J. Semicond. > 2019, Volume 40 > Issue 7 > 070101

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Preface to the Special Issue on Quantum Light Source from Semiconductors

Xiulai Xu1 and Jinshi Xu2

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DOI: 10.1088/1674-4926/40/7/070101

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The invention of laser has tremendously changed the world. Great efforts have been made to increase the laser power, in which each pulse contains many photons. On the other hand, researchers also play a lot of interests on the generation of a single photon in a single pulse, i.e., the single photon sources. Single photons and their strongly correlated components (e.g. entangled photons) have played critical roles in the development of quantum mechanics. Nowadays, these quantum light sources have also found important applications in modern quantum information processing, such as quantum communication, quantum metrology and quantum computation. Many different kinds of methods have been developed to generate these quantum light sources. Semiconductors are of particular appealing materials. They can provide a compact and robust way to generate quantum light source, which also offer great potential scalability enabled by the mature modern nanofabrication technologies. More and more flexible semiconductor quantum emitters are generated and investigated. Semiconductor quantum dots are widely used to generate single photons and entangle photons with very high quality. The intrinsic and implanted defects in bulk semiconductor material can provide stable single photons even at elevated temperature. The emitted wavelengths have been extended to the telecom range. Recently, great achievements have been obtained in improving their emission and collection efficiencies. Their abilities to interact with remoted quantum systems show the potentiality to construct a quantum network. The semiconductor quantum emitters are simulating novel applications and developing new quantum devices.

This special issue contains 6 review articles summarizing remarkable progress in quantum light generation and application using different semiconductor devices, such as zero-dimension quantum dots, one-dimension nanowires, two-dimension van der Waals materials and three-dimension bulk semiconductors. This special issue also contains 2 original articles on developing electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat, and observing stable single photon sources in the near C-band range above 400 K. The issue attempts to provide a latest overview of the rapidly developing research area of quantum light source from semiconductors.

We sincerely hope that this issue on quantum light source from semiconductors can benefit researchers on this topic. We would like to thank all the authors who have contributed high-quality peer-reviewed articles to this special issue. We are also grateful to the editorial and production staff of Journal of Semiconductors for their kind and prompt assistance.



1

Preface to Special Issue on Novel Semiconductor-biochemical Sensors

Zhao Li, Xiangmei Lin, Dongxian He, Yingxin Ma, Yuanjing Lin, et al.

Journal of Semiconductors, 2023, 44(2): 020101. doi: 10.1088/1674-4926/44/2/020101

2

Preface to the Special Issue on Semiconductor Optoelectronic Integrated Circuits

Wei Wang, Lingjuan Zhao, Dan Lu, Jianping Yao, Weiping Huang, et al.

Journal of Semiconductors, 2021, 42(4): 040101. doi: 10.1088/1674-4926/42/4/040101

3

n-Type acceptor–acceptor polymer semiconductors

Yongqiang Shi, Liming Ding

Journal of Semiconductors, 2021, 42(10): 100202. doi: 10.1088/1674-4926/42/10/100202

4

Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Xutang Tao, Jiandong Ye, Shibing Long, Zhitai Jia

Journal of Semiconductors, 2019, 40(1): 010101. doi: 10.1088/1674-4926/40/1/010101

5

Giant spin injection into semiconductor and THz pulse emission

Zheng Feng

Journal of Semiconductors, 2019, 40(7): 070201. doi: 10.1088/1674-4926/40/7/070201

6

Preface to the Special Issue on Challenges and Possibilities of Magnetic Semiconductors

Xinyu Liu, Dahai Wei, Jianhua Zhao

Journal of Semiconductors, 2019, 40(8): 080101. doi: 10.1088/1674-4926/40/8/080101

7

Quantum light source devices of In(Ga)As semiconductor self-assembled quantum dots

Xiaowu He, Yifeng Song, Ying Yu, Ben Ma, Zesheng Chen, et al.

Journal of Semiconductors, 2019, 40(7): 071902. doi: 10.1088/1674-4926/40/7/071902

8

Preface to the Special Topic on Devices and Circuits for Wearable and IoT Systems

Zhihua Wang, Yong Hei, Zhangming Zhu

Journal of Semiconductors, 2017, 38(10): 101001. doi: 10.1088/1674-4926/38/10/101001

9

Vertical-dual-source tunnel FETs with steeper subthreshold swing

Zhi Jiang, Yiqi Zhuang, Cong Li, Ping Wang, Yuqi Liu, et al.

Journal of Semiconductors, 2016, 37(9): 094003. doi: 10.1088/1674-4926/37/9/094003

10

Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling

Ken K. Chin, Zimeng Cheng

Journal of Semiconductors, 2016, 37(9): 092003. doi: 10.1088/1674-4926/37/9/092003

11

First-principles calculations of Mg2X (X = Si, Ge, Sn) semiconductors with the calcium fluorite structure

Sandong Guo

Journal of Semiconductors, 2015, 36(5): 053002. doi: 10.1088/1674-4926/36/5/053002

12

Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies

Aritra Acharyya, Aliva Mallik, Debopriya Banerjee, Suman Ganguli, Arindam Das, et al.

Journal of Semiconductors, 2014, 35(8): 084003. doi: 10.1088/1674-4926/35/8/084003

13

The effects of electron irradiation on the optical properties of the organic semiconductor polypyrrole

J. V. Thombare, M. C. Rath, S. H. Han, V. J. Fulari

Journal of Semiconductors, 2013, 34(9): 093001. doi: 10.1088/1674-4926/34/9/093001

14

A theoretical model of the femtosecond laser ablation of semiconductors considering inverse bremsstrahlung absorption

Lin Xiaohui, Zhang Chibin, Ren Weisong, Jiang Shuyun, Ouyang Quanhui, et al.

Journal of Semiconductors, 2012, 33(4): 046002. doi: 10.1088/1674-4926/33/4/046002

15

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, et al.

Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002

16

Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure

Liu Xiang, Wei Fuxiang, Liu Hui

Journal of Semiconductors, 2009, 30(4): 044007. doi: 10.1088/1674-4926/30/4/044007

17

Sensitive properties of In-based compound semiconductor oxide to Cl2 gas

Zhao Wenjie, Shi Yunbo, Xiu Debin, Lei Tingping, Feng Qiaohua, et al.

Journal of Semiconductors, 2009, 30(3): 034010. doi: 10.1088/1674-4926/30/3/034010

18

Electronic Structure of Semiconductor Nanocrystals

Li Jingbo, Wang Linwang, Wei Suhuai

Chinese Journal of Semiconductors , 2006, 27(2): 191-196.

19

Terahertz Semiconductor Quantum Well Devices

Liu H C, Luo H, Ban D, Wachter M, Song C Y, et al.

Chinese Journal of Semiconductors , 2006, 27(4): 627-634.

20

Temperature Dependence of Vacuum Rabi Splitting in a Single Quantum Dot-Semiconductor Microcavity

Zhu Kadi, Li Waisang

Chinese Journal of Semiconductors , 2006, 27(3): 489-493.

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    Xiulai Xu, Jinshi Xu. Preface to the Special Issue on Quantum Light Source from Semiconductors[J]. Journal of Semiconductors, 2019, 40(7): 070101. doi: 10.1088/1674-4926/40/7/070101
    X L XU, J S XU, Preface to the Special Issue on Quantum Light Source from Semiconductors[J]. J. Semicond., 2019, 40(7): 070101. doi: 10.1088/1674-4926/40/7/070101.
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    Received: Revised: Online: Accepted Manuscript: 27 June 2019Uncorrected proof: 02 July 2019Published: 05 July 2019

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      Xiulai Xu, Jinshi Xu. Preface to the Special Issue on Quantum Light Source from Semiconductors[J]. Journal of Semiconductors, 2019, 40(7): 070101. doi: 10.1088/1674-4926/40/7/070101 ****X L XU, J S XU, Preface to the Special Issue on Quantum Light Source from Semiconductors[J]. J. Semicond., 2019, 40(7): 070101. doi: 10.1088/1674-4926/40/7/070101.
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      Xiulai Xu, Jinshi Xu. Preface to the Special Issue on Quantum Light Source from Semiconductors[J]. Journal of Semiconductors, 2019, 40(7): 070101. doi: 10.1088/1674-4926/40/7/070101 ****
      X L XU, J S XU, Preface to the Special Issue on Quantum Light Source from Semiconductors[J]. J. Semicond., 2019, 40(7): 070101. doi: 10.1088/1674-4926/40/7/070101.

      Preface to the Special Issue on Quantum Light Source from Semiconductors

      DOI: 10.1088/1674-4926/40/7/070101
      • Published Date: 2019-07-01

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