Fig. 1.
Schematic diagram of the epitaxial layer structure for GaNbased ultraviolet laser diodes.
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| Citation: |
Degang Zhao, Jing Yang, Zongshun Liu, Ping Chen, Jianjun Zhu, Desheng Jiang, Yongsheng Shi, Hai Wang, Lihong Duan, Liqun Zhang, Hui Yang. Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes[J]. Journal of Semiconductors, 2017, 38(5): 051001. doi: 10.1088/1674-4926/38/5/051001
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D G Zhao, J Yang, Z S Liu, P Chen, J J Zhu, D S Jiang, Y S Shi, H Wang, L H Duan, L Q Zhang, H Yang. Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes[J]. J. Semicond., 2017, 38(5): 051001. doi: 10.1088/1674-4926/38/5/051001.
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Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes
DOI: 10.1088/1674-4926/38/5/051001
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Abstract
Two kinds of continuous-wave GaN-based ultraviolet laser diodes (LDs) operated at room temperature and with different emission wavelengths are demonstrated.The LDs epitaxial layers are grown on GaN substrate by metalorganic chemical vapor deposition, with a 10×600 μm2 ridge waveguide structure.The electrical and optical characteristics of the ultraviolet LDs are investigated under direct-current injection at room temperature. The stimulated emission peak wavelength of first LD is 392.9 nm, the threshold current density and voltage is 1.5 kA/cm2 and 5.0 V, respectively.The output light power is 80 mW under the 4.0 kA/cm2 injection current density. The stimulated emission peak wavelength of second LD is 381.9 nm, the threshold current density the voltage is 2.8 kA/cm2 and 5.5 V, respectively.The output light power is 14 mW under a 4.0 kA/cm2 injection current density. -
References
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