Fig. 1.
Energy band diagram for n-ZnO/p-c-WSe2 HJ structure.
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| Citation: |
Shihua Huang, Qiannan Li, Dan Chi, Xiuqing Meng, Lü He. Simulation approach for optimization of ZnO/c-WSe2 heterojunction solar cells[J]. Journal of Semiconductors, 2017, 38(4): 044008. doi: 10.1088/1674-4926/38/4/044008
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S H Huang, Q N Li, D Chi, X Q Meng, L He. Simulation approach for optimization of ZnO/c-WSe2 heterojunction solar cells[J]. J. Semicond., 2017, 38(4): 044008. doi: 10.1088/1674-4926/38/4/044008.
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Simulation approach for optimization of ZnO/c-WSe2 heterojunction solar cells
DOI: 10.1088/1674-4926/38/4/044008
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Abstract
Taking into account defect density in WSe2, interface recombination between ZnO and WSe2, we presented a simulation study of ZnO/crystalline WSe2 heterojunction (HJ) solar cell using wxAMPS simulation software. The optimal conversion efficiency 39.07% for n-ZnO/p-c-WSe2 HJ solar cell can be realized without considering the impact of defects. High defect density (> 1.0 × 1011 cm-2) in c-WSe2 and large trap cross-section (> 1.0 × 10-10 cm2) have serious impact on solar cell efficiency. A thin p-WSe2 layer is intentionally inserted between ZnO layer and c-WSe2 to investigate the effect of the interface recombination. The interface properties are very crucial to the performance of ZnO/c-WSe2HJ solar cell. The affinity of ZnO value range between 3.7-4.5 eV gives the best conversion efficiency.-
Keywords:
- simulation,
- heterojunction solar cells,
- transport properties
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References
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