Fig. 1.
Circuit schematic of PNP type Darlington transistor.
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Qiankun Wang, Changchun Chai, Yuqian Liu, Yintang Yang. The influence of pulsed parameters on the damage of a Darlington transistor[J]. Journal of Semiconductors, 2018, 39(9): 094005. doi: 10.1088/1674-4926/39/9/094005
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Q K Wang, C C Chai, Y Q Liu, Y T Yang, The influence of pulsed parameters on the damage of a Darlington transistor[J]. J. Semicond., 2018, 39(9): 094005. doi: 10.1088/1674-4926/39/9/094005.
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The influence of pulsed parameters on the damage of a Darlington transistor
DOI: 10.1088/1674-4926/39/9/094005
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Abstract
Theoretical research on the heat accumulation effect of a Darlington transistor induced by high power microwave is conducted, and temperature variation as functions of pulse repetitive frequency (PRF) and duty cycle (DC) are studied. According to the distribution of the electronic field and the current density in the Darlington transistor, the research of the damage mechanism is carried out. The results show that for repetitive pulses with the same pulse widths and different PRFs, the value of temperature variation increases with PRF increases, and the peak temperature has almost no change when PRF is lower than 200 kHz; while for the repetitive pulses with the same PRF and different pulse widths, the larger the pulse width is, the greater temperature variation varies. The response of the peak temperature caused by a single pulse demonstrates that there is no temperature variation when the rising time is much shorter than the falling time. In addition, the relationship between the temperature variation and the time during the rising edge time as well as that between the temperature variation and the time during the falling edge time are obtained utilizing the curve fitting method. Finally, for a certain average power, with DC increases the value of temperature variation decreases. -
References
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