Analysis of morphological, structural and electrical properties of annealed TiO<sub>2</sub> nanowires deposited by GLAD technique

B. Shougaijam; R. Swain; C. Ngangbam; T.R. Lenka

doi:10.1088/1674-4926/38/5/053001

J. Semicond. > 2017, Volume 38 > Issue 5 > 053001

SEMICONDUCTOR MATERIALS

Analysis of morphological, structural and electrical properties of annealed TiO₂ nanowires deposited by GLAD technique

B. Shougaijam^1,, R. Swain², C. Ngangbam³ and T.R. Lenka^1,

+ Author Affiliations

Corresponding author: B. Shougaijam, Email: biraj.sh89@gmail.com; T. R. Lenka, Email:t.r.lenka@ieee.org

DOI: 10.1088/1674-4926/38/5/053001

Abstract: The effect of annealing on vertically aligned TiO₂ NWs deposited by glancing angle deposition (GLAD) method on Si substrate using pressed and sintered TiO₂ pellets as source material is studied.The FE-SEM images reveal the retention of vertically aligned NWs on Si substrate after annealing process.The EDS analysis of TiO₂ NWs sample annealed at 600 ℃ in air for 1 h shows the higher weight percentage ratio of ~2.6(i.e., 72.27% oxygen and 27.73% titanium).The XRD pattern reveals that the polycrystalline nature of anatase TiO₂ dominates the annealed NWs sample.The electrical characteristics of Al/TiO₂-NWs/TiO₂-TF/p-Si (NW device) and Al/TiO₂-TF/p-Si (TF device) based on annealed samples are compared.It is riveting to observe a lower leakage current of ~1.32×10^-7 A/cm² at+1 V with interface trap density of ~6.71×10¹¹ eV^-1cm^-2 in NW device compared to ~2.23×10^-7 A/cm² in TF device.The dominant leakage mechanism is investigated to be generally Schottky emission; however Poole-Frenkel emission also takes place during high reverse bias beyond 4 V for NWs and 3 V for TF device.

Key words: annealing, GLAD, morphology, nanowires, structural, TiO₂

References

[1]	San S R. Analysis of optoelectronic properties of TIO₂ nanowires/Si heterojunction arrays. Chin Phys B, 2014, 23: 107302 doi: 10.1088/1674-1056/23/10/107302
[2]	Li H L, Yu Q J, Huang Y W. Ultralong rutile TIO₂ nanowire arrays for highly efficient dye-sensitized solar cells. Appl Mater Interfaces, 2016, 8: 13384 doi: 10.1021/acsami.6b01508
[3]	Tian W, Ho Y, Chen C, et al. Sensing performance of precisely ordered TIO₂ nanowire gas sensors fabricated by electron-beam lithography. Sensors, 2013, 13: 865 doi: 10.3390/s130100865
[4]	Xie Y, Wei L, Wei G, et al. A self-powered UV photodetector based on TIO₂ nanorod arrays. Nanoscale Res Lett, 2013, 8: 188 doi: 10.1186/1556-276X-8-188
[5]	Yu Y, Yin X, Kvit A, et al. Evolution of hollow TIO₂ nanostructures via the Kirkendall effect driven by cation exchange with enhanced photoelectrochemical performance. Nano Lett, 2014, 14: 2528 doi: 10.1021/nl5002907
[6]	Zhang W, Cunningham B T. Biosensors with porous dielectric surface for fluorescence enhancement and methods of manufacture. US Patent, 7869032B2, 2011
[7]	Wilka G D, Wallace R M, Anthony J M. High-k gate dielectrics: current status and materials properties considerations. J Appl Phys, 2001, 89: 5243 doi: 10.1063/1.1361065
[8]	Luisier M, Schenk A. Two-dimensional tunneling effects on the leakage current of MOSFETs with single dielectric and high-k gate stacks. IEEE Trans Electron Dev, 2008, 55: 6 http://ieeexplore.ieee.org/document/4495122/
[9]	Rajwali K, Zulfiqar, Simbarashe F. Magnetic and dielectric properties of (Co, Zn) co-doped SnO₂ diluted magnetic semiconducting nanoparticles. J Mater Sci: Mater Electron, 2016, 27: 5960 doi: 10.1007/s10854-016-4517-2
[10]	Kumar A, Mondal S, Kumar S G, et al. High performance solgel spin-coated titanium dioxide dielectric based MOS structures. Mat Sci Semicond Proc, 2015, 40: 77 doi: 10.1016/j.mssp.2015.06.073
[11]	Negara M A, Kitano M, Long R D. Oxide charge engineering of atomic layer deposited AlOxNy/Al₂O₃ gate dielectrics: a path to enhancement mode GaN devices. Appl Mater Interfaces, 2016, 8: 21089 doi: 10.1021/acsami.6b03862
[12]	Mahajan A M, Anil G K, Thibeault B J. High dielectric constant ZrO₂ films by atomic layer deposition technique on germanium substrates. Silicon, 2016, 8: 345 doi: 10.1007/s12633-015-9322-7
[13]	Jiro Y, Hong S, Ravi R. Characterization of atomic layer deposition HfO₂, Al₂O₃, and plasma-enhanced chemical vapor deposition Si₃N₄ as metal-insulator-metal capacitor dielectric for GaAs HBT technology. J Vac Sci Technol, 2013, 31: 01A134 http://ieeexplore.ieee.org/document/6375995/
[14]	Dervos C T, Thirios E, Novacovich J, et al. Permittivity properties of thermally treated TIO₂. Mater Lett, 2004, 58: 1502 doi: 10.1016/j.matlet.2003.10.012
[15]	Yang Y, Qu L, Dai L, et al. Coating of titanium dioxide on aligned carbon nanotubes for controlled syntheses of photoelectronic nanomaterials. Adv Mater, 2007, 19: 1239 doi: 10.1002/(ISSN)1521-4095
[16]	Sönmezoglu S, Akin S. Current transport mechanism of antimony-doped TIO₂ nanoparticles based on MOS device. Sensors Actuat A, 2013, 199: 18 doi: 10.1016/j.sna.2013.04.037
[17]	Yang W, Marino J, Monson A, et al. An investigation of annealing on the dielectric performance of TIO₂ thin films. Semicond Sci Technol, 2006, 21: 1573 doi: 10.1088/0268-1242/21/12/012
[18]	Vishwas M, Narasimha R K, Chakradhar R P S, et al. Effect of film thickness and annealing on optical properties of TIO₂ thin films and electrical characterization of MOS capacitors. J Mater Sci: Mater Electron, 2014, 25:4495 doi: 10.1007/s10854-014-2193-7
[19]	Frank M M, Kim S, Brown S L, Bruley J, et al. Scaling the MOSFET gate dielectric: from high-k to higher-k. Microelectron Eng, 2009, 86: 1603 doi: 10.1016/j.mee.2009.03.063
[20]	Perego M, Seguini G, Scarel G, et al. Energy band alignment at TIO₂/Si interface with various interlayers. J Appl Phys, 2008, 103: 043509 doi: 10.1063/1.2885109
[21]	Bae G, Song Y, Jung D, et al. Significant reduction of leakage current in the TIO₂/Si structure by the insertion of the CeO₂ intermediate layer. Appl Phys Lett, 2000, 77: 729 doi: 10.1063/1.127100
[22]	Chinnamuthu P, Mondal A, Singh N K, et al. Band gap enhancement of glancing angle deposited TIO₂ nanowire array. J Appl Phys, 2012, 112: 054315 doi: 10.1063/1.4749801
[23]	Aniruddha M, Jay C D, Chinnamuthu P, et al. Electrical properties of vertically oriented TIO₂ nanowire arrays synthesized by glancing angle deposition technique. Electron Mater Lett, 2013, 9: 213 doi: 10.1007/s13391-012-2136-5
[24]	Li Z C, Zhu Y, Zhou Q, et al. Photocatalytic properties of TIO₂ thin films obtained by glancing angle deposition. Appl Surf Sci, 2012, 258: 2766 doi: 10.1016/j.apsusc.2011.10.129
[25]	Viktor L, Matthew H, Andriy K, et al. Omnidirectional reflection from nanocolumnar TIO₂ films. J Appl Phys, 2012, 112: 084317 doi: 10.1063/1.4759138
[26]	Biraj S, Swain R, Ngangbam C, et al. Enhanced photodetection by glancing angle deposited vertically aligned TIO₂ nanowires. IEEE Trans Nanotechnol, 2016, 15: 389 doi: 10.1109/TNANO.2016.2536162
[27]	Zhou C M, Gall D. Growth competition during glancing angle deposition of nanorod honeycomb arrays. Appl Phys Lett, 2007, 90: 093103 doi: 10.1063/1.2709929
[28]	Jang H K, Whangbo S W, Kim H B. Titanium oxide films on Si (100) deposited by electron-beam evaporation at 250â„ƒ. J Vac Sci Technol A, 2000, 18: 917 doi: 10.1116/1.582275
[29]	Wang B, Qi H J, Wang H, et al. Morphology, structure and optical properties in TIO₂ nanostructured films annealed at various temperatures. Opt Mater Express, 2015, 5: 1410 doi: 10.1364/OME.5.001410
[30]	Khan A F, Mehmood M, Durrani S K, et al. Structural and optoelectronic properties of nanostructured TIO₂ thin films with annealing. Mat Sci Semicond Proc, 2015, 29: 161 doi: 10.1016/j.mssp.2014.02.009
[31]	Chakraborty S, Bera M K, Bhattacharya S, et al. Current conduction mechanism in TIO₂ gate dielectrics. Microelectron Eng, 2005, 81: 188 doi: 10.1016/j.mee.2005.03.005
[32]	Lee M K, Huang J J, Wu T S. Electrical characteristics improvement of oxygen-annealed MOCVD-TIO₂ films. Semicond SciTechnol, 2005, 20: 519 https://www.researchgate.net/publication/230921146_Electrical_characteristics_improvement_of_oxygen-annealed_MOCVD-TiO2_films
[33]	Liu Z H, Ng G I, Arulkumaran S, et al. Temperaturedependent forward gate current transport in atomic-layer deposited Al₂O₃/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor. Appl Phys Lett, 2011, 98: 63501 doi: 10.1063/1.3554364
[34]	Perera R, Ikeda A, Hattori R, et al. Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation. Microelectron Eng, 2003, 65: 357 doi: 10.1016/S0167-9317(02)01025-0
[35]	Kwa K S K, Chattopadhyay S, Jankovic N D, et al. A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics. Semicond Sci Technol, 2003, 18: 82 doi: 10.1088/0268-1242/18/2/303
[36]	Hill W A, Coleman C C. A single-frequency approximation for interface-state density determination. Solid State Electron, 1989, 23: 987 http://www.sciencedirect.com/science/article/pii/0038110180900647
[37]	Pakma O, Serin N, Serin T, et al. On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TIO₂/p-Si (MIS) structures. Physica B, 2011, 406: 771 doi: 10.1016/j.physb.2010.11.078

Fig. 1. (a) Top view FE-SEM image of as-deposited GLAD-TiO₂ NWs. (b) Cross section view of the grown TiO₂-NWs on TiO₂-TF/Si. (c) TEM image showing the growth direction of TiO₂-NWs. (d) FE-SEM image of the post-annealed TiO₂ NWs (annealed at 600 ℃ in air for 1 h.) deposited on Si and inset shows the cross sectional image. (e) EDS analysis of the annealed TiO₂ NWs and inset shows the chemical mapping.

DownLoad: Full-Size Img PowerPoint

Fig. 2. XRD pattern of TiO₂ NWs annealed at 600 ℃ in air for 1 h.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (a) The schematic cross section of Al/TiO₂-NW/TiO₂-TF/p-Si (NW device) under forward bias condition. (b) I-V characteristics of NW and TF devices measured at room temperature.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (a) The dominant leakage mechanism Schottky emission (SE) and Poole-Frenkel emission (PFE) of the device. (b) The ln (J/T² versus V^0.5 plot (SE) and (c) ln (J/V) versus V^0.5 plot (PFE) for TF and NW based device.

DownLoad: Full-Size Img PowerPoint

Fig. 5. Frequency dependent C-V characteristics of the NW device and the inset shows the 1/C² versus V plot.

DownLoad: Full-Size Img PowerPoint

Fig. 6. Conductance--voltage curve of NW (Al/TiO₂-NW/TiO₂-TF/Si) device at 500 kHz frequency.

DownLoad: Full-Size Img PowerPoint

[1]	San S R. Analysis of optoelectronic properties of TIO₂ nanowires/Si heterojunction arrays. Chin Phys B, 2014, 23: 107302 doi: 10.1088/1674-1056/23/10/107302
[2]	Li H L, Yu Q J, Huang Y W. Ultralong rutile TIO₂ nanowire arrays for highly efficient dye-sensitized solar cells. Appl Mater Interfaces, 2016, 8: 13384 doi: 10.1021/acsami.6b01508
[3]	Tian W, Ho Y, Chen C, et al. Sensing performance of precisely ordered TIO₂ nanowire gas sensors fabricated by electron-beam lithography. Sensors, 2013, 13: 865 doi: 10.3390/s130100865
[4]	Xie Y, Wei L, Wei G, et al. A self-powered UV photodetector based on TIO₂ nanorod arrays. Nanoscale Res Lett, 2013, 8: 188 doi: 10.1186/1556-276X-8-188
[5]	Yu Y, Yin X, Kvit A, et al. Evolution of hollow TIO₂ nanostructures via the Kirkendall effect driven by cation exchange with enhanced photoelectrochemical performance. Nano Lett, 2014, 14: 2528 doi: 10.1021/nl5002907
[6]	Zhang W, Cunningham B T. Biosensors with porous dielectric surface for fluorescence enhancement and methods of manufacture. US Patent, 7869032B2, 2011
[7]	Wilka G D, Wallace R M, Anthony J M. High-k gate dielectrics: current status and materials properties considerations. J Appl Phys, 2001, 89: 5243 doi: 10.1063/1.1361065
[8]	Luisier M, Schenk A. Two-dimensional tunneling effects on the leakage current of MOSFETs with single dielectric and high-k gate stacks. IEEE Trans Electron Dev, 2008, 55: 6 http://ieeexplore.ieee.org/document/4495122/
[9]	Rajwali K, Zulfiqar, Simbarashe F. Magnetic and dielectric properties of (Co, Zn) co-doped SnO₂ diluted magnetic semiconducting nanoparticles. J Mater Sci: Mater Electron, 2016, 27: 5960 doi: 10.1007/s10854-016-4517-2
[10]	Kumar A, Mondal S, Kumar S G, et al. High performance solgel spin-coated titanium dioxide dielectric based MOS structures. Mat Sci Semicond Proc, 2015, 40: 77 doi: 10.1016/j.mssp.2015.06.073
[11]	Negara M A, Kitano M, Long R D. Oxide charge engineering of atomic layer deposited AlOxNy/Al₂O₃ gate dielectrics: a path to enhancement mode GaN devices. Appl Mater Interfaces, 2016, 8: 21089 doi: 10.1021/acsami.6b03862
[12]	Mahajan A M, Anil G K, Thibeault B J. High dielectric constant ZrO₂ films by atomic layer deposition technique on germanium substrates. Silicon, 2016, 8: 345 doi: 10.1007/s12633-015-9322-7
[13]	Jiro Y, Hong S, Ravi R. Characterization of atomic layer deposition HfO₂, Al₂O₃, and plasma-enhanced chemical vapor deposition Si₃N₄ as metal-insulator-metal capacitor dielectric for GaAs HBT technology. J Vac Sci Technol, 2013, 31: 01A134 http://ieeexplore.ieee.org/document/6375995/
[14]	Dervos C T, Thirios E, Novacovich J, et al. Permittivity properties of thermally treated TIO₂. Mater Lett, 2004, 58: 1502 doi: 10.1016/j.matlet.2003.10.012
[15]	Yang Y, Qu L, Dai L, et al. Coating of titanium dioxide on aligned carbon nanotubes for controlled syntheses of photoelectronic nanomaterials. Adv Mater, 2007, 19: 1239 doi: 10.1002/(ISSN)1521-4095
[16]	Sönmezoglu S, Akin S. Current transport mechanism of antimony-doped TIO₂ nanoparticles based on MOS device. Sensors Actuat A, 2013, 199: 18 doi: 10.1016/j.sna.2013.04.037
[17]	Yang W, Marino J, Monson A, et al. An investigation of annealing on the dielectric performance of TIO₂ thin films. Semicond Sci Technol, 2006, 21: 1573 doi: 10.1088/0268-1242/21/12/012
[18]	Vishwas M, Narasimha R K, Chakradhar R P S, et al. Effect of film thickness and annealing on optical properties of TIO₂ thin films and electrical characterization of MOS capacitors. J Mater Sci: Mater Electron, 2014, 25:4495 doi: 10.1007/s10854-014-2193-7
[19]	Frank M M, Kim S, Brown S L, Bruley J, et al. Scaling the MOSFET gate dielectric: from high-k to higher-k. Microelectron Eng, 2009, 86: 1603 doi: 10.1016/j.mee.2009.03.063
[20]	Perego M, Seguini G, Scarel G, et al. Energy band alignment at TIO₂/Si interface with various interlayers. J Appl Phys, 2008, 103: 043509 doi: 10.1063/1.2885109
[21]	Bae G, Song Y, Jung D, et al. Significant reduction of leakage current in the TIO₂/Si structure by the insertion of the CeO₂ intermediate layer. Appl Phys Lett, 2000, 77: 729 doi: 10.1063/1.127100
[22]	Chinnamuthu P, Mondal A, Singh N K, et al. Band gap enhancement of glancing angle deposited TIO₂ nanowire array. J Appl Phys, 2012, 112: 054315 doi: 10.1063/1.4749801
[23]	Aniruddha M, Jay C D, Chinnamuthu P, et al. Electrical properties of vertically oriented TIO₂ nanowire arrays synthesized by glancing angle deposition technique. Electron Mater Lett, 2013, 9: 213 doi: 10.1007/s13391-012-2136-5
[24]	Li Z C, Zhu Y, Zhou Q, et al. Photocatalytic properties of TIO₂ thin films obtained by glancing angle deposition. Appl Surf Sci, 2012, 258: 2766 doi: 10.1016/j.apsusc.2011.10.129
[25]	Viktor L, Matthew H, Andriy K, et al. Omnidirectional reflection from nanocolumnar TIO₂ films. J Appl Phys, 2012, 112: 084317 doi: 10.1063/1.4759138
[26]	Biraj S, Swain R, Ngangbam C, et al. Enhanced photodetection by glancing angle deposited vertically aligned TIO₂ nanowires. IEEE Trans Nanotechnol, 2016, 15: 389 doi: 10.1109/TNANO.2016.2536162
[27]	Zhou C M, Gall D. Growth competition during glancing angle deposition of nanorod honeycomb arrays. Appl Phys Lett, 2007, 90: 093103 doi: 10.1063/1.2709929
[28]	Jang H K, Whangbo S W, Kim H B. Titanium oxide films on Si (100) deposited by electron-beam evaporation at 250â„ƒ. J Vac Sci Technol A, 2000, 18: 917 doi: 10.1116/1.582275
[29]	Wang B, Qi H J, Wang H, et al. Morphology, structure and optical properties in TIO₂ nanostructured films annealed at various temperatures. Opt Mater Express, 2015, 5: 1410 doi: 10.1364/OME.5.001410
[30]	Khan A F, Mehmood M, Durrani S K, et al. Structural and optoelectronic properties of nanostructured TIO₂ thin films with annealing. Mat Sci Semicond Proc, 2015, 29: 161 doi: 10.1016/j.mssp.2014.02.009
[31]	Chakraborty S, Bera M K, Bhattacharya S, et al. Current conduction mechanism in TIO₂ gate dielectrics. Microelectron Eng, 2005, 81: 188 doi: 10.1016/j.mee.2005.03.005
[32]	Lee M K, Huang J J, Wu T S. Electrical characteristics improvement of oxygen-annealed MOCVD-TIO₂ films. Semicond SciTechnol, 2005, 20: 519 https://www.researchgate.net/publication/230921146_Electrical_characteristics_improvement_of_oxygen-annealed_MOCVD-TiO2_films
[33]	Liu Z H, Ng G I, Arulkumaran S, et al. Temperaturedependent forward gate current transport in atomic-layer deposited Al₂O₃/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor. Appl Phys Lett, 2011, 98: 63501 doi: 10.1063/1.3554364
[34]	Perera R, Ikeda A, Hattori R, et al. Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation. Microelectron Eng, 2003, 65: 357 doi: 10.1016/S0167-9317(02)01025-0
[35]	Kwa K S K, Chattopadhyay S, Jankovic N D, et al. A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics. Semicond Sci Technol, 2003, 18: 82 doi: 10.1088/0268-1242/18/2/303
[36]	Hill W A, Coleman C C. A single-frequency approximation for interface-state density determination. Solid State Electron, 1989, 23: 987 http://www.sciencedirect.com/science/article/pii/0038110180900647
[37]	Pakma O, Serin N, Serin T, et al. On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TIO₂/p-Si (MIS) structures. Physica B, 2011, 406: 771 doi: 10.1016/j.physb.2010.11.078

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 3667 Times PDF downloads: 14 Times Cited by: 0 Times

History

Received: 07 June 2016 Revised: 07 October 2016 Online: Published: 01 May 2017

Article Navigation > Journal of Semiconductors > 2017 > 38(5): 053001

B. Shougaijam, R. Swain, C. Ngangbam, T.R. Lenka. Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique[J]. Journal of Semiconductors, 2017, 38(5): 053001. doi: 10.1088/1674-4926/38/5/053001 ****B Shougaijam, R Swain, C Ngangbam, T R Lenka. Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique[J]. J. Semicond., 2017, 38(5): 053001. doi: 10.1088/1674-4926/38/5/053001.

Citation:

B. Shougaijam, R. Swain, C. Ngangbam, T.R. Lenka. Analysis of morphological, structural and electrical properties of annealed TiO₂ nanowires deposited by GLAD technique[J]. Journal of Semiconductors, 2017, 38(5): 053001. doi: 10.1088/1674-4926/38/5/053001 ****

B Shougaijam, R Swain, C Ngangbam, T R Lenka. Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique[J]. J. Semicond., 2017, 38(5): 053001. doi: 10.1088/1674-4926/38/5/053001.

Citation:

PDF( 7108 KB)

Analysis of morphological, structural and electrical properties of annealed TiO₂ nanowires deposited by GLAD technique

DOI: 10.1088/1674-4926/38/5/053001

1.
Microelectronics & VLSI Design Group, Department of ECE, National Institute of Technology Silchar, Assam, 788010, India
2.
Department of Electronics Engineering, Parala Maharaja Engineering College, Berhampur, 761003, Odisha, India
3.
Department of ECE, National Institute of Technology Manipur, 795004, India

More Information

Corresponding author: B. Shougaijam, Email: biraj.sh89@gmail.com; T. R. Lenka, Email:t.r.lenka@ieee.org
Received Date: 2016-06-07
Revised Date: 2016-10-07
Published Date: 2017-05-01

Abstract

Abstract

The effect of annealing on vertically aligned TiO₂ NWs deposited by glancing angle deposition (GLAD) method on Si substrate using pressed and sintered TiO₂ pellets as source material is studied.The FE-SEM images reveal the retention of vertically aligned NWs on Si substrate after annealing process.The EDS analysis of TiO₂ NWs sample annealed at 600 ℃ in air for 1 h shows the higher weight percentage ratio of ~2.6(i.e., 72.27% oxygen and 27.73% titanium).The XRD pattern reveals that the polycrystalline nature of anatase TiO₂ dominates the annealed NWs sample.The electrical characteristics of Al/TiO₂-NWs/TiO₂-TF/p-Si (NW device) and Al/TiO₂-TF/p-Si (TF device) based on annealed samples are compared.It is riveting to observe a lower leakage current of ~1.32×10^-7 A/cm² at+1 V with interface trap density of ~6.71×10¹¹ eV^-1cm^-2 in NW device compared to ~2.23×10^-7 A/cm² in TF device.The dominant leakage mechanism is investigated to be generally Schottky emission; however Poole-Frenkel emission also takes place during high reverse bias beyond 4 V for NWs and 3 V for TF device.
- annealing,
- GLAD,
- morphology,
- nanowires,
- structural,
- TiO₂

FullText(HTML)

References(37)

References

[1]	San S R. Analysis of optoelectronic properties of TIO₂ nanowires/Si heterojunction arrays. Chin Phys B, 2014, 23: 107302 doi: 10.1088/1674-1056/23/10/107302
[2]	Li H L, Yu Q J, Huang Y W. Ultralong rutile TIO₂ nanowire arrays for highly efficient dye-sensitized solar cells. Appl Mater Interfaces, 2016, 8: 13384 doi: 10.1021/acsami.6b01508
[3]	Tian W, Ho Y, Chen C, et al. Sensing performance of precisely ordered TIO₂ nanowire gas sensors fabricated by electron-beam lithography. Sensors, 2013, 13: 865 doi: 10.3390/s130100865
[4]	Xie Y, Wei L, Wei G, et al. A self-powered UV photodetector based on TIO₂ nanorod arrays. Nanoscale Res Lett, 2013, 8: 188 doi: 10.1186/1556-276X-8-188
[5]	Yu Y, Yin X, Kvit A, et al. Evolution of hollow TIO₂ nanostructures via the Kirkendall effect driven by cation exchange with enhanced photoelectrochemical performance. Nano Lett, 2014, 14: 2528 doi: 10.1021/nl5002907
[6]	Zhang W, Cunningham B T. Biosensors with porous dielectric surface for fluorescence enhancement and methods of manufacture. US Patent, 7869032B2, 2011
[7]	Wilka G D, Wallace R M, Anthony J M. High-k gate dielectrics: current status and materials properties considerations. J Appl Phys, 2001, 89: 5243 doi: 10.1063/1.1361065
[8]	Luisier M, Schenk A. Two-dimensional tunneling effects on the leakage current of MOSFETs with single dielectric and high-k gate stacks. IEEE Trans Electron Dev, 2008, 55: 6 http://ieeexplore.ieee.org/document/4495122/
[9]	Rajwali K, Zulfiqar, Simbarashe F. Magnetic and dielectric properties of (Co, Zn) co-doped SnO₂ diluted magnetic semiconducting nanoparticles. J Mater Sci: Mater Electron, 2016, 27: 5960 doi: 10.1007/s10854-016-4517-2
[10]	Kumar A, Mondal S, Kumar S G, et al. High performance solgel spin-coated titanium dioxide dielectric based MOS structures. Mat Sci Semicond Proc, 2015, 40: 77 doi: 10.1016/j.mssp.2015.06.073
[11]	Negara M A, Kitano M, Long R D. Oxide charge engineering of atomic layer deposited AlOxNy/Al₂O₃ gate dielectrics: a path to enhancement mode GaN devices. Appl Mater Interfaces, 2016, 8: 21089 doi: 10.1021/acsami.6b03862
[12]	Mahajan A M, Anil G K, Thibeault B J. High dielectric constant ZrO₂ films by atomic layer deposition technique on germanium substrates. Silicon, 2016, 8: 345 doi: 10.1007/s12633-015-9322-7
[13]	Jiro Y, Hong S, Ravi R. Characterization of atomic layer deposition HfO₂, Al₂O₃, and plasma-enhanced chemical vapor deposition Si₃N₄ as metal-insulator-metal capacitor dielectric for GaAs HBT technology. J Vac Sci Technol, 2013, 31: 01A134 http://ieeexplore.ieee.org/document/6375995/
[14]	Dervos C T, Thirios E, Novacovich J, et al. Permittivity properties of thermally treated TIO₂. Mater Lett, 2004, 58: 1502 doi: 10.1016/j.matlet.2003.10.012
[15]	Yang Y, Qu L, Dai L, et al. Coating of titanium dioxide on aligned carbon nanotubes for controlled syntheses of photoelectronic nanomaterials. Adv Mater, 2007, 19: 1239 doi: 10.1002/(ISSN)1521-4095
[16]	Sönmezoglu S, Akin S. Current transport mechanism of antimony-doped TIO₂ nanoparticles based on MOS device. Sensors Actuat A, 2013, 199: 18 doi: 10.1016/j.sna.2013.04.037
[17]	Yang W, Marino J, Monson A, et al. An investigation of annealing on the dielectric performance of TIO₂ thin films. Semicond Sci Technol, 2006, 21: 1573 doi: 10.1088/0268-1242/21/12/012
[18]	Vishwas M, Narasimha R K, Chakradhar R P S, et al. Effect of film thickness and annealing on optical properties of TIO₂ thin films and electrical characterization of MOS capacitors. J Mater Sci: Mater Electron, 2014, 25:4495 doi: 10.1007/s10854-014-2193-7
[19]	Frank M M, Kim S, Brown S L, Bruley J, et al. Scaling the MOSFET gate dielectric: from high-k to higher-k. Microelectron Eng, 2009, 86: 1603 doi: 10.1016/j.mee.2009.03.063
[20]	Perego M, Seguini G, Scarel G, et al. Energy band alignment at TIO₂/Si interface with various interlayers. J Appl Phys, 2008, 103: 043509 doi: 10.1063/1.2885109
[21]	Bae G, Song Y, Jung D, et al. Significant reduction of leakage current in the TIO₂/Si structure by the insertion of the CeO₂ intermediate layer. Appl Phys Lett, 2000, 77: 729 doi: 10.1063/1.127100
[22]	Chinnamuthu P, Mondal A, Singh N K, et al. Band gap enhancement of glancing angle deposited TIO₂ nanowire array. J Appl Phys, 2012, 112: 054315 doi: 10.1063/1.4749801
[23]	Aniruddha M, Jay C D, Chinnamuthu P, et al. Electrical properties of vertically oriented TIO₂ nanowire arrays synthesized by glancing angle deposition technique. Electron Mater Lett, 2013, 9: 213 doi: 10.1007/s13391-012-2136-5
[24]	Li Z C, Zhu Y, Zhou Q, et al. Photocatalytic properties of TIO₂ thin films obtained by glancing angle deposition. Appl Surf Sci, 2012, 258: 2766 doi: 10.1016/j.apsusc.2011.10.129
[25]	Viktor L, Matthew H, Andriy K, et al. Omnidirectional reflection from nanocolumnar TIO₂ films. J Appl Phys, 2012, 112: 084317 doi: 10.1063/1.4759138
[26]	Biraj S, Swain R, Ngangbam C, et al. Enhanced photodetection by glancing angle deposited vertically aligned TIO₂ nanowires. IEEE Trans Nanotechnol, 2016, 15: 389 doi: 10.1109/TNANO.2016.2536162
[27]	Zhou C M, Gall D. Growth competition during glancing angle deposition of nanorod honeycomb arrays. Appl Phys Lett, 2007, 90: 093103 doi: 10.1063/1.2709929
[28]	Jang H K, Whangbo S W, Kim H B. Titanium oxide films on Si (100) deposited by electron-beam evaporation at 250â„ƒ. J Vac Sci Technol A, 2000, 18: 917 doi: 10.1116/1.582275
[29]	Wang B, Qi H J, Wang H, et al. Morphology, structure and optical properties in TIO₂ nanostructured films annealed at various temperatures. Opt Mater Express, 2015, 5: 1410 doi: 10.1364/OME.5.001410
[30]	Khan A F, Mehmood M, Durrani S K, et al. Structural and optoelectronic properties of nanostructured TIO₂ thin films with annealing. Mat Sci Semicond Proc, 2015, 29: 161 doi: 10.1016/j.mssp.2014.02.009
[31]	Chakraborty S, Bera M K, Bhattacharya S, et al. Current conduction mechanism in TIO₂ gate dielectrics. Microelectron Eng, 2005, 81: 188 doi: 10.1016/j.mee.2005.03.005
[32]	Lee M K, Huang J J, Wu T S. Electrical characteristics improvement of oxygen-annealed MOCVD-TIO₂ films. Semicond SciTechnol, 2005, 20: 519 https://www.researchgate.net/publication/230921146_Electrical_characteristics_improvement_of_oxygen-annealed_MOCVD-TiO2_films
[33]	Liu Z H, Ng G I, Arulkumaran S, et al. Temperaturedependent forward gate current transport in atomic-layer deposited Al₂O₃/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor. Appl Phys Lett, 2011, 98: 63501 doi: 10.1063/1.3554364
[34]	Perera R, Ikeda A, Hattori R, et al. Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation. Microelectron Eng, 2003, 65: 357 doi: 10.1016/S0167-9317(02)01025-0
[35]	Kwa K S K, Chattopadhyay S, Jankovic N D, et al. A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics. Semicond Sci Technol, 2003, 18: 82 doi: 10.1088/0268-1242/18/2/303
[36]	Hill W A, Coleman C C. A single-frequency approximation for interface-state density determination. Solid State Electron, 1989, 23: 987 http://www.sciencedirect.com/science/article/pii/0038110180900647
[37]	Pakma O, Serin N, Serin T, et al. On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TIO₂/p-Si (MIS) structures. Physica B, 2011, 406: 771 doi: 10.1016/j.physb.2010.11.078

Analysis of morphological, structural and electrical properties of annealed TiO₂ nanowires deposited by GLAD technique

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Analysis of morphological, structural and electrical properties of annealed TiO₂ nanowires deposited by GLAD technique

DOI: 10.1088/1674-4926/38/5/053001

Abstract

References

Proportional views

Catalog

Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique

References

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique

DOI: 10.1088/1674-4926/38/5/053001

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content

Analysis of morphological, structural and electrical properties of annealed TiO₂ nanowires deposited by GLAD technique

Analysis of morphological, structural and electrical properties of annealed TiO₂ nanowires deposited by GLAD technique