J. Semicond. > 2016, Volume 37 > Issue 4 > 044007
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SEMICONDUCTOR DEVICES

AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications

Xubo Song, Guodong Gu, Yuangang Wang, Xin Tan, Xingye Zhou, Shaobo Dun, Peng Xu, Jiayun Yin, Bihua Wei, Zhihong Feng and Shujun Cai

+ Author Affiliations

 Corresponding author: Zhihong Feng, Email:ga917vv@163.com

DOI: 10.1088/1674-4926/37/4/044007

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Abstract: We report the DC and RF characteristics of AlN/GaN high electron mobility transistors (HEMTs) with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 mS/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 mW/mm has been demonstrated at a drain bias of 10 V. To the authors' best knowledge, this is the earliest demonstration of power density at the Ka band for AlN/GaN HEMTs in the domestic, and also a high frequency of load-pull measurements for AlN/GaN HEMTs.

Key words: AlN/GaN, HEMTs, small signal, large signal, power density



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Fig. 1.  Schematic of the AlN/GaN HEMT cross section.

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Fig. 2.  (a) $I_{\rm DS}$-$V_{\rm DS}$ curves of AlN/GaN HEMT. (b) $I_{\rm DS}$-$V_{\rm DS}$ curves of AlGaN/GaN HEMT. (c) Transfer characteristics and extrinsic transconductance ($g_{\rm m})$ of AlN/GaN HEMT at the drain bias of 5 V. (d) Transfer characteristics and extrinsic transconductance ($g_{\rm m})$ of AlGaN/GaN HEMT at the drain bias of 5 V.

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Fig. 3.  The RF characteristic of the fabricated (a) AlN/GaN HEMT and (b) AlGaN/GaN HEMT.

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Fig. 4.  CW power sweep at the frequency of 29 GHz for the fabricated AlN/GaN HEMT with a gate width of 2 × 75 $\mu $m at $V_{\rm GS}$ $=$ $-2$ V and $V_{\rm DS}$ $=$ 10 V.

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Table 1.   The small-signal equivalent circuit model parameters of the fabricated AlN/GaN HEMT and AlGaN/GaN HEMT.

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    Received: 14 July 2015 Revised: Online: Published: 01 April 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(4): 044007
      Xubo Song, Guodong Gu, Yuangang Wang, Xin Tan, Xingye Zhou, Shaobo Dun, Peng Xu, Jiayun Yin, Bihua Wei, Zhihong Feng, Shujun Cai. AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications[J]. Journal of Semiconductors, 2016, 37(4): 044007. doi: 10.1088/1674-4926/37/4/044007 ****X B Song, G D Gu, Y G Wang, X Tan, X Y Zhou, S B Dun, P Xu, J Y Yin, B H Wei, Z H Feng, S J Cai. AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications[J]. J. Semicond., 2016, 37(4): 044007. doi: 10.1088/1674-4926/37/4/044007.
      Citation:
      Xubo Song, Guodong Gu, Yuangang Wang, Xin Tan, Xingye Zhou, Shaobo Dun, Peng Xu, Jiayun Yin, Bihua Wei, Zhihong Feng, Shujun Cai. AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications[J]. Journal of Semiconductors, 2016, 37(4): 044007. doi: 10.1088/1674-4926/37/4/044007 ****
      X B Song, G D Gu, Y G Wang, X Tan, X Y Zhou, S B Dun, P Xu, J Y Yin, B H Wei, Z H Feng, S J Cai. AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications[J]. J. Semicond., 2016, 37(4): 044007. doi: 10.1088/1674-4926/37/4/044007.
      shu

      AlN/GaN high electron mobility transistors on sapphire substrates for Kaband applications

      DOI: 10.1088/1674-4926/37/4/044007

      • National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61306113).

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      • Corresponding author: Email:ga917vv@163.com
      • Received Date: 2015-07-14
      • Accepted Date: 2015-10-28
      • Published Date: 2016-01-25

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