Fig. 1.
X-ray diffraction spectrum of the Cu/CdS structure.
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| Citation: |
R. Jayakrishnan, Varun G Nair, Akhil M Anand, Meera Venugopal. Gas selectivity of SILAR grown CdS nano-bulk junction[J]. Journal of Semiconductors, 2018, 39(3): 033002. doi: 10.1088/1674-4926/39/3/033002
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R Jayakrishnan, V G Nair, A M Anand, M Venugopal, Gas selectivity of SILAR grown CdS nano-bulk junction[J]. J. Semicond., 2018, 39(3): 033002. doi: 10.1088/1674-4926/39/3/033002.
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Gas selectivity of SILAR grown CdS nano-bulk junction
doi: 10.1088/1674-4926/39/3/033002
More Information-
Abstract
Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric conditions. The gas response ratio was found to be 198% for Oxygen and 34% for Hydrogen at room temperature. An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio. A logarithmic dependence on the oxygen partial pressure to the junction response was observed, indicating a Temkin isothermal behavior. Work function measurements using a Kelvin probe demonstrate that the exposure to an oxygen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface. Based on the benefits like simple structure, ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications. -
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