Citation: |
Wenyu Yang, Yajie Li, Fangyuan Meng, Hongyan Yu, Mengqi Wang, Pengfei Wang, Guangzhen Luo, Xuliang Zhou, Jiaoqing Pan. III–V compound materials and lasers on silicon[J]. Journal of Semiconductors, 2019, 40(10): 101305. doi: 10.1088/1674-4926/40/10/101305
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W Y Yang, Y J Li, F Y Meng, H Y Yu, M Q Wang, P F Wang, G Z Luo, X L Zhou, J Q Pan, III–V compound materials and lasers on silicon[J]. J. Semicond., 2019, 40(10): 101305. doi: 10.1088/1674-4926/40/10/101305.
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Abstract
Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility. Breakthroughs have been made in silicon-based integrated lasers over the past few decades. Here we review three main methods of integration of III–V materials on Si, namely direct growth, bonding, and selective-area hetero-epitaxy. The III–V materials we introduced mainly include materials such as GaAs and InP. The lasers are mainly lasers of related communication bands. We also introduced the advantages and challenges of the three methods.-
Keywords:
- integrated photonics,
- hybrid laser,
- silicon
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References
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