Fig. 1.
(Color online) (a) Schematic, cross-sectional view of the high speed VCSEL. (b) Microscope image of fully processed VCSEL on wafer.
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| Citation: |
Shuai Hu, Xiaoying He, Yan He, Jiale Su, Chong Li, Anqi Hu, Xia Guo. Impact of damping on high speed 850 nm VCSEL performance[J]. Journal of Semiconductors, 2018, 39(11): 114006. doi: 10.1088/1674-4926/39/11/114006
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S Hu, X Y He, Y He, J L Su, C Li, A Q Hu, X Guo, Impact of damping on high speed 850 nm VCSEL performance[J]. J. Semicond., 2018, 39(11): 114006. doi: 10.1088/1674-4926/39/11/114006.
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Impact of damping on high speed 850 nm VCSEL performance
doi: 10.1088/1674-4926/39/11/114006
More Information-
Abstract
High speed VCSELs are important optical devices in short-reach optical communication links and interconnects because of their low cost and high modulation speeds. In this paper, the impact of damping on the their static and dynamic characteristics is analyzed and demonstrated. Through the shallow corrosion of the top layer DBR, the VCSELs with different damping is designed and fabricated. With the increase of the surface etch depth from 0 to ~55 nm for 9 μm oxide-aperture VCSEL, the K factor related with the damping is reduced from 0.31 to 0.23 ns−1. When the etch depth of the VCSEL with 9 μm oxide-aperture is decreased to ~25 nm, output power is increased from 4.03 to 4.70 mW and small signal modulation bandwidth is also increased from 15.46 to 16.37 GHz. It shows that there is a tradeoff between damping and differential gain for improving modulation speed. -
References
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