J. Semicond. > 2015, Volume 36 > Issue 7 > 076002

SEMICONDUCTOR TECHNOLOGY

Effect of FA/O complexing agents and H2O2 on chemical mechanical polishing of ruthenium in weakly alkaline slurry

Bo Duan, Weijing An, Jianwei Zhou and Shuai Wang

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 Corresponding author: Jianwei Zhou, E-mail: 1152058759@qq.com

DOI: 10.1088/1674-4926/36/7/076002

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Abstract: This paper investigated the effect of FA/O and hydrogen peroxide (H2O2) on ruthenium (Ru) removal rate (RR) and static etching rate (SER). It was revealed that Ru RR and SER first linearly increased then slowly decreaseed with the increasing H2O2 probably due to the formation of uniform Ru oxides on the surface during polishing. Their corrosion behaviors and states of surface oxidation were analyzed. In addition, FA/O could chelate Ru oxides (such as (RuO4)2- and RuO4- changed into soluble amine salts [R(NH3)4] (RuO4)2) and enhance Ru RR. The non-ionic surfactant AD was used to improve the Ru CMP performance. In particular, the addition of AD can lead to significant improvement of the surface roughness.

Key words: Ru chemical mechanical polishing, FA/O complexing agents, hydrogen peroxide, non-ionic surfactant AD



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Fig. 1.  Ru RR in colloidal silica-based slurry as a function of complexing agents.

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Fig. 2.  (a) Tafel plot of Ru as a function of complexing agents at pH 9. (b) The calculated corresponding corrosion current density and corrosion potential.

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Fig. 3.  Effect of H$_{2}$O$_{2}$ and FA/O on (a) the Ru RR and (b) the Ru SER.

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Fig. 4.  Tafel plot of Ru as a function of concentration of (a) H$_{2}$O$_{2}$ and (b) FA/O at pH 9, (c) potentiodynamic scan of Cu and Ru in 9~mL/L H$_{2}$O$_{2}$ and 9 mL/L FA/O solution.

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Fig. 5.  Schematic diagram of the polishing process.

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Fig. 6.  Contact angles between the polished copper wafers and DI water.

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Fig. 7.  AFM images of the Ru surface morphology after it had been treated with solutions at concentrations of non-ionic surfactant AD.

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    Received: 16 November 2014 Revised: Online: Published: 01 July 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(7): 076002
      Bo Duan, Weijing An, Jianwei Zhou, Shuai Wang. Effect of FA/O complexing agents and H2O2 on chemical mechanical polishing of ruthenium in weakly alkaline slurry[J]. Journal of Semiconductors, 2015, 36(7): 076002. doi: 10.1088/1674-4926/36/7/076002 ****B Duan, W J An, J W Zhou, S Wang. Effect of FA/O complexing agents and H2O2 on chemical mechanical polishing of ruthenium in weakly alkaline slurry[J]. J. Semicond., 2015, 36(7): 076002. doi: 10.1088/1674-4926/36/7/076002.
      Citation:
      Bo Duan, Weijing An, Jianwei Zhou, Shuai Wang. Effect of FA/O complexing agents and H2O2 on chemical mechanical polishing of ruthenium in weakly alkaline slurry[J]. Journal of Semiconductors, 2015, 36(7): 076002. doi: 10.1088/1674-4926/36/7/076002 ****
      B Duan, W J An, J W Zhou, S Wang. Effect of FA/O complexing agents and H2O2 on chemical mechanical polishing of ruthenium in weakly alkaline slurry[J]. J. Semicond., 2015, 36(7): 076002. doi: 10.1088/1674-4926/36/7/076002.
      shu

      Effect of FA/O complexing agents and H2O2 on chemical mechanical polishing of ruthenium in weakly alkaline slurry

      DOI: 10.1088/1674-4926/36/7/076002

      • Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China

      Funds:

      Project supported by the Special Project Items No. 2 in National Long-Term Technology Development Plan (No. 2009ZX02308), the Natural Science Foundation of Hebei Province (No. E2013202247), the Science and Technology Plan Project of Hebei Province (Nos. Z2010112, 10213936), the Hebei Provincial Department of Education Fund (No. 2011128), and the Scientific Research Fund of Hebei Provincial Education (No. QN2014208).

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      • Corresponding author: E-mail: 1152058759@qq.com
      • Received Date: 2014-11-16
      • Published Date: 2015-01-25

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