J. Semicond. > 2016, Volume 37 > Issue 6 > 064001
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SEMICONDUCTOR DEVICES

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Patrick W. C. Ho, Firas Odai Hatem, Haider Abbas F. Almurib and T. Nandha Kumar

+ Author Affiliations

 Corresponding author: Patrick W. C. Ho Email: kecx2pha@nottingham.edu.my

DOI: 10.1088/1674-4926/37/6/064001

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Abstract: Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO2 and TaO2 nonvolatile memristive devices were compared and the factors that make TaO2 memristive devices better than TiO2 memristive devices were studied. TaO2 memristive devices have shown better endurance performances (108 times more switching cycles) and faster switching speed (5 times) than TiO2 memristive devices. Electroforming of TaO2 memristive devices requires~4.5 times less energy than TiO2 memristive devices of a similar size. The retention period of TaO2 memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO2 and TaO2 memristive devices. This article summarizes the reasons that give TaO2 memristive devices the advantage over TiO2 memristive devices, in terms of electroformation, switching speed, and endurance.

Key words: resistive switching devices, TiO2 devices, TaO2 devices, non-volatile memory devices



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Fig. 1.  Typical construction of memristive devices.

(a) Titanium oxide memristive device with TiO2 bulk layer. (b) Tantalum oxide memristive device with TaO2 bulk layer and Ta2O5 insulator layer.


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Fig. 2.  (Color online) Switching mechanism of TaO2 devices.

(a) A negative bias is applied on the top electrode to switch the device ON,repelling negatively charged oxygen ions away from the Ta2O5 layer towards the TaO2 layer. (b) The Ta2O5 phase is reduced to TaO and Ta. After low-resistance TaO and Ta phases align,it forms conducting channels in the Ta2O5 layer. (c) Positive bias is applied on the top electrode to switch the device OFF,attracting oxygen ions towards the Ta2O5 layer. (d) The oxygen ions oxidize TaO and Ta phases to become Ta2O5 phases,and cause the collapse of conducting channels.


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Fig. 3.  (Color online) Switching mechanism of TaO2 devices.

(a) A negative bias is applied on the top electrode to switch the device ON, repelling negatively charged oxygen ions away from the Ta2O5 layer towards the TaO2 layer. (b) The Ta2O5 phase is reduced to TaO and Ta. After low-resistance TaO and Ta phases align, it forms conducting channels in the Ta2O5 layer. (c) Positive bias is applied on the top electrode to switch the device OFF, attracting oxygen ions towards the Ta2O5 layer. (d) The oxygen ions oxidize TaO and Ta phases to become Ta2O5 phases, and cause the collapse of conducting channels.


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Fig. 4.  Resistance switching of memristive devicesŒ.[87]

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Fig. 5.  Temperature-accelerated degradation plot at temperature T.

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Fig. 6.  Arrhenius plot to find the rate constant at room temperature.

$40.0 \times10^{-3}$ ℃-1 corresponds to a room temperature of 25 °C,while 4.0,5.0 and 6.7 (×10-3) °C-1 corresponds to the temperature-accelerated degradation performed at 250,200,and 150 °C respectively.


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Fig. 7.  Ti-O phase diagram[97].

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Fig. 8.  Ta-O phase diagram[98].

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Table 1.   Gibbs free energy of the formation of metal oxides used in MIM resistive switching devices.

Metal oxideGibbs free energy of formation,Δf G° (kJ/mol)
Hafnium oxide (HfO2)1088:2
Zirconium oxide (ZrO2)1042:8
Titanium oxide (TiO2)888:8
Silicon oxide (SiO2)856:4
Vanadium oxide (VO2)446:4
Nickel oxide (NiO)211:7
Tantalum oxide (TaO2)209:0
Copper oxide (Cu2O)149:0
DownLoad: CSV

Table 2.   Window functions proposed for the behavior of charge carriers approaching electrode boundaries.

Author(s) Window function,f(x)
Strukov et al.[3]f(x)=x(L-w)/L2
Joglekar et al.[71]f(x)=1-(2x-1)2p
Biolek et al.[73]f(x)=1-(x-stp(-i))2p
Prodromakis et al.[74]f(x)=1-[(x-0.5)2+0.75]p
Kvatinsky et al.[76] $f_{\rm on} (x)=\exp\left[-\exp(-\frac{x-a_{\rm on}}{p})\right]$
$f_{\rm off} (x)=\exp\left[-\exp(\frac{x-a_{\rm off}}{p})\right]$
DownLoad: CSV
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[6]
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    Received: 15 September 2015 Revised: 06 December 2015 Online: Published: 01 June 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(6): 064001
      Patrick W. C. Ho, Firas Odai Hatem, Haider Abbas F. Almurib, T. Nandha Kumar. Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices[J]. Journal of Semiconductors, 2016, 37(6): 064001. doi: 10.1088/1674-4926/37/6/064001 ****P. W. C. Ho, F O Hatem, H. A. F. Almurib, T. N. Kumar. Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices[J]. J. Semicond., 2016, 37(6): 064001. doi:  10.1088/1674-4926/37/6/064001.
      Citation:
      Patrick W. C. Ho, Firas Odai Hatem, Haider Abbas F. Almurib, T. Nandha Kumar. Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices[J]. Journal of Semiconductors, 2016, 37(6): 064001. doi: 10.1088/1674-4926/37/6/064001 ****
      P. W. C. Ho, F O Hatem, H. A. F. Almurib, T. N. Kumar. Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices[J]. J. Semicond., 2016, 37(6): 064001. doi:  10.1088/1674-4926/37/6/064001.
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      Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

      DOI: 10.1088/1674-4926/37/6/064001

      • Department of Electrical and Electronic Engineering, University of Nottingham Malaysia Campus, Jalan Broga, 43500 Semenyih, Malaysia

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      • Corresponding author: Patrick W. C. Ho Email: kecx2pha@nottingham.edu.my
      • Received Date: 2015-09-15
      • Revised Date: 2015-12-06
      • Published Date: 2016-06-01

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