J. Semicond. > 2019, Volume 40 > Issue 4 > 041901
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REVIEWS

Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites

Haizhen Wang1, 2, Chen Fang1, Hongmei Luo2, and Dehui Li1,

+ Author Affiliations

 Corresponding author: Hongmei Luo, Email: hluo@nmsu.edu; Dehui Li, Email: dehuili@hust.edu.cn

DOI: 10.1088/1674-4926/40/4/041901

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Abstract: Two-dimensional (2D) hybrid organic-inorganic perovskites have recently attracted attention due to their layered nature, naturally formed quantum well structure, large exciton binding energy and especially better long-term environmental stability compared with their three-dimensional (3D) counterparts. In this report, we present a brief overview of the recent progress of the optoelectronic applications in 2D perovskites. The layer number dependent physical properties of 2D perovskites will first be introduced and then the different synthetic approaches to achieve 2D perovskites with different morphologies will be discussed. The optical, optoelectronic properties and self-trapped states in 2D perovskites will be described, which are indispensable for designing the new device structures with novel functionalities and improving the device performance. Subsequently, a brief summary of the advantages and the current research status of the 2D perovskite-based heterostructures will be illustrated. Finally, a perspective of 2D perovskite materials is given toward their material synthesis and novel device applications.

Key words: 2D perovskite, optoelectronics, self-trapped exciton, heterostructures



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Fig. 1.  (Color online) (a) The schematic illustration of the crystal structures of 2D perovskite (BA)2(MA)n−1PbnI3n+1 for n = 1 to ∞. (b) The structure schematic illustration and stability of 2D perovskite (PEA)2MAn−1PbnI3n+1 for n = 1 to ∞. (c) The layer number n-dependent power conversion efficiency as well as device performance and stability of (PEA)2MAn−1PbnI3n+1. Panel (a) adapted with permission from Ref. [38]. Copyright 2018, Institute of Physics (Great Britain). Panels (b) and (c) adapted with permission from Ref. [50]. Copyright 2016, American Chemical Society.

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Fig. 2.  (Color online) (a) Scanning electron microscopy (SEM) images of (BA)2(MA)n−1PbnI3n+1 perovskite crystals. The scale bars are 200 μm. (b) Photographs of (BA)2(MA)n−1PbnI3n+1 perovskite films. (c) Optical microscopy (OM) images of the as-exfoliated (BA)2(MA)n−1PbnI3n+1 perovskite microplates. The scale bars are 15 μm. (d) OM image of (BA)2PbBr4 square microplates grown on Si substrate via a solution-phase growth method. The scale bar is 10 μm. (e) OM image of (BA)2(MA)Pb2I7 square plates grown on Si substrate via a spin-coating method. The scale bar is 5 μm. (f) OM image of (BA)2PbI4 flakes grown on mica substrate via a co-evaporation method. The scale bar is 5 μm. (g) OM image of the converted (BA)2Pbl4−xClx microplate array on Si via a vapor phase intercalation method. The scale bar is 20 μm. Panel (a) adapted with permission from Ref. [33]. Copyright 2016, American Chemical Society. Panel (b) adapted with permission from Ref. [40]. Copyright 2015, American Chemical Society. Panel (d) adapted with permission from Ref. [67]. Copyright 2015, The American Association for the Advancement of Science. Panel (e) adapted with permission from Ref. [68]. Copyright 2018, Royal Society of Chemistry (Great Britain). Panel (f) adapted with permission from Ref. [69]. Copyright 2017, John Wiley and Sons. Panel (g) adapted with permission from Ref. [70]. Copyright 2018, American Chemical Society.

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Fig. 3.  (Color online) (a) Normalized PL spectra of the as-exfoliated (BA)2(MA)n−1PbnI3n+1 microplates for n = 1–5 with thickness below 20 nm. (b) Normalized absorption spectra of the as-synthesized (BA)2(MA)n−1PbnI3n+1 plates for n = 1–5. (d) The current–voltage curves of the (BA)2(MA)2Pb3I10 device in dark and under illumination with a 528-nm LED. Inset shows the schematic of the two-probe device. The incident power is 30 μW/cm2. (d) Spectral response of the graphene-(BA)2PbBr4-graphene device under a fixed incident power. The schematic of the as-fabricated device is shown in the inset. (e) Electroluminescence spectra of the (PEA)2MAn−1PbnI3n+1 perovskite films with different n values. (f) Carrier transfer process in (PEA)2MA4Pb5I16 perovskite film. (g) Energy funneling process of (PEA)2MA4Pb5I16 films. Panels (a)–(c) adapted with permission from Ref. [38]. Copyright 2018, Institute of Physics (Great Britain). Panel (d) adapted with permission from Ref. [42]. Copyright 2016, American Chemical Society. Panels (e)–(g) adapted with permission from Ref. [60]. Copyright 2016, Springer Nature.

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Fig. 4.  (Color online) (a) PL spectra of different 2D hybrid perovskites: (i) (BA)2PbCl4, (ii) (BA)2PbBr4, (iii) (BA)2PbI4, (iv) (BA)2PbCl2Br2, (v) BA)2PbBr2I2 and (vi) (BA)2(MA)Pb2Br7 2D microplates and their corresponding PL images as shown in the inset. The scale bars are 2 μm for (i) to (v) and 10 μm for (vi). (b) Transient absorption spectrum of (BA)2PbI4 at room temperature. (c) PL spectra of the (PEA)2PbI4 thin film and single crystal plotted as black and blue dash line, respectively. The inset shows the spectra on a logarithmic scale. Panel (a) adapted with permission from Ref. [67]. Copyright 2015, The American Association for the Advancement of Science. Panel (b) adapted with permission from Ref. [80]. Copyright 2015, American Chemical Society. Panel (c) adapted with permission from Ref. [81]. Copyright 2016, American Chemical Society.

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Fig. 5.  (Color online) (a) Schematic illustrations of crystal structure of (BA)2PbI4/(BA)2MAPb2I7 lateral and vertical heterostructures. (b, c) Photographs of the (BA)2PbI4/(BA)2MAPb2I7 lateral and vertical heterostructures, respectively. The boundary of lateral heterostructure are shown in Fig. 5(b) plotted as dotted line, whereas the yellow color portion represents (BA)2PbI4 and the red color portion represents (BA)2MAPb2I7 2D perovskites. (d) OM image of the (BA)2PbI4/(BA)2MAPb2I7 lateral heterostructure. Scale bar: 20 μm. (e) SEM image of (BA)2PbI4/(BA)2MAPb2I7 lateral heterostructure. Scale bar: 30 μm. Inset: the magnified SEM image with a scale bar of 3 μm. (f, g) Normalized absorption and PL spectra of (BA)2PbI4/(BA)2MAPb2I7 vertical and lateral heterostructures, respectively. (h, i) I–V curves of the (BA)2PbI4/(BA)2MAPb2I7 lateral and vertical heterostructure devices in dark and under 1.4 mW/cm2 white light illumination. Adapted with permission from Ref. [84]. Copyright 2017, American Chemical Society.

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    Received: 18 January 2019 Revised: 22 February 2019 Online: Accepted Manuscript: 27 February 2019Uncorrected proof: 04 March 2019Published: 08 April 2019

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      Article Navigation >  Journal of Semiconductors  > 2019  >  40(4): 041901
      Haizhen Wang, Chen Fang, Hongmei Luo, Dehui Li. Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites[J]. Journal of Semiconductors, 2019, 40(4): 041901. doi: 10.1088/1674-4926/40/4/041901 ****H Z Wang, C Fang, H M Luo, D H Li, Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites[J]. J. Semicond., 2019, 40(4): 041901. doi: 10.1088/1674-4926/40/4/041901.
      Citation:
      Haizhen Wang, Chen Fang, Hongmei Luo, Dehui Li. Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites[J]. Journal of Semiconductors, 2019, 40(4): 041901. doi: 10.1088/1674-4926/40/4/041901 ****
      H Z Wang, C Fang, H M Luo, D H Li, Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites[J]. J. Semicond., 2019, 40(4): 041901. doi: 10.1088/1674-4926/40/4/041901.
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      Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites

      DOI: 10.1088/1674-4926/40/4/041901
      • 1.

        School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

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        Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, NM 88003, United States of America

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