InAs-based interband cascade lasers at 4.0 <i>μ</i>m operating at room temperature

Tian Yu; Shuman Liu; Jinchuan Zhang; Bo Xu; Lijun Wang; Junqi Liu; Ning Zhuo; Shenqiang Zhai; Xiaoling Ye; Yonghai Chen; Fengqi Liu; Zhanguo Wang

doi:10.1088/1674-4926/39/11/114003

J. Semicond. > 2018, Volume 39 > Issue 11 > 114003, doi: 10.1088/1674-4926/39/11/114003

SEMICONDUCTOR DEVICES

InAs-based interband cascade lasers at 4.0 μm operating at room temperature

Tian Yu^{1, 2}, Shuman Liu^{1, 2,}, Jinchuan Zhang^{1, 2}, Bo Xu^{1, 2}, Lijun Wang^{1, 2}, Junqi Liu^{1, 2}, Ning Zhuo¹, Shenqiang Zhai¹, Xiaoling Ye^{1, 2}, Yonghai Chen^{1, 2}, Fengqi Liu^{1, 2,} and Zhanguo Wang^{1, 2}

+ Author Affiliations

Corresponding author: Shuman Liu, Email: liusm@semi.ac.cn; Fengqi Liu, fqliu@semi.ac.cn

Abstract: InAs-based interband cascade lasers (ICLs) with InAs plasmon waveguides or InAs/AlSb superlattice (SL) waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm² at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n⁺⁺ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides.

Key words: interband cascade laser, InAs-based, InAs/AlSb superlattice

References

[1]	Faist J, Capasso F, Sivco D L, et al. Quantum cascade laser. Science, 1994, 264: 553 doi: 10.1126/science.264.5158.553
[2]	Vitiello M S, Scalari G, Williams B, et al. Quantum cascade lasers: 20 years of challenges. Opt Express, 2015, 23: 5167 doi: 10.1364/OE.23.005167
[3]	Hou C C, Zhao Y, Zhang J C, et al. Room temperature continuous wave operation of quantum cascade laser at λ ~ 9.4 μm. J Semicond, 2018, 39: 034001 doi: 10.1088/1674-4926/39/3/034001
[4]	Ciaffoni L, Grilli R, Hancock G, et al. 3.5-μm high-resolution gas sensing employing a LiNbO₃ QPM–DFG waveguide module. Appl Phys B, 2008, 94: 517
[5]	Bauer A, Rössner K, Lehnhardt T, et al. Mid-infrared semiconductor heterostructure lasers for gas sensing applications. Semicond Sci Technol, 2011, 26: 014032 doi: 10.1088/0268-1242/26/1/014032
[6]	Bandyopadhyay N, Slivken S, Bai Y, et al. High power, continuous wave, room temperature operation of λ ~ 3.4 μm and λ~3.55 μm InP-based quantum cascade lasers. Appl Phys Lett, 2012, 100: 212104 doi: 10.1063/1.4719110
[7]	Bandyopadhyay N, Bai Y, Gokden B, et al. Watt level performance of quantum cascade lasers in room temperature continuous wave operation at λ ~ 3.76 μm. Appl Phys Lett, 2010, 97: 131117 doi: 10.1063/1.3496489
[8]	Yang R Q. Infrared laser based on intersubband transitions in quantum well. Superlattices Microstruct, 1995, 17: 77 doi: 10.1006/spmi.1995.1017
[9]	Kim M, Bewley W W, Canedy C L, et al. High-power continuous-wave interband cascade lasers with 10 active stages. Opt Express, 2015, 23: 9664 doi: 10.1364/OE.23.009664
[10]	Vurgaftman I, Bewley W W, Canedy C L, et al. Rebalancing of internally generated carriers for mid-infrared cascade lasers with very low power consumption. Nature Commun, 2011, 2: 585 doi: 10.1038/ncomms1595
[11]	Edlinger M, Weih R, Scheuermann J, et al. Monolithic single mode interband cascade lasers with wide wavelength tunability. Appl Phys Lett, 2016, 109: 201109 doi: 10.1063/1.4968535
[12]	Weih R, Nähle L, Höfling S, et al. Single mode interband cascade lasers based on lateral metal gratings. Appl Phys Lett, 2014, 105: 071111 doi: 10.1063/1.4893788
[13]	Yang R Q, Li L, Zhao L, et al. Recent progress in development of InAs-based interband cascade lasers. Proc SPIE, 2013, 8640: 86400Q doi: 10.1117/12.2005271
[14]	Li L, Jiang Y, Ye H, et al. Low-threshold InAs-based interband cascade lasers operating at high temperatures. Appl Phys Lett, 2015, 106: 251102 doi: 10.1063/1.4922995
[15]	Tian Z, Yang R Q, Mishima T D, et al. InAs-based interband cascade lasers near 6 μm. Electron Lett, 2008, 45: 48
[16]	Rassel S M S, Li L, Li Y, et al. High-temperature and low-threshold interband cascade lasers at wavelengths longer than 6 μm. Opt Eng, 2018, 57: 011021
[17]	Dallner M, Hau F, Höfling S, et al. InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm² at room temperature. Appl Phys Lett, 2015, 106: 041108 doi: 10.1063/1.4907002
[18]	Tian Z, Li L, Ye H, et al. InAs-based interband cascade lasers with emission wavelength at 10.4 μm. Electron Lett, 2012, 48: 113 doi: 10.1049/el.2011.3555

Fig. 2. (Color online) Calculated band diagram for one cascade stage. The layer structure starting with the barrier separating the active region and the electron injector is as follows: 25 Å AlSb/21.5 Å InAs/29 Å Ga_0.7In_0.3Sb/19.5 Å InAs/12 Å AlSb/32 Å GaSb/12 Å AlSb/48 Å GaSb/21 Å AlSb/43 Å InAs/12 Å AlSb/33 Å InAs/12 Å AlSb/27 Å.

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Fig. 1. Schematic diagram of two ICL structures with different waveguides.

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Fig. 4. DCXRD patterns of wafer C582 with thinner InAs spacer layers and InAs/AlSb SL cladding layers.

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Fig. 3. DCXRD patterns of wafer C400 with thicker InAs spacer and cladding layers.

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Fig. 6. (Color online) Measured I–V–P characteristics of a narrow ridge laser (14.5 μm × 2 mm) from wafer C400 in cw mode.

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Fig. 5. (Color online) Temperature dependent emission spectra of a narrow ridge laser (14.5 μm × 2 mm) from wafer C400 in cw mode.

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Fig. 7. (Color online) Optical mode and refractive index profiles of wafers C400 and C582.

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Fig. 8. (Color online) Temperature dependent emission spectra of a wide ridge laser (70 μm × 3 mm) from wafer C582 in pulsed mode.

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Fig. 9. (Color online) Measured I–V–P characteristics of a narrow ridge laser (18 μm × 3 mm) from wafer C582 in cw mode.

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[1]	Faist J, Capasso F, Sivco D L, et al. Quantum cascade laser. Science, 1994, 264: 553 doi: 10.1126/science.264.5158.553
[2]	Vitiello M S, Scalari G, Williams B, et al. Quantum cascade lasers: 20 years of challenges. Opt Express, 2015, 23: 5167 doi: 10.1364/OE.23.005167
[3]	Hou C C, Zhao Y, Zhang J C, et al. Room temperature continuous wave operation of quantum cascade laser at λ ~ 9.4 μm. J Semicond, 2018, 39: 034001 doi: 10.1088/1674-4926/39/3/034001
[4]	Ciaffoni L, Grilli R, Hancock G, et al. 3.5-μm high-resolution gas sensing employing a LiNbO₃ QPM–DFG waveguide module. Appl Phys B, 2008, 94: 517
[5]	Bauer A, Rössner K, Lehnhardt T, et al. Mid-infrared semiconductor heterostructure lasers for gas sensing applications. Semicond Sci Technol, 2011, 26: 014032 doi: 10.1088/0268-1242/26/1/014032
[6]	Bandyopadhyay N, Slivken S, Bai Y, et al. High power, continuous wave, room temperature operation of λ ~ 3.4 μm and λ~3.55 μm InP-based quantum cascade lasers. Appl Phys Lett, 2012, 100: 212104 doi: 10.1063/1.4719110
[7]	Bandyopadhyay N, Bai Y, Gokden B, et al. Watt level performance of quantum cascade lasers in room temperature continuous wave operation at λ ~ 3.76 μm. Appl Phys Lett, 2010, 97: 131117 doi: 10.1063/1.3496489
[8]	Yang R Q. Infrared laser based on intersubband transitions in quantum well. Superlattices Microstruct, 1995, 17: 77 doi: 10.1006/spmi.1995.1017
[9]	Kim M, Bewley W W, Canedy C L, et al. High-power continuous-wave interband cascade lasers with 10 active stages. Opt Express, 2015, 23: 9664 doi: 10.1364/OE.23.009664
[10]	Vurgaftman I, Bewley W W, Canedy C L, et al. Rebalancing of internally generated carriers for mid-infrared cascade lasers with very low power consumption. Nature Commun, 2011, 2: 585 doi: 10.1038/ncomms1595
[11]	Edlinger M, Weih R, Scheuermann J, et al. Monolithic single mode interband cascade lasers with wide wavelength tunability. Appl Phys Lett, 2016, 109: 201109 doi: 10.1063/1.4968535
[12]	Weih R, Nähle L, Höfling S, et al. Single mode interband cascade lasers based on lateral metal gratings. Appl Phys Lett, 2014, 105: 071111 doi: 10.1063/1.4893788
[13]	Yang R Q, Li L, Zhao L, et al. Recent progress in development of InAs-based interband cascade lasers. Proc SPIE, 2013, 8640: 86400Q doi: 10.1117/12.2005271
[14]	Li L, Jiang Y, Ye H, et al. Low-threshold InAs-based interband cascade lasers operating at high temperatures. Appl Phys Lett, 2015, 106: 251102 doi: 10.1063/1.4922995
[15]	Tian Z, Yang R Q, Mishima T D, et al. InAs-based interband cascade lasers near 6 μm. Electron Lett, 2008, 45: 48
[16]	Rassel S M S, Li L, Li Y, et al. High-temperature and low-threshold interband cascade lasers at wavelengths longer than 6 μm. Opt Eng, 2018, 57: 011021
[17]	Dallner M, Hau F, Höfling S, et al. InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm² at room temperature. Appl Phys Lett, 2015, 106: 041108 doi: 10.1063/1.4907002
[18]	Tian Z, Li L, Ye H, et al. InAs-based interband cascade lasers with emission wavelength at 10.4 μm. Electron Lett, 2012, 48: 113 doi: 10.1049/el.2011.3555

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Received: 28 May 2018 Revised: 27 June 2018 Online: Uncorrected proof: 13 September 2018Published: 01 November 2018

Article Navigation > Journal of Semiconductors > 2018 > 39(11): 114003

Tian Yu, Shuman Liu, Jinchuan Zhang, Bo Xu, Lijun Wang, Junqi Liu, Ning Zhuo, Shenqiang Zhai, Xiaoling Ye, Yonghai Chen, Fengqi Liu, Zhanguo Wang. InAs-based interband cascade lasers at 4.0 μm operating at room temperature[J]. Journal of Semiconductors, 2018, 39(11): 114003. doi: 10.1088/1674-4926/39/11/114003 ****T Yu, S M Liu, J C Zhang, B Xu, L J Wang, J Q Liu, N Zhuo, S Q Zhai, X L Ye, Y H Chen, F Q Liu, Z G Wang, InAs-based interband cascade lasers at 4.0 μm operating at room temperature[J]. J. Semicond., 2018, 39(11): 114003. doi: 10.1088/1674-4926/39/11/114003.

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T Yu, S M Liu, J C Zhang, B Xu, L J Wang, J Q Liu, N Zhuo, S Q Zhai, X L Ye, Y H Chen, F Q Liu, Z G Wang, InAs-based interband cascade lasers at 4.0 μm operating at room temperature[J]. J. Semicond., 2018, 39(11): 114003. doi: 10.1088/1674-4926/39/11/114003.

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InAs-based interband cascade lasers at 4.0 μm operating at room temperature

doi: 10.1088/1674-4926/39/11/114003

1.
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
2.
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101804, China

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Project supported by the National Natural Science Foundation of China (Nos. 61790583, 61774150, 61774151) and the National Basic Research Program of China (No. 2014CB643903).

More Information

Corresponding author: Email: liusm@semi.ac.cn; fqliu@semi.ac.cn
Received Date: 2018-05-28
Revised Date: 2018-06-27
Published Date: 2018-11-01

Abstract

Abstract

InAs-based interband cascade lasers (ICLs) with InAs plasmon waveguides or InAs/AlSb superlattice (SL) waveguides were demonstrated at emission wavelengths below 4.1 μm. The threshold current densities of the lasers with SL waveguides were 37 A/cm² at 77 K in continuous wave mode. The operation temperature of these lasers reached room temperature in pulsed mode. Compared with the thick InAs n⁺⁺ plasmon cladding layer, the InAs/AlSb superlattice cladding layers have greater advantages for ICLs with wavelengths less than 4 μm even in InAs based ICLs because in the short-wavelength region they have a higher confinement factor than InAs plasmon waveguides.
- interband cascade laser,
- InAs-based,
- InAs/AlSb superlattice

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References(18)

References

[1]	Faist J, Capasso F, Sivco D L, et al. Quantum cascade laser. Science, 1994, 264: 553 doi: 10.1126/science.264.5158.553
[2]	Vitiello M S, Scalari G, Williams B, et al. Quantum cascade lasers: 20 years of challenges. Opt Express, 2015, 23: 5167 doi: 10.1364/OE.23.005167
[3]	Hou C C, Zhao Y, Zhang J C, et al. Room temperature continuous wave operation of quantum cascade laser at λ ~ 9.4 μm. J Semicond, 2018, 39: 034001 doi: 10.1088/1674-4926/39/3/034001
[4]	Ciaffoni L, Grilli R, Hancock G, et al. 3.5-μm high-resolution gas sensing employing a LiNbO₃ QPM–DFG waveguide module. Appl Phys B, 2008, 94: 517
[5]	Bauer A, Rössner K, Lehnhardt T, et al. Mid-infrared semiconductor heterostructure lasers for gas sensing applications. Semicond Sci Technol, 2011, 26: 014032 doi: 10.1088/0268-1242/26/1/014032
[6]	Bandyopadhyay N, Slivken S, Bai Y, et al. High power, continuous wave, room temperature operation of λ ~ 3.4 μm and λ~3.55 μm InP-based quantum cascade lasers. Appl Phys Lett, 2012, 100: 212104 doi: 10.1063/1.4719110
[7]	Bandyopadhyay N, Bai Y, Gokden B, et al. Watt level performance of quantum cascade lasers in room temperature continuous wave operation at λ ~ 3.76 μm. Appl Phys Lett, 2010, 97: 131117 doi: 10.1063/1.3496489
[8]	Yang R Q. Infrared laser based on intersubband transitions in quantum well. Superlattices Microstruct, 1995, 17: 77 doi: 10.1006/spmi.1995.1017
[9]	Kim M, Bewley W W, Canedy C L, et al. High-power continuous-wave interband cascade lasers with 10 active stages. Opt Express, 2015, 23: 9664 doi: 10.1364/OE.23.009664
[10]	Vurgaftman I, Bewley W W, Canedy C L, et al. Rebalancing of internally generated carriers for mid-infrared cascade lasers with very low power consumption. Nature Commun, 2011, 2: 585 doi: 10.1038/ncomms1595
[11]	Edlinger M, Weih R, Scheuermann J, et al. Monolithic single mode interband cascade lasers with wide wavelength tunability. Appl Phys Lett, 2016, 109: 201109 doi: 10.1063/1.4968535
[12]	Weih R, Nähle L, Höfling S, et al. Single mode interband cascade lasers based on lateral metal gratings. Appl Phys Lett, 2014, 105: 071111 doi: 10.1063/1.4893788
[13]	Yang R Q, Li L, Zhao L, et al. Recent progress in development of InAs-based interband cascade lasers. Proc SPIE, 2013, 8640: 86400Q doi: 10.1117/12.2005271
[14]	Li L, Jiang Y, Ye H, et al. Low-threshold InAs-based interband cascade lasers operating at high temperatures. Appl Phys Lett, 2015, 106: 251102 doi: 10.1063/1.4922995
[15]	Tian Z, Yang R Q, Mishima T D, et al. InAs-based interband cascade lasers near 6 μm. Electron Lett, 2008, 45: 48
[16]	Rassel S M S, Li L, Li Y, et al. High-temperature and low-threshold interband cascade lasers at wavelengths longer than 6 μm. Opt Eng, 2018, 57: 011021
[17]	Dallner M, Hau F, Höfling S, et al. InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm² at room temperature. Appl Phys Lett, 2015, 106: 041108 doi: 10.1063/1.4907002
[18]	Tian Z, Li L, Ye H, et al. InAs-based interband cascade lasers with emission wavelength at 10.4 μm. Electron Lett, 2012, 48: 113 doi: 10.1049/el.2011.3555

InAs-based interband cascade lasers at 4.0 μm operating at room temperature

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