Fig. 1.
(Color online) Schematic cross-section view of VFP HK LDMOS.
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| Citation: |
Lijuan Wu, Limin Hu, Lin Zhu, Hang Yang, Bing Lei, Haiqing Xie. Ultralow specific ON-resistance high-k LDMOS with vertical field plate[J]. Journal of Semiconductors, 2018, 39(10): 104006. doi: 10.1088/1674-4926/39/10/104006
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L J Wu, L M Hu, L Zhu, H Yang, B Lei, H Q Xie. Ultralow specific ON-resistance high-k LDMOS with vertical field plate[J]. J. Semicond., 2018, 39(10): 104006. doi: 10.1088/1674-4926/39/10/104006.
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Ultralow specific ON-resistance high-k LDMOS with vertical field plate
doi: 10.1088/1674-4926/39/10/104006
More Information-
Abstract
An ultralow specific on-resistance high-k LDMOS with vertical field plate (VFP HK LDMOS) is proposed. The high-k dielectric trench and highly doped interface N+ layer are made in bulk silicon to reduce the surface field of the drift region in the VFP HK LDMOS. The gate vertical field plate (VFP) pinning in the high-k dielectric trench can modulate the bulk electric field. The high-k dielectric not only provides polarized charges to assist depletion of the drift region, so that the drift region and high-k trench maintain charge balance adaptively, but also can fully assist in depleting the drift region to increase the drift doping concentration and reshape the electric field to avoid premature breakdown. Compared with the conventional structure, the VFP HK LDMOS has the breakdown voltage of 629.1 V at the drift length of 40 μm and the specific on-resistance of 38.4 mΩ·cm2 at the gate potential of 15 V. Then the power figure of merit is 10.31 MW/cm2. -
References
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