Fig. 1.
(Color online) Microcavity structure of electrode: (a) high voltage electrode, (b) ground electrode, (c) single microcavity and (d) electrode section of A, C.
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| Citation: |
Yanzhou Sun, Xiaoqian Liu, Dati Su, Huibin Yang. Memory characteristics of microcavity dielectric barrier discharge[J]. Journal of Semiconductors, 2018, 39(11): 114008. doi: 10.1088/1674-4926/39/11/114008
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Y Z Sun, X Q Liu, D T Su, H B Yang, Memory characteristics of microcavity dielectric barrier discharge[J]. J. Semicond., 2018, 39(11): 114008. doi: 10.1088/1674-4926/39/11/114008.
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Memory characteristics of microcavity dielectric barrier discharge
doi: 10.1088/1674-4926/39/11/114008
More Information-
Abstract
The nonlinear resistance characteristics of microcavity dielectric barrier discharge are mainly studied in the paper. A simulation model of microcavity dielectric barrier discharge is herein built to study the relationship between voltage and current in the process of discharge, and thus its I–V characteristic curve can be obtained. The I–V characteristics of the memristor are analyzed and compared with the I–V characteristics of the dielectric barrier discharge; it can be found that the I–V characteristics of the microcavity dielectric barrier discharge are similar to the characteristics of the memristor by analyzing them. The memory characteristics of microcavity dielectric barrier discharge are further analyzed. -
References
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