Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

Guiying Shen; Youwen Zhao; Yongbiao Bai; Jingming Liu; Hui Xie; Zhiyuan Dong; Jun Yang; Ding Yu

doi:10.1088/1674-4926/40/4/042101

J. Semicond. > 2019, Volume 40 > Issue 4 > 042101

ARTICLES

Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

Guiying Shen¹, Youwen Zhao^{1, 2}, Yongbiao Bai^1,, Jingming Liu¹, Hui Xie¹, Zhiyuan Dong¹, Jun Yang¹ and Ding Yu^{1, 2}

+ Author Affiliations

Corresponding author: Yongbiao Bai, baiyongbiao@semi.ac.cn

DOI: 10.1088/1674-4926/40/4/042101

Abstract: Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.

Key words: Te-doped GaSb, Hall, native defects, PL

References

[1]	Dutta P S, Bhat H L, Kumar V. The physics and technology of gallium antimonide: An emerging optoelectronic material. J Appl Phys, 1997, 81, 5821 doi: 10.1063/1.365356
[2]	Zia N, Viheriälä J, Koskinen R, et al. High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element. Appl Phys Lett, 2016, 109, 231102 doi: 10.1063/1.4971972
[3]	Zhou X, Li D, Huang J, et al. Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays. Infrared Phys Technol, 2016, 78, 263 doi: 10.1016/j.infrared.2016.08.014
[4]	Haugan H J, Brown G J, Szmulowicz F, et al. InAs/GaSb type-II superlattices for high performance mid-infrared detectors. J Cryst Growth, 2005, 278, 198 doi: 10.1016/j.jcrysgro.2005.01.006
[5]	Su J, Liu T, Liu J M, et al. Thermally induced native defect transform in annealed GaSb. Chin Phys B, 2016, 25, 077801 doi: 10.1088/1674-1056/25/7/077801
[6]	Kujala J, Segercrantz N, Tuomisto F, et al. Native point defects in GaSb. J Appl Phys, 2014, 116, 143508 doi: 10.1063/1.4898082
[7]	Segercrantz N, Slotte J, Makkonen I, et al. Point defect balance in epitaxial GaSb. Appl Phys Lett, 2014, 105, 082113 doi: 10.1063/1.4894473
[8]	Tahini H A, Chroneos A, Murphy S T, et al. Vacancies and defect levels in III–V semiconductors. J Appl Phys, 2013, 114, 063517 doi: 10.1063/1.4818484
[9]	Vlasov A S, Rakova E P, Khvostikov V P, et al. Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence. Sol Energ Mat Sol C, 2010, 94, 1113 doi: 10.1016/j.solmat.2010.02.038
[10]	Hu W G, Wang Z, Su B F, et al. Gallium antisite defect and residual acceptors in undoped GaSb. Phys Lett A, 2004, 332, 286 doi: 10.1016/j.physleta.2004.09.056
[11]	Rudolph P, Czupalla M, Lux B. LEC growth of semi-insulating GaAs crystals in traveling magnetic field generated in a heater–magnet module. J Cryst Growth, 2009, 311, 4543 doi: 10.1016/j.jcrysgro.2009.08.024
[12]	Houchens B C, Becla P, Tritchler S E, et al. Crystal growth of bulk ternary semiconductors: comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method. J Cryst Growth, 2010, 312, 1091 doi: 10.1016/j.jcrysgro.2009.12.051
[13]	Mo P G, Tan H Z, Du L X, et al. A novel technique for Czochralski growth of GaSb single crystals. J Cryst Growth, 1993, 126, 613 doi: 10.1016/0022-0248(93)90811-A
[14]	Pino R, Ko Y, Dutta P S. Enhancement of infrared transmission in GaSb bulk crystals by carrier compensation. J Appl Phys, 2004, 96, 1064 doi: 10.1063/1.1738527
[15]	Bai Y B, Zhao Y W, Shen G Y, et al. N-type GaSb single crystals with high below-band gap transmission. Chin Phys B, 2017, 26, 107801 doi: 10.1088/1674-1056/26/10/107801
[16]	Chandola A, Pino R, Dutta P S. Below bandgap optical absorption in tellurium-doped GaSb. Semicond Sci Technol, 2005, 20, 886 doi: 10.1088/0268-1242/20/8/046
[17]	Bignazzi A, Bosacchi A, Magnanini R. Photoluminescence study of heavy doping effects in Te-doped GaSb. J Appl Phys, 1997, 81, 7540 doi: 10.1063/1.365297
[18]	Wu M C, Chen C C. Photoluminescence of liquid-phase epitaxial Te-doped GaSb. J Appl Phys, 1993, 73, 8495 doi: 10.1063/1.354085
[19]	Dutta P S, Rao K S R K, Bhat H L, et al. Photoluminescence studies in bulk gallium antimonide. Appl Phys A, 1995, 61, 149 doi: 10.1007/BF01538381
[20]	Jiang W J, Sun Y M, Wu M C. Electrical and photoluminescent properties of high-quality GaSb and AlGaSb layers grown from Sb-rich solutions by liquid-phase epitaxy. J Appl Phys, 1995, 77, 1725 doi: 10.1063/1.359576

Fig. 2. (Color online) PL spectra of sample 2 at 10 K.

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Fig. 1. (Color online) PL spectra of p-type GaSb samples measured at 10 K.

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Fig. 4. (Color online) PL spectra of samples 5, 6 and 7 at 10 K.

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Fig. 3. (Color online) PL spectra of samples 1, 3 and 4 at 10 K.

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Table 1. Hall results of n-type Te-GaSb sample at room temperature.

Sample No.	Mobility (cm²/(V·s))	Carrier concentration (cm⁻³)	Type
1	2.34 × 10³	1.66 × 10¹⁶	n
2	2.83 × 10³	2.79 × 10¹⁶	n
3	2.94 × 10³	5.24 × 10¹⁶	n
4	2.96 × 10³	6.63 × 10¹⁶	n
5	3.04 × 10³	7.84 × 10¹⁶	n
6	3.34 × 10³	1.14 × 10¹⁷	n
7	3.24 × 10³	1.38 × 10¹⁷	n
8	6.41 × 10²	1.41 × 10¹⁷	p
9	7.39 × 10²	1.14 × 10¹⁷	p

DownLoad: CSV

Table 2. The PL peak position and related transition of GaSb reported in the literature.

Energy (meV)	Transition	Quota
812	Band gap	Ref. [19] (4.2 K)
810	Free exciton	Ref. [20] (20 K)
808	Excitonic transition	Ref. [18] (19 K)
802	Donor-acceptor transition	Ref. [19] (4.2 K)
797	Excitonic transition	Ref. [18] (19 K)
796, 792	Exciton band to (V_Ga GaSb)⁰	Ref. [19] (4.2 K)
781	C-(V_Ga GaSb)⁰	Ref. [19] (4.2 K)
777	D⁺-(V_Ga GaSb)⁰	Ref. [19] (4.2 K)
765	LO phonon replica of 796 meV transition	Ref. [18] (19 K)
760	Acceptor B	Ref. [18] (19 K)
756	Exciton band to GaSb	Ref. [5] (10 K)
746, 740	LO phonon replica of 777 meV	Ref. [19] (4.2 K)
738	C-(V_Ga GaSb Te_Sb)	Ref. [18] (19 K)
710	C-(V_Ga GaSb)	Ref. [19] (4.2 K)
682	LO phonon replica of 710 meV	Ref. [19] (4.2 K)

DownLoad: CSV

Table 3. The position (meV) and intensity (a.u.) of resolved peak G, C and T.

Sample No.	Peak position	Strength of peak G	Peak position	Strength of peak C	Peak position	Strength of peak T
1	665	0.65	683	1.26	703	1.73
2	664	0.52	683	1.43	706	1.68
3	664	0.43	685	1.52	708	1.53
4	665	0.42	686	1.58	707	1.56
5	666	0.12	692	0.92	712	1.59
6	–	–	700	0.83	721	1.76
7	–	–	712	0.75	732	1.98

DownLoad: CSV

[1]	Dutta P S, Bhat H L, Kumar V. The physics and technology of gallium antimonide: An emerging optoelectronic material. J Appl Phys, 1997, 81, 5821 doi: 10.1063/1.365356
[2]	Zia N, Viheriälä J, Koskinen R, et al. High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element. Appl Phys Lett, 2016, 109, 231102 doi: 10.1063/1.4971972
[3]	Zhou X, Li D, Huang J, et al. Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays. Infrared Phys Technol, 2016, 78, 263 doi: 10.1016/j.infrared.2016.08.014
[4]	Haugan H J, Brown G J, Szmulowicz F, et al. InAs/GaSb type-II superlattices for high performance mid-infrared detectors. J Cryst Growth, 2005, 278, 198 doi: 10.1016/j.jcrysgro.2005.01.006
[5]	Su J, Liu T, Liu J M, et al. Thermally induced native defect transform in annealed GaSb. Chin Phys B, 2016, 25, 077801 doi: 10.1088/1674-1056/25/7/077801
[6]	Kujala J, Segercrantz N, Tuomisto F, et al. Native point defects in GaSb. J Appl Phys, 2014, 116, 143508 doi: 10.1063/1.4898082
[7]	Segercrantz N, Slotte J, Makkonen I, et al. Point defect balance in epitaxial GaSb. Appl Phys Lett, 2014, 105, 082113 doi: 10.1063/1.4894473
[8]	Tahini H A, Chroneos A, Murphy S T, et al. Vacancies and defect levels in III–V semiconductors. J Appl Phys, 2013, 114, 063517 doi: 10.1063/1.4818484
[9]	Vlasov A S, Rakova E P, Khvostikov V P, et al. Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence. Sol Energ Mat Sol C, 2010, 94, 1113 doi: 10.1016/j.solmat.2010.02.038
[10]	Hu W G, Wang Z, Su B F, et al. Gallium antisite defect and residual acceptors in undoped GaSb. Phys Lett A, 2004, 332, 286 doi: 10.1016/j.physleta.2004.09.056
[11]	Rudolph P, Czupalla M, Lux B. LEC growth of semi-insulating GaAs crystals in traveling magnetic field generated in a heater–magnet module. J Cryst Growth, 2009, 311, 4543 doi: 10.1016/j.jcrysgro.2009.08.024
[12]	Houchens B C, Becla P, Tritchler S E, et al. Crystal growth of bulk ternary semiconductors: comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method. J Cryst Growth, 2010, 312, 1091 doi: 10.1016/j.jcrysgro.2009.12.051
[13]	Mo P G, Tan H Z, Du L X, et al. A novel technique for Czochralski growth of GaSb single crystals. J Cryst Growth, 1993, 126, 613 doi: 10.1016/0022-0248(93)90811-A
[14]	Pino R, Ko Y, Dutta P S. Enhancement of infrared transmission in GaSb bulk crystals by carrier compensation. J Appl Phys, 2004, 96, 1064 doi: 10.1063/1.1738527
[15]	Bai Y B, Zhao Y W, Shen G Y, et al. N-type GaSb single crystals with high below-band gap transmission. Chin Phys B, 2017, 26, 107801 doi: 10.1088/1674-1056/26/10/107801
[16]	Chandola A, Pino R, Dutta P S. Below bandgap optical absorption in tellurium-doped GaSb. Semicond Sci Technol, 2005, 20, 886 doi: 10.1088/0268-1242/20/8/046
[17]	Bignazzi A, Bosacchi A, Magnanini R. Photoluminescence study of heavy doping effects in Te-doped GaSb. J Appl Phys, 1997, 81, 7540 doi: 10.1063/1.365297
[18]	Wu M C, Chen C C. Photoluminescence of liquid-phase epitaxial Te-doped GaSb. J Appl Phys, 1993, 73, 8495 doi: 10.1063/1.354085
[19]	Dutta P S, Rao K S R K, Bhat H L, et al. Photoluminescence studies in bulk gallium antimonide. Appl Phys A, 1995, 61, 149 doi: 10.1007/BF01538381
[20]	Jiang W J, Sun Y M, Wu M C. Electrical and photoluminescent properties of high-quality GaSb and AlGaSb layers grown from Sb-rich solutions by liquid-phase epitaxy. J Appl Phys, 1995, 77, 1725 doi: 10.1063/1.359576

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Received: 09 March 2018 Revised: 25 January 2019 Online: Accepted Manuscript: 16 February 2019Uncorrected proof: 22 February 2019Published: 08 April 2019

Article Navigation > Journal of Semiconductors > 2019 > 40(4): 042101

Guiying Shen, Youwen Zhao, Yongbiao Bai, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Ding Yu. Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals[J]. Journal of Semiconductors, 2019, 40(4): 042101. doi: 10.1088/1674-4926/40/4/042101 ****G Y Shen, Y W Zhao, Y B Bai, J M Liu, H Xie, Z Y Dong, J Yang, D Yu, Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals[J]. J. Semicond., 2019, 40(4): 042101. doi: 10.1088/1674-4926/40/4/042101.

Citation:

G Y Shen, Y W Zhao, Y B Bai, J M Liu, H Xie, Z Y Dong, J Yang, D Yu, Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals[J]. J. Semicond., 2019, 40(4): 042101. doi: 10.1088/1674-4926/40/4/042101.

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Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

DOI: 10.1088/1674-4926/40/4/042101

1.
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

More Information

Corresponding author: baiyongbiao@semi.ac.cn
Received Date: 2018-03-09
Revised Date: 2019-01-25
Published Date: 2019-04-01

Abstract

Abstract

Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.
- Te-doped GaSb,
- Hall,
- native defects,
- PL

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References(20)

References

[1]	Dutta P S, Bhat H L, Kumar V. The physics and technology of gallium antimonide: An emerging optoelectronic material. J Appl Phys, 1997, 81, 5821 doi: 10.1063/1.365356
[2]	Zia N, Viheriälä J, Koskinen R, et al. High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element. Appl Phys Lett, 2016, 109, 231102 doi: 10.1063/1.4971972
[3]	Zhou X, Li D, Huang J, et al. Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays. Infrared Phys Technol, 2016, 78, 263 doi: 10.1016/j.infrared.2016.08.014
[4]	Haugan H J, Brown G J, Szmulowicz F, et al. InAs/GaSb type-II superlattices for high performance mid-infrared detectors. J Cryst Growth, 2005, 278, 198 doi: 10.1016/j.jcrysgro.2005.01.006
[5]	Su J, Liu T, Liu J M, et al. Thermally induced native defect transform in annealed GaSb. Chin Phys B, 2016, 25, 077801 doi: 10.1088/1674-1056/25/7/077801
[6]	Kujala J, Segercrantz N, Tuomisto F, et al. Native point defects in GaSb. J Appl Phys, 2014, 116, 143508 doi: 10.1063/1.4898082
[7]	Segercrantz N, Slotte J, Makkonen I, et al. Point defect balance in epitaxial GaSb. Appl Phys Lett, 2014, 105, 082113 doi: 10.1063/1.4894473
[8]	Tahini H A, Chroneos A, Murphy S T, et al. Vacancies and defect levels in III–V semiconductors. J Appl Phys, 2013, 114, 063517 doi: 10.1063/1.4818484
[9]	Vlasov A S, Rakova E P, Khvostikov V P, et al. Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence. Sol Energ Mat Sol C, 2010, 94, 1113 doi: 10.1016/j.solmat.2010.02.038
[10]	Hu W G, Wang Z, Su B F, et al. Gallium antisite defect and residual acceptors in undoped GaSb. Phys Lett A, 2004, 332, 286 doi: 10.1016/j.physleta.2004.09.056
[11]	Rudolph P, Czupalla M, Lux B. LEC growth of semi-insulating GaAs crystals in traveling magnetic field generated in a heater–magnet module. J Cryst Growth, 2009, 311, 4543 doi: 10.1016/j.jcrysgro.2009.08.024
[12]	Houchens B C, Becla P, Tritchler S E, et al. Crystal growth of bulk ternary semiconductors: comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method. J Cryst Growth, 2010, 312, 1091 doi: 10.1016/j.jcrysgro.2009.12.051
[13]	Mo P G, Tan H Z, Du L X, et al. A novel technique for Czochralski growth of GaSb single crystals. J Cryst Growth, 1993, 126, 613 doi: 10.1016/0022-0248(93)90811-A
[14]	Pino R, Ko Y, Dutta P S. Enhancement of infrared transmission in GaSb bulk crystals by carrier compensation. J Appl Phys, 2004, 96, 1064 doi: 10.1063/1.1738527
[15]	Bai Y B, Zhao Y W, Shen G Y, et al. N-type GaSb single crystals with high below-band gap transmission. Chin Phys B, 2017, 26, 107801 doi: 10.1088/1674-1056/26/10/107801
[16]	Chandola A, Pino R, Dutta P S. Below bandgap optical absorption in tellurium-doped GaSb. Semicond Sci Technol, 2005, 20, 886 doi: 10.1088/0268-1242/20/8/046
[17]	Bignazzi A, Bosacchi A, Magnanini R. Photoluminescence study of heavy doping effects in Te-doped GaSb. J Appl Phys, 1997, 81, 7540 doi: 10.1063/1.365297
[18]	Wu M C, Chen C C. Photoluminescence of liquid-phase epitaxial Te-doped GaSb. J Appl Phys, 1993, 73, 8495 doi: 10.1063/1.354085
[19]	Dutta P S, Rao K S R K, Bhat H L, et al. Photoluminescence studies in bulk gallium antimonide. Appl Phys A, 1995, 61, 149 doi: 10.1007/BF01538381
[20]	Jiang W J, Sun Y M, Wu M C. Electrical and photoluminescent properties of high-quality GaSb and AlGaSb layers grown from Sb-rich solutions by liquid-phase epitaxy. J Appl Phys, 1995, 77, 1725 doi: 10.1063/1.359576

Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

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