig. 4.  A typical room temperature PL spectrum of T$_{\rm S1}$ sample resolved by applying Gaussian fitting.

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Fig. 5.  Variation of sensitivity of T$_{\rm S1}$, T$_{\rm S2}$ and T$_{\rm S3}$ samples as a function of time for 20 ppm acetone vapor exposure and removal.

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Fig. 6.  A schematic diagram of the proposed reaction mechanism of a ZnO thin film based sensor to acetone (a) in ambient air and (b) in acetone.

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Fig. 7.  Sensitivity and selectivity coefficients of T$_{\rm S3}$ sample under different organic vapors with 20 ppm concentration at 300 .

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    Received: 11 December 2014 Revised: Online: Published: 01 July 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(7): 073001
      P. S. Shewale, Y. S. Yu. Growth-temperature-dependent optical and acetone detection properties of ZnO thin films[J]. Journal of Semiconductors, 2015, 36(7): 073001. doi: 10.1088/1674-4926/36/7/073001 ****P. S. Shewale, Y. S. Yu. Growth-temperature-dependent optical and acetone detection properties of ZnO thin films[J]. J. Semicond., 2015, 36(7): 073001. doi: 10.1088/1674-4926/36/7/073001.
      Citation:
      P. S. Shewale, Y. S. Yu. Growth-temperature-dependent optical and acetone detection properties of ZnO thin films[J]. Journal of Semiconductors, 2015, 36(7): 073001. doi: 10.1088/1674-4926/36/7/073001 ****
      P. S. Shewale, Y. S. Yu. Growth-temperature-dependent optical and acetone detection properties of ZnO thin films[J]. J. Semicond., 2015, 36(7): 073001. doi: 10.1088/1674-4926/36/7/073001.
      shu

      Growth-temperature-dependent optical and acetone detection properties of ZnO thin films

      DOI: 10.1088/1674-4926/36/7/073001
      • 1.

        Convergence of IT Devices Institute, Dong-Eui University, Busan 614-714, Korea

      • 2.

        Department of Radiological Science, Dong-Eui University, Busan 614-714, Korea

      Funds:

      Project supported by the Dong-Eui University Grant (No. 2014AA342).

      More Information
      • Corresponding author: E-mail: Y. S. Yu: ysyu@deu.ac.kr
      • Received Date: 2014-12-11
      • Accepted Date: 2015-02-12
      • Published Date: 2015-01-25

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