Fig. 1.
XRD spectra of ZnSe/ITO/glass thin films of (a) 80, (b) 90, and (c) 100 nm thickness. (d) The 100 nm thick ZnSe/glass sample is also included for comparison.
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| Citation: |
A.A. Khurram, M. Imran, Nawazish A. Khan, M. Nasir Mehmood. ZnSe/ITO thin films:candidate for CdTe solar cell window layer[J]. Journal of Semiconductors, 2017, 38(9): 093001. doi: 10.1088/1674-4926/38/9/093001
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A A Khurram, M Imran, N A Khan, M N Mehmood. ZnSe/ITO thin films:candidate for CdTe solar cell window layer[J]. J. Semicond., 2017, 38(9): 093001. doi: 10.1088/1674-4926/38/9/093001.
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ZnSe/ITO thin films:candidate for CdTe solar cell window layer
DOI: 10.1088/1674-4926/38/9/093001
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Abstract
The crystal structure, electrical and optical properties of ZnSe thin films deposited on an In2O3:Sn (ITO) substrate are evaluated for their suitability as the window layer of CdTe thin film solar cells. ZnSe thin films of 80, 90, and 100 nm thickness were deposited by a physical vapor deposition method on Indium tin oxide coated glass substrates. The lattice parameters are increased to 5.834 Å when the film thickness was 100 nm, which is close to that of CdS. The crystallite size is decreased with the increase of film thickness. The optical transmission analysis shows that the energy gap for the sample with the highest thickness has also increased and is very close to 2.7 eV. The photo decay is also studied as a function of ZnSe film thickness.-
Keywords:
- ZnSe thin films,
- ITO substrate,
- XRD,
- optical transmission,
- photodecay
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References
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